RH1499M - 10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp

RH1499M
10MHz, 6V/µs, Quad
Rail-to-Rail Input and Output
Precision C-Load Op Amp
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH1499M is a quad, rail-to-rail input and output
precision C-Load™ op amp with a typical 10MHz gainbandwidth product and 6V/µs slew rate.
(Note 1)
The RH1499 is designed to maximize input dynamic range
by delivering precision performance over the full supply
voltage. Using a patented technique, the input stages of
the RH1499 are trimmed, one at the negative supply and
the other at the positive supply. The resulting guaranteed
common mode rejection is much better than other railto-rail input op amps. When used as a unity-gain buffer
in front of single supply 12-bit A-to-D converters, the
RH1499 is guaranteed to add less than 1LSB of error even
in single 5V supply systems.
Total Supply Voltage (V+ to V–)..................................36V
Input Current.........................................................±10mA
Output Short-Circuit Duration (Note 2)..........Continuous
Operating Temperature Range................ –55°C to 125°C
Specified Temperature Range................. –55°C to 125°C
Junction Temperature ........................................... 150°C
Storage Temperature Range.................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec)................... 300°C
With 110dB of supply rejection, the RH1499 maintains
its performance over a supply range of 4.5V to 36V. The
inputs can be driven beyond the supplies without damage
or phase reversal of the output. These op amps remain
stable while driving capacitive loads up to 10,000pF.
The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent
military and space applications.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. C-Load is a trademark of Linear Technology Corporation. All other
trademarks are the property of their respective owners.
BURN-IN CIRCUIT
PACKAGE INFORMATION
TOP VIEW
50k
16V
–
100Ω
RH1499M
+
50k
OUT A
1
14
OUT D
–IN A
2
13
–IN D
+IN A
3
12
+IN D
V+
4
11
V–
+IN B
5
10
+IN C
–IN B
6
9
–IN C
OUT B
7
8
OUT C
–16V
W PACKAGE
14-LEAD CERAMIC FLATPAK
RH1499M BI
rh1499mfg
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1
RH1499M
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation) VS = ±15V, VCM = VOUT = 0V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
VOS
VCM = V+, V–
VCM = 14.5V, –14.5V
Input Offset Voltage
NOTES
Input Offset Voltage Match VCM = V+ to V–
(Channel-to-Channel)
VCM = 14.5V to –14.5V
(Note 3)
IB
IOS
Input Bias Current
Input Bias Current Match
(Channel-to-Channel)
(Note 3)
VCM
VCM = 14.5V, –14.5V
Input Offset Current
VCM = V+, V–
VCM = 14.5V, –14.5V
3
Input Voltage Range
Input Noise Voltage
in
Input Noise Current Density f = 1kHz
AVOL
Large-Signal Voltage Gain
VOL
VOH
ISC
1400
0
250
715
–715
–250
0
0
12
200
6
70
–55°C ≤ TA ≤ 125°C
SUBMIN
TYP
MAX GROUP UNITS
1
1
–1200
1
15
1100
450
1800
500
1200
–500
0
nA
nA
nA
nA
50
400
nA
nA
40
300
–14.5
2, 3
= V+ to V–
VCM
VCM = 14.5V to –14.5V
CMRR Match
(Channel-to-Channel)
(Note 3)
VCM = V+ to V–
VCM = 14.5V to –14.5V
Power Supply Rejection
Ratio
VS = ±2V to ±16V
PSRR Match
(Channel-to-Channel)
(Note 3)
VS = ±2V to ±16V
Output Voltage Swing
(Low) (Note 4)
No Load
ISINK = 1mA
ISINK = 10mA
ISINK = 5mA
3
3
µV
µV
2, 3
2, 3
14.5
No Load
ISOURCE = 1mA
ISOURCE = 10mA
ISOURCE = 5mA
V
nVP-P
12
nV/√Hz
5200
500
2300
90
102
84
103
90
110
83
110
Short-Circuit Current
4
nA
nA
400
1000
4
µV
µV
350
0.3
VO = –14.5V to 14.5V,
RL = 10k
VO = –10V to 10V, RL = 2k
Common Mode Rejection
Ratio
Output Voltage Swing
(High) (Note 4)
250
0.1Hz to 10Hz
Input Noise Voltage Density f = 1kHz
PSRR
800
–15
en
CMRR
TA = 25°C
SUBTYP
MAX GROUP
200
3
VCM = V+
VCM = 14.5V
VCM = V–
VCM = –14.5V
= V+, V–
MIN
pA/√Hz
4
1
1
18
50
230
30
100
500
4
2.5
75
420
10
150
800
4
±15
±30
IS
Supply Current per Amp
GBW
Gain-Bandwidth Product
f = 100kHz
6.8
10.5
1.8
SR
Slew Rate
AV = –1, RL = 10k,
VO = ±10V, Measure at
VO = ±5V
3.5
6
1
2.5
60
400
25
100
86
102
80
100
88
100
82
100
4
500
5
100
25
250
300
800
8.5
2.2
4
2.2
dB
dB
dB
dB
180
5.8
1
2, 3
2, 3
75
150
±12
V/mV
V/mV
dB
dB
25
70
±7.5
5, 6
5, 6
5, 6
2, 3
3
2, 3
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
MHz
5, 6
V/µs
rh1499mfg
2
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RH1499M
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
20Krad (Si)
50Krad (Si)
100Krad (Si)
200Krad (Si)
MIN
MIN
MIN
MIN
MIN
SYMBOL PARAMETER
CONDITIONS
MAX
UNITS
VOS
VCM = V+, V–
950
950
950
950
950
µV
= V+, V–
765
815
865
915
965
nA
100
100
100
100
100
nA
Input Offset Voltage
IB
Input Bias Current
VCM
IOS
Input Offset Current
VCM = V+, V–
NOTES
10Krad (Si)
V–
Input Voltage Range
AVOL
CMRR
Large-Signal Voltage
Gain
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
V–
V+
MAX
V–
V+
V–
MAX
V+
V–
V+
V
500
500
500
500
500
V/mV
VO = –10V to 10V,
RL = 2k
250
250
250
250
250
V/mV
VCM = V+ to V–
86
86
86
86
86
dB
83
83
83
83
83
dB
90
90
90
90
90
dB
83
83
83
83
83
dB
3
VS = ±2V to ±16V
PSRR Match
VS = ±2V to ±16V
(Channel-to-Channel)
VOUT
V+
MAX
VO = –14.5V to 14.5V,
RL = 10k
CMRR Match
VCM = V+ to V–
(Channel-to-Channel)
PSRR
MAX
3
Output Voltage
Swing Low
No Load
ISINK = 1mA
ISINK = 10mA
4
60
100
500
60
100
500
60
100
500
60
100
500
60
100
500
mV
mV
mV
Output Voltage
Swing High
No Load
ISOURCE = 1mA
ISOURCE = 10mA
4
20
150
800
20
150
800
20
150
800
20
150
800
20
150
800
mV
mV
mV
ISC
Short-Circuit Current
IS
Supply Current
GBW
Gain-Bandwidth
Product
f = 100kHz
SR
Slew Rate
AV = –1, RL = 10k,
VO = ±10V, Measure
at VO = ±5V
±10
±10
±10
2.5
±10
2.5
2.5
±10
2.5
mA
2.5
mA
4.5
4.5
4.5
4.5
4.5
MHz
3
3
3
3
3
V/µs
TABLE 2: ELECTRICAL CHARACTERISTICS
(Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted.
TA = 25°C
SYMBOL PARAMETER
CONDITIONS
VOS
VCM = V+, V–
VCM = V+ – 0.5V, V– + 0.5V
Input Offset Voltage
NOTES
Input Offset Voltage Match VCM = V+ to V–
(Channel-to-Channel)
VCM = V+ – 0.5V, V– + 0.5V
(Note 3)
IB
Input Bias Current
Input Bias Current Match
(Channel-to-Channel)
(Note 3)
150
800
200
1400
0
250
650
–650
–250
0
0
10
180
MIN
3
VCM = V+
VCM = V+ – 0.5V
VCM = V–
VCM = V– + 0.5V
VCM = V+, V–
VCM = V+ – 0.5V, V– + 0.5V
TYP
SUBMAX GROUP
3
–55°C ≤ TA ≤ 125°C
MIN
MAX
300
1100
350
1800
0
450
1100
–1100
–450
0
nA
nA
nA
nA
0
30
400
nA
nA
1
1
SUBGROUP UNITS
TYP
2, 3
µV
µV
µV
µV
2, 3
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3
RH1499M
TABLE 2: ELECTRICAL CHARACTERISTICS
(Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted.
TA = 25°C
SYMBOL PARAMETER
CONDITIONS
IOS
VCM = V+, V–
VCM = V+ – 0.5V, V– + 0.5V
Input Offset Current
NOTES
MIN
TYP
5
V–
Input Voltage Range
Input Noise Voltage
0.1Hz to 10Hz
–55°C ≤ TA ≤ 125°C
SUBMAX GROUP
65
MIN
1
V+
TYP
MAX
15
300
V– + 0.5V
SUBGROUP UNITS
2, 3
V+ – 0.5V
nA
nA
V
400
nVP-P
en
Input Noise Voltage Density f = 1kHz
12
nV/√Hz
in
Input Noise Current Density f = 1kHz
0.3
pA/√Hz
CIN
Input Capacitance
AVOL
Large-Signal Voltage Gain
VS = 5V, VO = 75mV to 4.8V,
RL = 10k
600
3800
CMRR
Common Mode Rejection
Ratio
VS = 5V, VCM = V+ to V–
VS = 5V, VCM = 0.5V to 4.5V
76
90
CMRR Match
(Channel-to-Channel)
(Note 3)
VS = 5V, VCM = V+ to V–
VS = 5V, VCM = 0.5V to 4.5V
75
91
Power Supply Rejection
Ratio
VS = 4.5V to 12V,
VCM = VO = 0.5V
88
105
PSRR Match
(Channel-to-Channel)
(Note 3)
VS = 4.5V to 12V,
VCM = VO = 0.5V
82
120
VOL
Output Voltage Swing
(Low) (Note 4)
No Load
ISINK = 1mA
ISINK = 2.5mA
4
14
50
90
30
100
200
4
25
65
110
75
150
220
5, 6
mV
mV
mV
VOH
Output Voltage Swing
(High) (Note 4)
No Load
ISOURCE = 1mA
ISOURCE = 2.5mA
4
2.5
70
140
10
150
250
4
5
100
180
25
250
300
5, 6
mV
mV
mV
ISC
Short-Circuit Current
VS = 5V
2, 3
mA
IS
Supply Current per Amp
2, 3
mA
GBW
Gain-Bandwidth Product
VS = 5V, f = 100kHz
6.8
10.5
SR
Slew Rate
VS = ±2.5V, AV = –1,
RL = 10k,VO = ±2V,
Measure at VO = ±1V
2.6
4.5
PSRR
5
3
3
±12.5
pF
4
210
68
85
5, 6
1
1
2.2
dB
dB
86
104
80
118
±5
2, 3
2
2.7
5.8
8.5
2
3.6
dB
dB
±10
1
4
V/mV
dB
dB
66
24
1.7
60
MHz
5, 6
V/µs
TABLE 2A: ELECTRICAL CHARACTERISTICS
(Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted.
10Krad (Si)
100Krad (Si)
200Krad (Si)
MIN
MIN
MIN
MIN
SYMBOL PARAMETER
CONDITIONS
VCM = V+, V–
950
950
950
950
950
µV
= V+, V–
700
750
800
850
900
nA
65
65
65
65
65
nA
IB
Input Bias Current
VCM
IOS
Input Offset Current
VCM = V+, V–
AVOL
CMRR
MAX
50Krad (Si)
VOS
Input Offset Voltage
NOTES MIN
20Krad (Si)
V+
V–
MAX
V+
V–
MAX
V+
V–
MAX
V+
V–
MAX UNITS
Input Voltage Range
V–
V+
Large-Signal Voltage VO = 75mV to V+ – 0.2V
Gain
RL = 10k
Common Mode
VCM = V+ to V–
Rejection Ratio
300
300
300
300
300
V/mV
70
70
70
70
70
dB
V
rh1499mfg
4
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RH1499M
TABLE 2A: ELECTRICAL CHARACTERISTICS
(Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted.
10Krad (Si)
SYMBOL PARAMETER
CONDITIONS
NOTES MIN
CMRR Match
VCM = V+ to V–
(Channel-to-Channel)
PSRR
Power Supply
Rejection Ratio
3
VS = 4.5V to 12V,
VCM = VO = 0.5V
PSRR Match
VS = 4.5V to 12V,
(Channel-to-Channel) VCM = VO = 0.5V
VOUT
ISC
3
MAX
20Krad (Si)
50Krad (Si)
100Krad (Si)
200Krad (Si)
MIN
MIN
MIN
MIN
MAX
MAX
MAX
MAX UNITS
70
70
70
70
70
dB
88
88
88
88
88
dB
82
82
82
82
82
dB
Output Voltage
Swing Low
No Load
ISINK = 1mA
ISINK = 2.5mA
4
60
100
200
60
100
200
60
100
200
60
100
200
60
100
200
mV
mV
mV
Output Voltage
Swing High
No Load
ISOURCE = 1mA
ISOURCE = 2.5mA
4
20
150
250
20
150
250
20
150
250
20
150
250
20
150
250
mV
mV
mV
Short-Circuit Current
IS
Supply Current
SR
Slew Rate
±8
±8
±8
2.2
VS = ±2.5V, AV = –1,
RL = 10k, VO = ±2V,
Measure at VO = ±1V
2
2.2
2
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: A heat sink may be required to keep the junction temperature
below this absolute maximum rating when the output is shorted
indefinitely.
±8
2.2
2
±8
2.2
2
mA
2.2
2
mA
V/µs
Note 3: Matching parameters are the difference between amplifiers A and
D and between B and C.
Note 4: Output voltage swings are measured between the output and
power supply rails.
TABLE 2: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
1,2,3
Group B and D for Class S, and
End Point Electrical Parameters (Method 5005)
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
*PDA applies to subgroup 1. See PDA Test Notes.
TOTAL DOSE BIAS CIRCUIT
40pF
5k
15V
–
8V
5k
+
–15V
RH1499 TC
rh1499mfg
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5
RH1499M
TYPICAL PERFORMANCE CHARACTERISTICS
Large-Signal Voltage Gain
RL = 10k
6000
4000
VS = 5V
VO = 75mV TO 4.8V
2000
VS = ±15V
VO = ±10V
RL = 2k
2000
1000
1
10
100
TOTAL DOSE-Krad (Si)
0
1000
1
10
100
TOTAL DOSE-Krad (Si)
1
400
40
200
20
0
–20
–400
–40
–600
–60
1
10
100
TOTAL DOSE-Krad (Si)
RH1499 G04
1
VS = ±15V, 5V
VCM = 0V
V– ≤ V
CM
CMRR (dB)
110
–600
1000
Power Supply Rejection Ratio
160
≤ V+
±2V ≤ VS ≤ ±16V
VCM = 0V
120
–400
10
100
TOTAL DOSE-Krad (Si)
RH1499 G06
Common Mode Rejection Ratio
130
–200
IB (nA)
–80
1000
RH1499 G05
Input Bias Current
0
0
–200
–800
1000
1000
VS = ±15V, 5V
VCM = 0V
60
IOS (nA)
VOS (µV)
IS (mA)
3
10
100
TOTAL DOSE-Krad (Si)
10
100
TOTAL DOSE-Krad (Si)
Input Offset Current
80
VS = ±15V, 5V
VCM = 0V
600
2
1
RH1499 G03
Input Offset Voltage
800
VS = ±15, 5V
1
0
1000
RH1499 G02
Supply Current per Amp
0
4
2
RH1499 G01
4
VS = ±15V
VO = ±10V
RL = 10k
6
140
VS = ±15V
100
PSRR (dB)
0
Slew Rate
8
3000
VS = ±15V
VO = ±14.5V
AVOL (V/mV)
AVOL (V/mV)
Large-Signal Voltage Gain
4000
SLEW RATE (V/µs)
8000
90
VS = 5V
80
70
120
100
60
–800
1
10
100
TOTAL DOSE-Krad (Si)
1000
RH1499 G07
50
1
10
100
TOTAL DOSE-Krad (Si)
1000
RH1499 G08
80
1
10
100
TOTAL DOSE-Krad (Si)
1000
RH1499 G09
rh1499mfg
6
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RH1499M
REVISION HISTORY
(Revision history begins at Rev B)
REV
DATE
DESCRIPTION
G
06/15
Corrected typo in Table 2A AVOL condition (RL not R1).
PAGE NUMBER
4
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7
RH1499M
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Voltage
2.0
TA = 25°C
TA = –55°C
1.0
0.5
0
0
4
8 12 16 20 24 28 32
TOTAL SUPPLY VOLTAGE (V)
1.0
0.5
–25
75
50
25
TEMPERATURE (°C)
100
0
–100
TA = 125°C
–200
TA = 25°C
125
–400
–2
–1
0
2
3
4
5
1
COMMON MODE VOLTAGE (V)
6
RH1499 G12
VS = ±15V
VCM = 15V
300
1000
100
200
100
0
25
50
75
100
125
TEMPERATURE (°C)
NPN ACTIVE
VS = 5V, 0V
VCM = 5V
PNP ACTIVE
VS = ±15V
VCM = –15V
0
–100
–200
VS = 5V, 0V
VCM = 0V
–300
–400
–50 –35 –20 –5 10 25 40 55 70 85 100
TEMPERATURE (°C)
RH1499 G13
RH1499 G14
Output Saturation Voltage
vs Load Current (Output High)
Output Saturation Voltage
vs Load Current (Output Low)
1000
SATURATION VOLTAGE (mV)
1000
SATURATION VOLTAGE (mV)
TA = –55°C
400
INPUT BIAS CURRENT (nA)
OPEN LOOP VOLTAGE GAIN (V/mV)
0
Input Bias Current
vs Temperature
RL = 2k
VS = ±15V
–25
100
RH1499 G11
Open-Loop Voltage Gain
vs Temperature
10
–50
200
–300
RH1499 G10
10000
VS = 5V, 0V
300
VS = 5V, 0V
1.5
0
–50
36
400
VS = ±15V
INPUT BIAS CURRENT (nA)
TA = 125°C
SUPPLY CURRENT PER AMPLIFIER (mA)
SUPPLY CURRENT PER AMPLIFIER (mA)
2.0
1.5
Input Bias Current
vs Common Mode Voltage
Supply Current vs Temperature
100
10
TA = –55°C
TA = 125°C
1
0.001
TA = 25°C
0.01
0.1
1
LOAD CURRENT (mA)
10
100
TA = 25°C
TA = 125°C
10
TA = –55°C
1
0.001
RH1499 G15
0.01
0.1
1
LOAD CURRENT (mA)
10
RH1499 G16
rh1499mfg
8
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
For more information www.linear.com/RH1499M
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com/RH1499M
ID No. 66-10-1499 • LT 0615 REV G • PRINTED IN USA
 LINEAR TECHNOLOGY CORPORATION 2003