BSM 75 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 22 Ohm Type VCE BSM 75 GB 170 DN2 1700V 110A IC Package Ordering Code HALF-BRIDGE 1 C67070-A2702-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 110 TC = 80 °C 75 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 220 TC = 80 °C 150 Power dissipation per IGBT W Ptot TC = 25 °C 625 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.2 Diode thermal resistance, chip case RthJCD ≤ 0.63 Insulation test voltage, t = 1min. Vis Creepage distance °C -40 ... + 125 K/W 4000 Vac - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-27-1997 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 5 mA 4.8 5.5 6.2 VGE = 15 V, IC = 75 A, Tj = 25 °C - 3.4 3.9 VGE = 15 V, IC = 75 A, Tj = 125 °C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1700 V, VGE = 0 V, Tj = 25 °C - 0.5 0.75 VCE = 1700 V, VGE = 0 V, Tj = 125 °C - 2 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 75 A Input capacitance 27 nF - 11 - - 1 - - 0.28 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-27-1997 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22 Ω Rise time - 400 800 - 150 300 - 650 1000 - 90 140 tr VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22 Ω Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22 Ω Fall time tf VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22 Ω Free-Wheel Diode Diode forward voltage V VF IF = 75 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 75 A, VGE = 0 V, Tj = 125 °C - 2.1 - Reverse recovery time µs trr IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.3 µC Qrr IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 7 - Tj = 125 °C - 21 - 3 Oct-27-1997 BSM 75 GB 170 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 650 W A t = 800.0ns p 1 µs 550 Ptot IC 500 10 2 450 10 µs 400 100 µs 350 10 1 300 1 ms 250 200 10 ms 10 0 150 100 DC 50 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 120 A K/W 100 IC ZthJC 90 10 -1 80 70 60 D = 0.50 50 0.20 10 40 -2 0.10 0.05 30 0.02 20 10 0 0 0.01 single pulse 20 40 60 80 100 120 °C 160 TC 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-27-1997 BSM 75 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 150 150 A A 130 IC 120 110 100 130 17V 15V 13V 11V 9V 7V IC 120 110 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 0 10 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 300 A 260 IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM 75 GB 170 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 75 A Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 14 800 V 1200 V 10 1 Ciss 12 10 8 10 0 Coss 6 4 Crss 2 0 0.0 0.2 0.4 0.6 0.8 µC 10 -1 0 1.1 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 50 nH ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tp ≤ 10 µs, L < 50 nH 2.5 12 ICpulsIC ICsc/IC 1.5 di/dt = 700A/µs 1500A/µs 2600A/µs 8 di/dt = 700A/µs 1500A/µs 2600A/µs 6 1.0 4 ° allowed numbers of short circuit: <1000 ° time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 1400 V 1800 VCE 6 0 0 200 400 600 800 1000 1200 1400 V 1800 VCE Oct-27-1997 BSM 75 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 75 A 10 4 10 4 ns ns t t tdoff 10 3 10 3 tdoff tdon tdon tr tr 10 2 10 2 tf tf 10 1 0 20 40 60 80 100 120 140 A 10 1 0 180 20 40 60 80 Ω IC 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 75 A 200 200 mWs mWs Eon E 160 E 140 140 120 120 100 100 80 80 60 60 40 40 Eoff 20 0 0 Eon 160 Eoff 20 20 40 60 80 100 120 140 A 180 IC 7 0 0 20 40 60 80 Ω 120 RG Oct-27-1997 BSM 75 GB 170 DN2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 150 A 130 IF Diode Tj=125°C 120 K/W Tj=25°C ZthJC 110 10 -1 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 10 -3 40 0.05 single pulse 0.02 30 0.01 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM 75 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g 9 Oct-27-1997