IRF IRG4BC30SS

PD - 94069
IRG4BC30S-S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
VCES = 600V
VCE(on) typ. = 1.4V
G
@VGE = 15V, IC = 18A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
D2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
600
34
18
68
68
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
RθJC
RθCS
RθJA
Wt
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Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
–––
0.50
–––
1.44
1.2
–––
40
–––
Units
°C/W
g (oz)
1
12/28/00
IRG4BC30S-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)CES/∆TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
VCE(ON)
Collector-to-Emitter Saturation Voltage
V(BR)CES
V(BR)ECS
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance …
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.0
—
—
—
—
Typ. Max. Units
Conditions
—
—
V
VGE = 0V, IC = 250µA
—
—
V
VGE = 0V, IC = 1.0A
0.75 —
V/°C VGE = 0V, IC = 1.0mA
1.40 1.6
IC = 18A
VGE = 15V
1.84 —
IC = 34A
See Fig. 2, 5
V
1.45 —
IC = 18A , TJ = 150°C
—
6.0
VCE = VGE, IC = 250µA
-11
— mV/°C VCE = VGE, IC = 250µA
11
—
S
VCE = 100V, IC = 18A
—
250
VGE = 0V, VCE = 600V
µA
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Q ge
Qgc
td(on)
tr
td(off)
tf
E on
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
50
75
IC = 18A
7.3
11
nC
VCC = 400V
See Fig. 8
17
26
VGE = 15V
22
—
18
—
TJ = 25°C
ns
540 810
IC = 18A, VCC = 480V
390 590
VGE = 15V, RG = 23Ω
0.26 —
Energy losses include "tail"
3.45 —
mJ See Fig. 9, 10, 14
3.71 5.6
21
—
TJ = 150°C,
19
—
IC = 18A, VCC = 480V
ns
790
—
VGE = 15V, RG = 23Ω
760
—
Energy losses include "tail"
6.55 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
1100 —
VGE = 0V
72
—
pF
VCC = 30V
See Fig. 7
13
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature (See fig. 13b).
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a).
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC30S-S
50
F or both:
40
Load Current ( A )
Triang ula r w a ve :
D uty c yc le: 50%
T J = 125°C
T s ink = 90°C
G ate drive as s pecified
I
Cla m p vo ltag e:
80 % of rate d
P ow e r D is sip atio n = 21 W
30
S q u a re w a v e :
6 0% of rate d
volta ge
20
I
10
Id e a l d io d e s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
TJ = 25 o C
TJ = 150 o C
10
V GE = 15V
20µs PULSE WIDTH
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
TJ = 150 o C
10
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
0.1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC30S-S
35
VCE , Collector-to-Emitter Voltage(V)
3.0
Maximum DC Collector Current(A)
30
25
20
15
10
5
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
I C = 36 A
2.5
2.0
I C = 18 A
1.5
I C = 9.09AA
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30S-S
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
1500
Cies
1000
500
Coes
VCC = 400V
I C = 18A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
V CC = 480V
V GE = 15V
TJ = 25 ° C
3.76 I C = 18A
3.72
3.68
3.64
3.60
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
10
20
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
10
50
RG = 23Ohm
Ω
VGE = 15V
VCC = 480V
IC = 36 A
10
IC = 18 A
A
IC = 9.0
9A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC30S-S
Total Switching Losses (mJ)
RG
TJ
VCC
12.0 VGE
1000
= 23Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
15.0
VGE = 20V
T J = 125 oC
100
9.0
6.0
3.0
10
SAFE OPERATING AREA
1
0.0
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
50
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC30S-S
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X IC@25°C
480µF
960V

‚
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
ƒ

‚
90 %
10 %
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4BC30S-S
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRG4BC30S-S
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.1 0 (.1 6 1 )
3.9 0 (.1 5 3 )
F E ED D IR E C TIO N 1 .8 5 (.0 73 )
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.6 0 (.45 7)
1 1.4 0 (.44 9)
1 .6 5 (.0 65 )
0.3 68 (.01 45 )
0.3 42 (.01 35 )
15.4 2 (.60 9)
15.2 2 (.60 1)
2 4.30 (.9 5 7)
2 3.90 (.9 4 1)
TR L
1 0.90 (.42 9)
1 0.70 (.42 1)
1.75 (.06 9)
1.25 (.04 9)
4.72 (.1 3 6)
4.52 (.1 7 8)
16 .10 (.63 4)
15 .90 (.62 6)
F E E D D IR E C TIO N
13.50 (.532)
12.80 (.504)
2 7.40 (1.079)
2 3.90 (.941)
4
330 .00
(14.173)
M AX .
60.00 (2.3 62)
MIN .
NO T ES :
1. C OM F OR MS TO EIA-418.
2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER .
3. D IME NSIO N M EAS URE D @ HUB .
4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E.
26 .40 (1.039)
24 .40 (.961)
30.40 (1.197)
M AX.
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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9