Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5301 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5302 Open emitter IC 60 2N5303 80 2N5301 40 2N5302 Emitter-base voltage Open base 60 Base current PD Total power dissipation Tj Tstg V V 80 Open collector 5 2N5301/5302 30 2N5303 20 Collector current IB UNIT 40 2N5303 VEBO VALUE V A 7.5 A 200 W Junction temperature 200 ℃ Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 VCEsat-2 VCEsat-3 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage IC=0.2A ;IB=0 VBE-2 Base-emitter on voltage 0.75 V 1.0 2N5301/5302 IC=20A ;IB=2A 2.0 2N5303 IC=15A ;IB=1.5A 1.5 2N5301/5302 IC=30A ;IB=6A 3.0 2N5303 IC=20A ;IB=4A 2.0 IC=10A; IB=1A 1.7 V V Base-emitter saturation voltage Base-emitter on voltage 80 2N5303 VBEsat-2 VBE-1 UNIT V IC=10A; IB=1A Base-emitter saturation voltage Base-emitter saturation voltage MAX 60 2N5301/5302 VBEsat-1 VBEsat-3 TYP. 40 2N5303 VCEsat-1 MIN 2N5301/5302 V 1.8 IC=15A ;IB=1.5A V 2.0 2N5303 2N5301/5302 IC=20A ;IB=2A 2N5303 IC=20A ;IB=4A 2N5301/5302 IC=15A ; VCE=2V 1.7 2N5303 IC=10A ; VCE=2V 1.5 2N5301/5302 IC=30A ; VCE=4V 3.0 2N5303 IC=20A ; VCE=4V 2.5 2.5 V V V ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ 1.0 10 mA ICEO Collector cut-off current VCE=Rated VCEO; IB=0 5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=1A ; VCE=2V hFE-2 DC current gain hFE-3 fT 2N5303 IC=10A ; VCE=2V 2N5301/5302 IC=15A ; VCE=2V 2N5303 IC=20A ; VCE=4V 2N5301/5302 IC=30A ; VCE=4V 15 DC current gain Transition frequency 40 60 5 IC=1A ; VCE=10V;f=1.0MHz 2 2 MHz Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3