IRF IRFZ44VSPBF

PD - 95561
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
IRFZ44VSPbF
IRFZ44VLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 16.5mΩ
G
ID = 55A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
D2Pak
IRFZ44VS
TO-262
IRFZ44VL
The through-hole version (IRFZ44VL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
55
39
220
115
0.77
± 20
115
55
11
4.5
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.3
40
°C/W
1
07/15/04
IRFZ44VS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
60
–––
–––
2.0
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.062
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
97
40
57
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1812
393
103
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
16.5 mΩ VGS = 10V, ID = 31A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 31A„
25
VDS = 60V, VGS = 0V
µA
250
VDS = 48V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
67
ID = 51A
18
nC
VDS = 48V
25
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 30V
–––
ID = 51A
ns
–––
RG = 9.1Ω
–––
RD = 0.6Ω, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
55
––– –––
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 2.5
V
TJ = 25°C, IS = 51A, VGS = 0V „
––– 70 105
ns
TJ = 25°C, IF = 51A
––– 146 219
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 89µH
ƒ ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 51A. (See Figure 12)
2
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IRFZ44VS/LPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
100
10
4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS= 25V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
4.5V
10
12
3.0
ID = 55A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFZ44VS/LPbF
20
VGS = 0V,
f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
4000
Crss = Cgd
Coss = Cds + Cgd
3000
2000
Ciss
1000
Coss
ID = 51A
V DS= 48V
V DS= 30V
V DS= 12V
16
12
8
4
Crss
0
0
1
10
100
0
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
80
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
TJ = 175 ° C
100
10us
100
TJ = 25 ° C
10
100us
10
1ms
1
0.1
0.2
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
VGS = 0 V
0.7
1.2
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
2.2
1
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ44VS/LPbF
VGS
50
ID , Drain Current (A)
RD
V DS
60
D.U.T.
RG
+
V
DD
-
40
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
DRIVER
D.U.T
RG
+
- VDD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ44VS/LPbF
250
ID
21A
36A
BOTTOM 51A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ44VS/LPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ44VS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WIT H
LOT CODE 8024
AS SE MB LED ON WW 02, 2000
IN T HE AS S EMB LY LINE "L"
INT E RNAT IONAL
RE CT IF IER
LOGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
PART NUMB ER
F 530S
AS SE MBLY
LOT CODE
DAT E CODE
YEAR 0 = 2000
WE EK 02
LINE L
OR
INTE RNATIONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
8
PART NU MBER
F 530S
DATE CODE
P = DES IGNAT ES LE AD-FRE E
PRODUCT (OPT IONAL)
YE AR 0 = 2000
WE EK 02
A = AS S E MBLY S IT E CODE
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IRFZ44VS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECT IF IER
LOGO
AS S EMBLY
L OT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRFZ44VS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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