Product Overview 2N5302: High Power NPN Bipolar Power Transistor For complete documentation, see the data sheet Product Description The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications. Features • Low Collector-Emitter Saturation Voltage VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc • Pb-Free Package is Available Part Electrical Specifications Product Compliance Status Polarity Type VCE(sat) Max (V) IC Continuo us (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type 2N5302G Pb-free Active NPN General Purpose 0.75 30 60 15 60 2 200 TO-2042 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016