Infineon BUP 212 IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 212 1200V 22A Pin 3 C E Package Ordering Code TO-220 AB Q67040-A . . . . . Q67040-A4408 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Emitter-collector voltage VEC Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 22 TC = 110 °C 8 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 44 TC = 110 °C 16 EAS Avalanche energy, single pulse mJ IC = 8 A, VCC = 50 V, RGE = 25 Ω L = 300 µH, Tj = 25 °C 10 Ptot Power dissipation TC = 25 °C W 125 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C May-05-1997 Infineon BUP 212 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance ≤1 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.3 mA, Tj = 25 °C V 4.5 5.5 6.5 VGE = 15 V, IC = 8 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 8 A, Tj = 125 °C - 3.1 3.7 VGE = 15 V, IC = 16 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 16 A, Tj = 125 °C - 4.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.4 IGES VGE = 25 V, VCE = 0 V nA - - 120 AC Characteristics Transconductance gfs VCE = 20 V, IC = 8 A Input capacitance 4 pF - 600 800 - 60 90 - 38 55 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 5 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 May-05-1997 Infineon BUP 212 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Rise time - 55 110 - 50 100 - 380 570 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Semiconductor Group 3 May-05-1997 BUP 212 Infineon Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 130 26 W A 110 Ptot 22 IC 100 20 90 18 80 16 70 14 60 12 50 10 40 8 30 6 20 4 10 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 1 10 2 tp = 13.0µs K/W A IC ZthJC 10 0 10 1 100 µs 10 -1 D = 0.50 0.20 10 0 0.10 1 ms 0.05 10 -2 0.02 0.01 single pulse 10 ms 10 -1 10 0 10 1 10 2 DC 3 10 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 May-05-1997 BUP 212 Infineon Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 20 20 A IC 16 14 A 17V 15V 13V 11V 9V 7V IC 16 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 25 A 22 IC 20 18 16 14 12 10 8 6 4 2 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 May-05-1997 BUP 212 Infineon Typ. switching time Typ. switching time t = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, IC =8 A par.:VCE=600V, VGE = ±15V, RG =153Ω 10 3 10 3 t tdoff t tdoff ns tr 10 2 ns tf tdon tr 10 2 tf tdon 10 1 0 4 8 12 16 20 24 A IC 10 1 0 30 50 100 150 200 250 300 350 400 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, IC =8 A par.:VCE=600V, VGE = ±15V, RG =153Ω E 10 10 mWs mWs 8 Ω 500 RG E 8 7 7 6 6 5 5 Eon 4 4 3 3 Eon 2 2 Eoff 1 0 0 1 4 8 12 16 20 24 A 0 0 30 IC Semiconductor Group Eon 50 100 150 200 250 300 350 400 Ω 500 RG 6 May-05-1997 BUP 212 Infineon Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A C = f (VCE) 10 4 20 V pF VGE 16 C 600 V 14 800 V 10 3 12 Ciss 10 8 10 2 6 Coss 4 Crss 2 0 0 10 20 30 40 50 60 70 80 nC 100 10 1 0 5 10 15 20 25 30 V 40 VCE QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 7 0 200 400 600 800 1000 1200 V 1600 VCE May-05-1997