ACT108W-600E AC Thyristor power switch Rev. 04 — 9 December 2009 Product data sheet 1. Product profile 1.1 General description AC Thyristor power switch in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients 1.2 Features and benefits Common terminal on mounting base allows multiple ACTs on shared cooling pad Safe clamping of low energy over-voltage transients Exclusive negative gate triggering Self-protective turn-on during high energy voltage transients Full cycle AC conduction Surface-mountable package Remote gate separates the gate driver from the effects of the load current Very high noise immunity 1.3 Applications Contactors, circuit breakers, valves, dispensers and door locks Lower-power highly inductive, resistive and safety loads Fan motor circuits Pump motor circuits 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDRM repetitive peak off-state voltage IGT gate trigger current Conditions Min Typ Max Unit - - 600 V VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; see Figure 10 1 - 10 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C 1 - 10 mA IT(RMS) RMS on-state current full sine wave; Tsp ≤ 112 °C; see Figure 3, 1 and 2 - - 0.8 A dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; gate open circuit; see Figure 14 1000 - - V/µs ACT108W-600E NXP Semiconductors AC Thyristor power switch Table 1. Quick reference …continued Symbol Parameter Conditions Min Typ Max Unit VCL clamping voltage ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 17 650 - - V VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; see Figure 6 - - 2 kV VT on-state voltage IT = 1.1 A;see Figure 13 - - 1.3 V 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 LD load 2 CM common 3 G gate 4 CM common Simplified outline Graphic symbol LD 4 G 1 2 3 CM 001aaj924 SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number ACT108W-600E Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 2 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM Conditions Min Max Unit - 600 V full sine wave; Tsp ≤ 112 °C; see Figure 3, 1 and 2 - 0.8 A non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.8 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4 and 5 - 8 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 0.32 A2s dIT/dt rate of rise of on-state current IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current t = 20 μs - 1 A VGM peak gate voltage positive applied gate voltage - 15 V PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C VPP peak pulse voltage - 2 kV Tj = 25 °C; non-repetitive, off-state; see Figure 6 003aac822 8 IT(RMS) (A) 003aac807 1 IT(RMS) (A) 0.8 6 0.6 4 0.4 2 0.2 0 10−2 Fig 1. 10−1 0 −50 1 10 surge duration (s) RMS on-state current as a function of surge duration; maximum values Fig 2. 50 100 T sp (°C) 150 RMS on-state current as a function of solder point temperature; maximum values ACT108W-600E_4 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 3 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 003aac803 1.0 Ptot (W) = 180° 0.8 0.6 0.4 0.2 0 0 Fig 3. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS) (A) Total power dissipation as a function of RMS on-state current; maximum values 003aac804 10 ITSM (A) 8 6 4 ITSM IT t 2 1/f Tj(init) = 25 °C max 0 1 Fig 4. 102 10 number of cycles 103 Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 4 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 003aac805 103 ITSM IT ITSM (A) t tp 102 Tj(init) = 25 °C max 10 1 10−5 Fig 5. 10−4 10−3 10−2 tp (s) Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator Open Circuit Voltage 1.2 μs/50 μs waveform RGen 2 R 150 Surge pulse L 5 μH Load Model RG DUT 220 003aad077 Fig 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 5 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-sp) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from full cycle with heatsink compound; junction to solder point see Figure 9 - - 15 K/W thermal resistance from full cycle; printed-circuit board mounted for junction to ambient pad area; see Figure 7 - 70 - K/W full cycle; printed-circuit board mounted for minimum footprint; see Figure 8 - 156 - K/W 36 3.8 min 18 60 9 1.5 min 4.5 4.6 6.3 10 1.5 min (3×) 2.3 1.5 min 7 4.6 15 001aab508 50 001aab509 Fig 7. Printed-circuit board pad area SOT223 Fig 8. Minimum footprint SOT223 ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 6 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 003aac808 102 Zth(j-sp) (K/W) 10 1 P 10−1 t tp 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 9. Transient thermal impedance from junction to solder point as a function of pulse width 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; see Figure 10 1 - 10 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C 1 - 10 mA IL latching current VD = 12 V; IG = 12 mA; Tj = 25 °C; see Figure 11 - - 30 mA IH holding current VD = 12 V; Tj = 25 °C; see Figure 12 - 9 25 mA VT on-state voltage IT = 1.1 A; see Figure 13 - - 1.3 V VGT gate trigger voltage VD = 600 V; IT = 100 mA; Tj ≤ 125 °C 0.15 - - V VD = 600 V; IT = 100 mA; Tj = 25 °C - - 1 V ID off-state current VD = 600 V; Tj ≤ 125 °C - - 0.2 mA VD = 600 V; Tj ≤ 25 °C - - 2 µA dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; gate open circuit; see Figure 14 1000 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 15 V/µs; gate open circuit; see Figure 15 and 16 0.3 - - A/ms VCL clamping voltage ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 17 650 - - V ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 7 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 003aac809 3 IGT IL IL(25°C) (1) IGT(25°C) 2 003aac811 3 2 (2) 1 1 (2) 0 −50 (1) 0 50 100 Tj (°C) Fig 10. Normalized gate trigger current as a function of junction temperature 003aac810 3 0 −50 150 0 50 100 150 Tj (°C) Fig 11. Normalized latching current as a function of junction temperature 003aac812 2.0 IT (A) IH IH(25°C) 1.5 2 1.0 (1) 1 (2) (3) 0.5 0 −50 0 50 100 150 0.0 0.0 Tj (°C) Fig 12. Normalized holding current as a function of junction temperature 1.0 1.5 VT (V) 2.0 Fig 13. On-state current as a function of on-state voltage ACT108W-600E_4 Product data sheet 0.5 © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 8 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 003aac813 12 A B 003aac814 12 A B 10 8 8 6 4 4 2 0 0 25 50 75 100 125 25 50 75 100 Tj (°C) Fig 14. Normalized rate of rise of off-state voltage as a function of junction temperature 003aac815 2.0 125 Tj (°C) Fig 15. Normalized critical rate of rise of commutating current as a function of junction temperature 003aac817 1.2 A [B] VCL VCL(25°C) A [spec] 1.5 0.8 1.0 0.4 0.5 0 10−1 1 102 10 0 −50 B (V/μs) 50 100 150 Tj (°C) Fig 16. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values Fig 17. Normalized clamping voltage (upper limit) as a function of junction temperature; minimum values ACT108W-600E_4 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 9 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 7. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig 18. Package outline SOT223 (SC-73) ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 10 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes ACT108W-600E_4 20091209 Product data sheet - ACT108W-600E_3 Modifications: • Various changes to content. ACT108W-600E_3 20091021 Product data sheet - ACT108W-600E_2 ACT108W-600E_2 20090526 Product data sheet - ACT108W-600E_1 ACT108W-600E_1 20090429 Product data sheet - - ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 11 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 9.2 Definitions Draft— The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet— A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General— Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes— NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use— NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications— Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data— The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values— Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale— NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license— Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control— This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— is a trademark of NXP B.V. 10. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] ACT108W-600E_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 9 December 2009 12 of 13 ACT108W-600E NXP Semiconductors AC Thyristor power switch 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 December 2009 Document identifier: ACT108W-600E_4