Product Overview

Product Overview
2N5302: High Power NPN Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.
Features
• Low Collector-Emitter Saturation Voltage
VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
• Pb-Free Package is Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
2N5302G
Pb-free
Active
NPN
General
Purpose
0.75
30
60
15
60
2
200
TO-2042
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016