BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 306D 1200V 23A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4222-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 23 TC = 90 °C 15 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 46 TC = 90 °C 30 IF Diode forward current TC = 90 °C 18 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 108 Ptot Power dissipation TC = 25 °C W 165 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C Jul-30-1996 BUP 306D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC 0.63 Diode thermal resistance, chip case RthJCD 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.7 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 10 A, Tj = 25 °C - 2.8 3.3 VGE = 15 V, IC = 10 A, Tj = 125 °C - 3.8 4.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.4 IGES VGE = 20 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 10 A Input capacitance 3.5 pF - 1300 1750 - 100 150 - 50 75 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 5.5 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-30-1996 BUP 306D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Ω Rise time - 40 60 - 30 50 - 200 300 - 20 30 tr VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Ω - 1.3 - Free-Wheel Diode Diode forward voltage VF V IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.4 2.9 IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.9 - Reverse recovery time trr ns IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - - - Tj = 125 °C - 100 150 Reverse recovery charge Qrr µC IF = 15 A, VR = 0 V, diF/dt = -800 A/µs IF = 15 A, VGE = 0 V, Tj = 25 °C - 1 1.8 VR = 0 V, diF/dt = -800 A/µs, Tj = 125 °C - 3 5.4 Semiconductor Group 3 Jul-30-1996 BUP 306D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 170 24 W A 20 140 IC 18 120 16 100 14 12 80 10 60 8 6 40 4 20 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 IGBT 10 0 tp = 13.0µs A K/W IC ZthJC 10 1 10 -1 100 µs D = 0.50 0.20 1 ms 10 0 10 -2 0.10 0.05 0.02 single pulse 10 ms 0.01 10 -1 0 10 DC 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-30-1996 BUP 306D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 125 °C parameter: Tj = 25 °C Semiconductor Group 5 Jul-30-1996 BUP 306D Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 10 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 400 V 800 V 14 12 10 8 6 4 2 0 0 20 40 60 80 100 nC 130 QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 6 0 200 400 600 800 1000 1200 V 1600 Jul-30-1996 BUP 306D Typ. switching time t = f (RG), inductive load, Tj = 125 °C parameter: VCE = 600 V, VGE = ± 15 V, IC = 10 A Typ. forward characteristics Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 30 A K/W 26 IF ZthJC 24 10 0 22 20 18 Tj=125°C 16 Tj=25°C 10 -1 14 D = 0.50 12 0.20 0.10 10 0.05 10 -2 8 0.02 6 0.01 4 2 0 0.0 single pulse 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 7 Jul-30-1996 BUP 306D Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-30-1996