Preliminary Data Sheet PD - 5.035 CPV364MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features 1 • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) • 3 Q1 D1 9 Q3 D3 15 4 6 Q2 D2 12 D5 Q5 10 Q4 D4 18 16 D6 Q6 Product Summary 7 13 Output Current in a Typical 5.0 kHz Motor Drive 13 ARMS per phase (4.1 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 22 12 44 44 9.3 44 10 ± 20 2500 62.5 25 -40 to +150 V A µs V VRMS W °C 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module C-425 Typ. Max. — — 0.1 20 (0.7) 2.0 3.0 — — Units °C/W g (oz) Revision 2 CPV364MM Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.69 — V/°C VGE = 0V, IC = 1.0mA — 1.7 — IC = 12A V GE = 15V — 2.0 — V IC = 22A — 1.9 — IC = 12A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -12 — mV/°C VCE = VGE, IC = 250µA 9.2 12 — S VCE = 100V, I C = 24A — — 250 µA VGE = 0V, V CE = 600V — — 3500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 15A — 1.2 1.6 IC = 15A, T J = 150°C — — ±500 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by maximum junction temperature. Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 59 80 IC = 24A 8.6 10 nC VCC = 400V 25 42 26 — TJ = 25°C 37 — ns IC = 24A, V CC = 480V 240 410 VGE = 15V, R G = 10Ω 230 420 Energy losses include "tail" and 0.75 — diode reverse recovery. 1.65 — mJ 2.4 3.6 — — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 10Ω, VCPK < 500V 28 — TJ = 150°C, 37 — ns IC = 24A, V CC = 480V 380 — VGE = 15V, R G = 10Ω 460 — Energy losses include "tail" and 4.5 — mJ diode reverse recovery. 1500 — VGE = 0V 190 — pF VCC = 30V 20 — ƒ = 1.0MHz 42 60 ns TJ = 25°C 74 120 TJ = 125°C I F = 15A 4.0 6.0 A TJ = 25°C 6.5 10 TJ = 125°C V R = 200V 80 180 nC TJ = 25°C 220 600 TJ = 125°C di/dt = 200A/µs 188 — A/µs TJ = 25°C 160 — TJ = 125°C VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. Refer to Section D for the following: Package Outline 5 - IMS-2 Section D - page D-14 C-426 Pulse width 5.0µs, single shot.