Preliminary data BSO 307 N SIPMOS Small-Signal-Transistor Product Summary Features • Dual N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode • Avalanche rated 30 V 0.05 Ω 5 A • Logic Level • dv/dt rated Type Package Ordering Code BSO 307 N SO 8 Q67000-S4012 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current, one channel active ID 5 IDpulse 20 EAS 55 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 5 A EAR 0.2 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W °C Value Unit A T A = 25 °C Pulsed drain current, one channel active T A = 25 °C Avalanche energy, single pulse I D = 5 A, VDD = 25 V, R GS = 25 Ω mJ kV/µs I S = 5 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Operating temperature Tj -55...+150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Semiconductor Group 55/150/56 1 01 / 1999 Preliminary data BSO 307 N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 35 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 100 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS I D = 20 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA, T j = 25 °C µA VDS = 30 V, V GS = 0 V, T j = 25 °C - 0.1 1 VDS = 30 V, V GS = 0 V, T j = 150 °C - 10 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 4.1 A - 0.05 0.075 VGS = 10 V, I D = 5 A - 0.035 0.05 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 01 / 1999 Preliminary data BSO 307 N Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 2 6 - S Ciss - 400 500 pF Coss - 160 200 Crss - 70 90 td(on) - 22 33 ns tr - 22 33 ns td(off) - 22 33 ns tf - 25 38 ns Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 4.1 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Rise time VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Fall time VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Semiconductor Group 3 01 / 1999 Preliminary data BSO 307 N Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. QG(th) - 0.4 0.6 Gate charge at Vgs=5V VDD = 15 V, ID = 4.1 A, VGS = 0 to 5 V Qg(5) - 8 12 Gate charge total Qg - 13 20 V(plateau) - 3.2 - V IS - - 5 A I SM - - 20 VSD - 0.85 1.4 V t rr - 25 38 ns Q rr - 20 30 µC at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 15 V, ID = 0.1 A, VGS = 0 to 1 V nC VDD = 15 V, ID = 4.1 A, VGS = 0 to 10 V Gate plateau voltage VDD = 15 V, ID = 4.1 A Reverse Diode Inverse diode continuous forward current TA = 25 °C Inverse diode direct current,pulsed TA = 25 °C Inverse diode forward voltage VGS = 0 V, I F = 10 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Semiconductor Group 4 01 / 1999 Preliminary data BSO 307 N Power dissipation Drain current Ptot= f (TA) ID = f (TA ) BSO 307 N 2.4 5.5 W A 2.0 4.5 1.8 4.0 1.6 3.5 ID Ptot BSO 307 N 1.4 3.0 1.2 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0.0 0 20 40 60 80 100 °C 120 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f(tp ) parameter : D = 0 , TA = 25 °C parameter : D= tp/T 10 2 BSO 307 N 10 2 /I D A = 10 1 R D S( on VD BSO 307 N K/W tp = 6.0µs S 160 10 µs ) Z thJA ID 100 µs 1 ms 10 0 10 1 10 ms D = 0.50 0.20 10 0 0.10 single pulse 10 -1 0.02 DC 10 -2 -1 10 10 0 10 1 0.01 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Semiconductor Group 0.05 s 10 4 tp 5 01 / 1999 Preliminary data BSO 307 N Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 4.1 A, VGS = 4.5 V BSO 307 N A BSO 307 N Ptot = 2W 0.18 l kf ge d ijh Ω VGS [V] a 2.5 10 9 ID 8 7 c 6 5 4 3 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 0.14 RDS(on) 12 0.10 98% 0.08 typ 0.06 0.04 b 2 0.12 0.02 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 -60 5.0 VDS -20 20 60 100 °C 180 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 Ciss pF C Coss 10 2 Crss 10 1 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 6 01 / 1999 Preliminary data BSO 307 N Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA 12 3.2 A V 10 2.4 VGS(th) 9 ID 8 7 6 2.0 1.6 5 1.2 max 0.8 typ 0.4 min 4 3 2 1 0 1.8 2.0 2.2 2.5 2.8 3.0 3.2 3.5 V 0.0 -60 4.0 -20 20 60 100 V 160 Tj VGS Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 307 N A IF 10 1 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 01 / 1999 Preliminary data BSO 307 N Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 5 A, VDD = 25 V VGS = f (Q Gate) RGS = 25 Ω parameter: ID puls = 4.1 A BSO 307 N 60 16 V mJ 40 VGS EAS 12 30 10 8 0,2 VDS max 6 0,8 VDS max 20 4 10 2 0 20 40 60 80 100 120 Drain-source breakdown voltage °C 0 0 160 Tj 2 4 6 8 10 12 14 16 nC 19 Q Gate V(BR)DSS = f (Tj) BSO 307 N 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 0 20 40 60 80 100 120 °C 160 Tj Semiconductor Group 8 01 / 1999 Preliminary data BSO 307 N Edition 01 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group 9 01 / 1999