RH1056A Precision, High Speed, JFET Input Operational Amplifier DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1056A JFET input operational amplifiers combine precision specifications with high speed performance. (Note 1) For the first time, 16V/μs slew rate and 6.5MHz gainbandwidth product are simultaneously achieved with offset voltage of typically 50μV, 1.2μV/°C drift, bias currents of 40pA at 70°C. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. Supply Voltage ........................................................±20V Differential Input Voltage.........................................±40V Input Voltage...........................................................±20V Output Short-Circuit Duration .......................... Indefinite Operating Temperature Range................ –55°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec) .................. 300°C PACKAGE INFORMATION TOP VIEW NC 8 BAL 1 –IN 2 +IN 3 – + TOP VIEW 7 V+ 6 OUT 5 BAL 4 NC 1 10 NC BAL 2 9 NC –IN 3 8 V+ +IN 4 7 OUT V– 5 6 BAL V– W PACKAGE 10-LEAD CERPAC H PACKAGE 8-LEAD TO-5 METAL CAN BURN-IN CIRCUIT 10k 20V 2 – 3 + 7 6 200Ω 4 10k –20V RH1056A BI 1 RH1056A TABLE 1: ELECTRICAL CHARACTERISTICS MIN (Preirradiation) (Note 3) TA = 25°C SUBTYP MAX GROUP SYMBOL PARAMETER CONDITIONS NOTES VOS Input Offset Voltage RH1056AMW RH1056AMH 2 300 300 4 4 IOS Input Offset Current Fully Warmed Up TA = 125°C 4 4 10 1 Fully Warmed Up TA = 125°C 4 50 IB Input Bias Current –55°C ≤ TA ≤ 125°C SUBMIN TYP MAX GROUP UNITS 900 1100 2, 3 2, 3 μV μV 1.5 2 pA nA 3.0 2 pA nA 1 1012 RIN Input Resistance AVOL Large-Signal Voltage Gain VS = ±15V, VO = ±10V, RL = 2k VS = ±15V, VO = ±10V, RL = 1k 150 130 4 4 40 5,6 V/mV V/mV VO Output Voltage Swing VS = ±15V, RL = 2k ±12 4 ±12 5,6 V VCM Input Common Mode Voltage Range VS = ±15V ±11 1 ±11 2,3 V CMRR Common Mode Rejection Ratio VCM = ±11V VCM = ±10.5V 86 1 85 2,3 dB dB Power Supply Rejection Ratio VS = ±10V to ±18V VS = ±10V to ±17V 90 88 2,3 dB dB IS Supply Current VS = ±15V SR Slew Rate AV = 1, VS = ±15V PSRR Ω 1 6.5 10 1 mA 7 V/μs GBW Gain-Bandwidth Product VS = ±15V 6.5 MHz en Input Noise Voltage Density VS = ±15V, f = 10Hz VS = ±15V, f = 1kHz 28 14 fA/√Hz fA/√Hz in Input Noise Current Density VS = ±15V, f = 10Hz VS = ±15V, f = 1kHz 1.8 1.8 fA/√Hz fA/√Hz CIN Input Capacitance 4 4 pF TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) SYMBOL PARAMETER CONDITIONS NOTES 10KRAD (Si) MIN MAX 20KRAD (Si) MIN MAX 50KRAD (Si) MIN MAX 100KRAD (Si) 200KRAD (Si) MIN MAX MIN MAX UNITS VOS Input Offset Voltage 2 300 300 370 570 870 μV IOS Input Offset Current 4 ±10 ±50 ±150 ±250 ±350 pA IB Input Bias Current AVOL Large-Signal Voltage Gain VO 4 VO = ±10V, RL ≥ 2k VO = ±10V, RL ≥ 1k ±50 ±250 ±500 ±1000 ±2000 pA 150 130 150 130 150 130 100 87 75 65 V/mV V/mV Output Voltage Swing RL ≥ 2k ±12 ±12 ±12 ±12 ±12 V VCM Input Common Mode VS = ±15V Voltage Range ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection Ratio VCM = ±11V 86 86 86 86 86 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V 90 90 90 90 90 dB IS Supply Current SR Slew Rate CIN Input Capacitance 2 7 AV = 1, VS = ±15V 10 3(Typ) 7 10 3(Typ) 7 9 7 9 3(Typ) 7 9 3(Typ) mA V/μs 3(Typ) pF RH1056A TABLE 1A: ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. Offset voltage is measured under two different conditions: (a) approximately 0.5 seconds after application of power, (b) at TA = 25°C only, with the chip heated to approximately 45°C to account for chip temperature rise when the device is fully warmed up. Note 3: Unless otherwise stated, VS = ± 15V; and VOS, IB and IOS are measured at VCM = 0V. Note 4: The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, TJ. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. TJ = TA + (θJA • PD) where θJA is the thermal resistance from junction to ambient. Note 5: Unless otherwise stated, VS = ±15V, VCM = 0V and TA = 25°C. TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS PDA Test Notes SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6, 7 Group A Test Requirements (Method 5005) 1,2,3,4,5,6, 7 Group B and D for Class S, and Class C and D for Class B** End Point Electrical Parameters (Method 5005) The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. 1 Linear Technology Corporation reserves the right to test to tighter limits than those given. *PDA applies to subgroup 1. See PDA Test Notes. **For D3, D4, B5 and B6 VOS Limit as follows W Package H Package 500μV 700μV TOTAL DOSE BIAS CIRCUIT 10k 15V 2 – 3 + 0.1μF 7 6 10k 8V 4 0.1μF –15V RH1056A BC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH1056A TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage Open-Loop Gain 350 VS = ±15V VCM= 0V 0.4 0.2 0 –0.2 –0.4 –0.6 VS = ±15V VO = ±10V 300 OPEN-LOOP GAIN (V/mV) INPUT OFFSET VOLTAGE (mV) 0.6 RL = 2k 250 RL = 1k 200 150 100 50 0 1 10 100 TOTAL DOSE KRADs (Si) 1 1000 10 100 TOTAL DOSE KRADs (Si) 1056A G02 1056A G01 Input Bias Current Common Mode Rejection Ratio 3.0 130 INPUT BIAS CURRENT (nA) COMMON MODE REJECTION RATIO (dB) VS = ±15V VCM = 0V 2.5 2.0 1.5 1.0 0.5 0 –0.5 VS = ±15V VCM = ±11V 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE KRADs (Si) 1000 1 10 100 TOTAL DOSE KRADs (Si) 1056A G03 1000 1056A G04 Input Offset Current Power Supply Rejection Ratio 0.4 130 POWER SUPPLY REJECTION RATIO (dB) VS = ±15V VCM = 0V 0.3 INPUT OFFSET CURRENT (nA) 1000 0.2 0.1 0 –0.1 –0.2 –0.3 VS = ±10V TO ±18V 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G05 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G06 ID No. 66-10-0160 Rev C 0209 4 Linear Technology Corporation LT 0209 REV C • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1989