ON Semiconductor High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Symbol 2N5302 Unit VCEO 60 Vdc VCB 60 Vdc Collector Current – Continuous IC 30 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.14 Watts W/C TJ, Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 0.875 C/W Thermal Resistance, Case to Ambient θCA 34 C/W *Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 Figure 1. Power Temperature Derating Curve Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 0 1 Publication Order Number: 2N5302/D 2N5302 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 – – 5.0 – 1.0 – 10 – 1.0 – 5.0 40 15 5.0 – 60 – – – – 0.75 2.0 3.0 – – – 1.7 1.8 2.5 – – 1.7 3.0 Unit *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) ICEX Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) hFE *Collector–Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc) VCE(sat) *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) VBE(sat) *Base–Emitter On Voltage (Note 1) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) VBE(on) – Vdc Vdc Vdc *DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.0 – MHz Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 – – *SWITCHING CHARACTERISTICS Rise Time Storage Time ((VCC = 30 Vdc, dc, IC = 10 0 Adc, dc, IB1 = IB2 = 1.0 0 Adc) dc) Fall Time tr – 1.0 µs ts – 2.0 µs tf – 1.0 µs *Indicates JEDEC Registered Data. Note 1: Pulse Width 300 µs, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2.0% VCC INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2.0% +30 V 3.0 +11 V 10 -2.0 V VCC 3.0 +11 V TO SCOPE tr ≤ 20 ns 0 -9.0 V 10 D VBB = 7.0 V Figure 2. Turn–On time Figure 3. Turn–Off time http://onsemi.com 2 +30 V TO SCOPE tr ≤ 20 ns r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5302 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) θJC(t) = r(t) θJC θJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 0.03 0.02 SINGLE PULSE 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 1000 2000 500 Figure 4. Thermal Response 100 3000 IC, COLLECTOR CURRENT (AMP) 50 100 µs 2000 10 5.0 5.0 ms 5302 1.0 ms TJ = 200°C Secondary Breakdown Limited Bonding Wire Limited TC = 25°C Thermal Limitations Pulse Duty Cycle ≤ 10% 2.0 1.0 0.5 C, CAPACITANCE (pF) 20 dc TJ = 25°C 1000 Cib 500 200 2N5302 0.2 0.1 1.0 50 2.0 3.0 5.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.5 100 Figure 5. Active–Region Safe Operating Area TJ = 25°C IC/IB = 10 ts′ 1.0 t, TIME (s) µ 1.0 0.7 0.5 tr @ VCC = 30 V 0.3 30 50 TJ = 25°C IB1 = IB2 IC/IB = 10 ts′ ≈ ts - 1/8 tf 0.7 0.5 tf @ VCC = 30 V 0.3 0.2 0.07 0.05 0.03 0.05 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.0 0.1 1.0 Figure 6. Capacitance versus Voltage 5.0 3.0 t, TIME (s) µ Cob 300 tf @ VCC = 10 V tr @ VCC = 10 V td @ VOB = 2.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 0.1 0.03 0.05 20 30 Figure 7. Turn–On Time 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 8. Turn–Off Time http://onsemi.com 3 10 30 300 hFE, DC CURRENT GAIN VCE = 10 V VCE = 2.0 V TJ = 175°C 200 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5302 25°C 100 70 50 -55°C 30 20 10 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 2.0 TJ = 25°C 1.6 0.8 0.4 0 0.01 0.02 IC = 2 x ICES 105 IC ≈ ICES 40 60 80 100 140 180 160 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base–Emitter Resistance Figure 12. “On” Voltages θV, TEMPERATURE COEFFICIENTS (mV/°C) IC, COLLECTOR CURRENT (A) µ 1.0 0 0.03 0.05 200 103 102 TJ = 175°C 100°C 101 25°C 100 IC = ICES 10-1 10-2 10-3 -0.4 -0.3 REVERSE -0.2 -0.1 FORWARD 0 0.1 0.2 10 1.2 TJ, JUNCTION TEMPERATURE (°C) VCE = 30 V 5.0 1.4 0.2 120 2.0 TJ = 25°C 0.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 20 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 1.6 IC = 10 x ICES 0 0.05 1.8 V, VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 102 20 A 2.0 VCE = 30 V 103 10 A Figure 10. Collector Saturation Region 108 104 5.0 A 1.2 Figure 9. DC Current Gain 106 IC = 2.0 A 0.3 0.4 0.5 0.6 10 +2.5 TJ = -55°C to +175°C +2.0 +1.5 +1.0 *APPLIES FOR IC/IB < +0.5 hFE@VCE 2.0V 2 *θVC for VCE(sat) 0 -0.5 -1.0 θVB for VBE(sat) -1.5 -2.0 -2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut–Off Region Figure 14. Temperature Coefficients http://onsemi.com 4 30 30 2N5302 PACKAGE DIMENSIONS TO–204 (TO–3) CASE 1–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M http://onsemi.com 5 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N5302 Notes http://onsemi.com 6 2N5302 Notes http://onsemi.com 7 2N5302 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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