INTEGRATED CIRCUITS DATA SHEET 74AHC1G04; 74AHCT1G04 Inverter Product specification Supersedes data of 2002 May 27 2003 Sep 04 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 FEATURES DESCRIPTION • Symmetrical output impedance The 74AHC1G04/74AHCT1G04 are high-speed Si-gate CMOS devices. • High noise immunity • ESD protection: The 74AHC1G04/74AHCT1G04 provides the inverting buffer. – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • Balanced propagation delays • Very small 5-pin package • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. TYPICAL SYMBOL PARAMETER CONDITIONS UNIT 74AHC1G04 74AHCT1G04 tPHL/tPLH propagation delay input A to output Y CL = 15 pF; VCC = 5 V 3.1 3.4 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance 15 16 pF CL = 50 pF; f = 1 MHz; notes 1 and 2 Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. 2003 Sep 04 2 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 FUNCTION TABLE See note 1. INPUT OUTPUT A Y L H H L Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING AND PACKAGE INFORMATION PACKAGES TYPE NUMBER TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE MARKING 74AHC1G04GW −40 to +125 °C 5 SC-88A plastic SOT353 AC 74AHCT1G04GW −40 to +125 °C 5 SC-88A plastic SOT353 CC 74AHC1G04GV −40 to +125 °C 5 SC-74A plastic SOT753 A04 74AHCT1G04GV −40 to +125 °C 5 SC-74A plastic SOT753 C04 PINNING PIN SYMBOL DESCRIPTION 1 n.c. not connected 2 A data input A 3 GND ground (0 V) 4 Y data output Y 5 VCC supply voltage handbook, halfpage n.c. 1 5 VCC handbook, halfpage A 2 GND 2 04 3 4 A Y 4 Y MNA108 MNA107 Fig.1 Pin configuration. 2003 Sep 04 Fig.2 Logic symbol. 3 Philips Semiconductors Product specification Inverter handbook, halfpage 74AHC1G04; 74AHCT1G04 1 2 4 handbook, halfpage Y A MNA110 MNA109 Fig.3 IEC logic symbol. Fig.4 Logic diagram. RECOMMENDED OPERATING CONDITIONS 74AHC1G04 SYMBOL PARAMETER 74AHCT1G04 CONDITIONS UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 − 5.5 0 − 5.5 V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC −40 characteristics per device +25 +125 −40 +25 +125 °C tr, tf (∆t/∆f) input rise and fall times VCC = 3.3 ±0.3 V − − 100 − − − ns/V VCC = 5 ±0.5 V − − 20 − − 20 ns/V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V VI input voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V − −20 mA IOK output diode current VO < −0.5 or VO > VCC + 0.5 V; note 1 − ±20 mA IO output source or sink current −0.5 V < VO < VCC + 0.5 V − ±25 mA ICC, IGND VCC or GND current − ±75 mA Tstg storage temperature PD power dissipation Tamb = −40 to +125 °C −65 +150 °C − 250 mW Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2003 Sep 04 4 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 DC CHARACTERISTICS Type 74AHC1G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER MIN. OTHER TYP. MAX. UNIT VCC (V) Tamb = 25 °C VIH VIL VOH VOL HIGH-level input voltage 2.0 LOW-level input voltage HIGH-level output voltage LOW-level output voltage 1.5 − − V 3.0 2.1 − − V 5.5 3.85 − − V 2.0 − − 0.5 V 3.0 − − 0.9 V 5.5 − − 1.65 V IO = −50 µA 2.0 1.9 2.0 − V IO = −50 µA 3.0 2.9 3.0 − V IO = −50 µA 4.5 4.4 4.5 − V IO = −4.0 mA 3.0 2.58 − − V IO = −8.0 mA 4.5 3.94 − − V IO = 50 µA 2.0 − 0 0.1 V IO = 50 µA 3.0 − 0 0.1 V IO = 50 µA 4.5 − 0 0.1 V IO = 4.0 mA 3.0 − − 0.36 V VI = VIH or VIL VI = VIH or VIL IO = 8.0 mA 4.5 − − 0.36 V ILI input leakage current VI = VCC or GND 5.5 − − 0.1 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 10 µA CI input capacitance − − 1.5 10 pF 2003 Sep 04 5 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER MIN. OTHER TYP. MAX. UNIT VCC (V) Tamb = −40 to +85 °C VIH VIL VOH VOL 2.0 1.5 − − V 3.0 2.1 − − V 5.5 3.85 − − V 2.0 − − 0.5 V 3.0 − − 0.9 V 5.5 − − 1.65 V IO = −50 µA 2.0 1.9 − − V IO = −50 µA 3.0 2.9 − − V IO = −50 µA 4.5 4.4 − − V IO = −4.0 mA 3.0 2.48 − − V IO = −8.0 mA 4.5 3.8 − − V IO = 50 µA 2.0 − − 0.1 V IO = 50 µA 3.0 − − 0.1 V IO = 50 µA 4.5 − − 0.1 V IO = 4.0 mA 3.0 − − 0.44 V IO = 8.0 mA 4.5 − − 0.44 V HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL ILI input leakage current VI = VCC or GND 5.5 − − 1.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 10 µA CI input capacitance − − − 10 pF 2003 Sep 04 6 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER MIN. OTHER TYP. MAX. UNIT VCC (V) Tamb = −40 to +125 °C VIH VIL VOH VOL 2.0 1.5 − − V 3.0 2.1 − − V 5.5 3.85 − − V 2.0 − − 0.5 V 3.0 − − 0.9 V 5.5 − − 1.65 V IO = −50 µA 2.0 1.9 − − V IO = −50 µA 3.0 2.9 − − V IO = −50 µA 4.5 4.4 − − V IO = −4.0 mA 3.0 2.40 − − V IO = −8.0 mA 4.5 3.70 − − V IO = 50 µA 2.0 − − 0.1 V IO = 50 µA 3.0 − − 0.1 V IO = 50 µA 4.5 − − 0.1 V IO = 4.0 mA 3.0 − − 0.55 V IO = 8.0 mA 4.5 − − 0.55 V HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL ILI input leakage current VI = VCC or GND 5.5 − − 2.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 40 µA CI input capacitance − − − 10 pF 2003 Sep 04 7 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 Type 74AHCT1G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC (V) OTHER Tamb = 25 °C VIH HIGH-level input voltage 4.5 to 5.5 2.0 − − V VIL LOW-level input voltage 4.5 to 5.5 − − 0.8 V VOH HIGH-level output voltage IO = −50 µA 4.5 4.4 4.5 − V IO = −8.0 mA 4.5 3.94 − − V VOL LOW-level output voltage VI = VIH or VIL VI = VIH or VIL IO = 50 µA 4.5 − 0 0.1 V IO = 8.0 mA 4.5 − − 0.36 V 5.5 − − 0.1 µA ILI input leakage current VI = VIH or VIL ICC quiescent supply current VI = VCC or GND; IO = 0 ∆ICC additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 CI input capacitance 5.5 − − 1.0 µA 5.5 − − 1.35 mA − 1.5 10 pF Tamb = −40 to +85 °C VIH HIGH-level input voltage 4.5 to 5.5 2.0 − − V VIL LOW-level input voltage 4.5 to 5.5 − − 0.8 V VOH HIGH-level output voltage IO = −50 µA 4.5 4.4 − − V IO = −8.0 mA 4.5 3.8 − − V VOL LOW-level output voltage VI = VIH or VIL VI = VIH or VIL IO = 50 µA 4.5 − − 0.1 V IO = 8.0 mA 4.5 − − 0.44 V 5.5 − − 1.0 µA ILI input leakage current VI = VIH or VIL ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 10 µA ∆ICC additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 5.5 − − 1.5 mA CI input capacitance − − − 10 pF 2003 Sep 04 8 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC (V) OTHER Tamb = −40 to +125 °C VIH HIGH-level input voltage 4.5 to 5.5 2.0 − − V VIL LOW-level input voltage 4.5 to 5.5 − − 0.8 V VOH HIGH-level output voltage IO = −50 µA 4.5 4.4 − − V IO = −8.0 mA 4.5 3.70 − − V IO = 50 µA 4.5 − − 0.1 V IO = 8.0 mA 4.5 − − 0.55 V VOL LOW-level output voltage VI = VIH or VIL VI = VIH or VIL ILI input leakage current VI = VIH or VIL 5.5 − − 2.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 5.5 − − 40 µA ∆ICC additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 5.5 − − 1.5 mA CI input capacitance − − − 10 pF 2003 Sep 04 9 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 AC CHARACTERISTICS Type 74AHC1G04 GND = 0 V; tr = tf ≤ 3.0 ns. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS MIN. TYP. MAX. UNIT 3.0 to 3.6 − − 7.1 ns 3.3 − 4.3 − ns CL (pF) VCC (V) Tamb = 25 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 4.5 to 5.5 − − 5.5 ns 5 − 3.1 − ns 3.0 to 3.6 − − 10.6 ns 3.3 − 6.1 − ns 4.5 to 5.5 − − 7.5 ns 5 − 4.5 − ns 3.0 to 3.6 1.0 − 8.5 ns 4.5 to 5.5 1.0 − 6.5 ns 3.0 to 3.6 1.0 − 12 ns 4.5 to 5.5 1.0 − 8.5 ns 3.0 to 3.6 1.0 − 11.0 ns 4.5 to 5.5 1.0 − 7.0 ns 3.0 to 3.6 1.0 − 14.5 ns 4.5 to 5.5 1.0 − 9.5 ns Tamb = −40 to +85 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 Tamb = −40 to +125 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 2003 Sep 04 10 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 Type 74AHCT1G04 GND = 0 V; tr = tf ≤ 3.0 ns. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS CL (pF) MIN. TYP. MAX. UNIT VCC (V) Tamb = 25 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 4.5 to 5.5 − − 6.7 ns 5 − 3.4 − ns 50 4.5 to 5.5 − − 7.7 ns 5 − 4.9 − ns 15 4.5 to 5.5 1.0 − 7.5 ns 50 4.5 to 5.5 1.0 − 8.5 ns 15 4.5 to 5.5 1.0 − 8.5 ns 50 4.5 to 5.5 1.0 − 10.0 ns Tamb = −40 to +85 ° tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 Tamb = −40 to +125 °C tPHL/tPLH 2003 Sep 04 propagation delay input A to output Y see Figs 5 and 6 11 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 AC WAVEFORMS handbook, halfpage VM A input tPHL tPLH VM Y output MNA111 TYPE VI INPUT REQUIREMENTS VM INPUT VM OUTPUT 74AHC1G04 GND to VCC 50% VCC 50% VCC 74AHCT1G04 GND to 3.0 V 1.5 V 50% VCC Fig.5 Input (A) to output (Y) propagation delays. VCC handbook, halfpage PULSE GENERATOR VI VO D.U.T. RT CL MNA101 Definitions for test circuit: CL = load capacitance including jig and probe capacitance (see Chapter “AC characteristics”). RT = termination resistance should be equal to the output impedance Z0 of the pulse generator. Fig.6 Load circuitry for switching times. 2003 Sep 04 12 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 PACKAGE OUTLINES Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2003 Sep 04 REFERENCES IEC JEDEC EIAJ SC-88A 13 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 Plastic surface mounted package; 5 leads SOT753 D E B y A X HE 5 v M A 4 Q A A1 c 1 2 3 Lp detail X bp e w M B 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.100 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT753 2003 Sep 04 REFERENCES IEC JEDEC JEITA SC-74A 14 EUROPEAN PROJECTION ISSUE DATE 02-04-16 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 04 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R44/06/pp16 Date of release: 2003 Sep 04 Document order number: 9397 750 11919