ETC IRG4BAC50S

PD - 93771
PROVISIONAL
IRG4BAC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry Super-220™ (TO-273AA) package
VCES = 600V
VCE(on) typ. = 1.28V
G
@VGE = 15V, IC = 41A
E
N-channel
Benefits
• Generation 4 IGBT offers highest efficiency
• Optimized for specific application conditions
Super-220™
(TO-273AA)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
70
41
140
140
± 20
20
200
78
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.50
–––
TBD
0.64
–––
40
–––
Units
°C/W
g (oz)
1
1/19/2000
IRG4BAC50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage „ 18
—
Temperature Coeff. of Breakdown Voltage — 0.75
— 1.28
Collector-to-Emitter Saturation Voltage
— 1.62
— 1.28
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-9.3
Forward Transconductance …
17
34
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
1.36
IC = 41A
—
IC = 80A
See Fig.2, 5
V
—
IC = 41A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 41A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LC
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
180
24
61
33
30
650
400
0.72
8.27
8.99
31
31
1080
620
15
2.0
5.0
4100
250
48
Max. Units
Conditions
280
IC = 41A
37
nC
VCC = 400V
See Fig. 8
92
VGE = 15V
—
—
TJ = 25°C
ns
980
IC = 41A, VCC = 480V
600
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
13
—
TJ = 150°C,
—
IC = 41A, VCC = 480V
ns
—
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 11, 14
—
nH
Measured 5mm from package
—
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BAC50S
100
F o r b o th :
T ria n g u la r wa v e :
D uty cy c le: 50%
T J = 125° C
T s ink = 90°C
Ga te drive as s pec ified
80
I
Load Current ( A )
P o w e r D i ss i p a tio n = 4 0 W
C la m p v o lta g e :
8 0 % o f ra te d
60
S q u are wa ve:
6 0 % o f ra te d
vo lt a g e
40
I
20
Id e a l di o de s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
1000
100
100
10
TJ = 150 o C
TJ = 25 o C
V GE = 15V
20µs PULSE WIDTH
1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 o C
10
TJ = 25 oC
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BAC50S
L IM IT E D B Y P A C K A G E
2.2
V G E = 1 5V
VCE , Collector-to-Emitter Voltage(V)
Maxim um D C Collector C urrent (A )
80
60
40
20
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
2.0
I C = 82 A
1.8
1.6
1.4
I C = 41 A
1.2
I C =20.5 A
1.0
0.8
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
T C , C ase Tem perature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BAC50S
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
8000
6000
Cies
4000
2000
Coes
VCC = 400V
I C = 41A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
9.5
9.0
8.5
10
20
30
40
RRGG , Gate
Gate Resistance
Resistance(Ω)
(Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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120
160
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 41A
0
80
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10.0
40
50
5.0Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 82 A
IC = 41 A
10
IC = 20.5 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BAC50S
RG
TJ
VCC
VGE
1000
5.0Ω
= Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
40
30
VGE = 20V
T J = 125 oC
100
20
10
10
SAFE OPERATING AREA
1
0
0
20
40
60
80
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
100
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BAC50S
L
D .U .T.
VC *
50V
RL =
0 - 480V
10 0 0V
480V
4 X I C@25°C
480µF
960V

‚
* Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax )
* Note: Due to the 5 0V pow e r supply, puls e w idth and inductor
w ill incre as e to obta in rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
ƒ
Fig. 14b - Switching Loss
Waveforms
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7
IRG4BAC50S
Super-220™ (TO-273AA) Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
8
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