ONSEMI 2N5302G

2N5302
High−Power NPN Silicon
Transistor
High−power NPN silicon transistors are for use in power amplifier
and switching circuits applications.
Features
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• Low Collector−Emitter Saturation Voltage −
•
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc
Pb−Free Package is Available*
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MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector Current − Continuous (Note 2)
Symbol
Value
Unit
VCEO
60
Vdc
VCB
60
Vdc
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
W
W/_C
TJ, Tstg
– 65 to + 200
_C
Operating and Storage Junction
Temperature Range
30 AMPERES
POWER TRANSISTOR
NPN SILICON
60 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
Thermal Resistance, Case−to−Ambient
qCA
34
_C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2N5302G
AYYWW
MEX
PD, POWER DISSIPATION (WATTS)
TA TC
8.0 200
6.0 150
TC
4.0 100
TA
2.0
50
0
0
0
20
40
60
80
100 120 140
TEMPERATURE (°C)
2N5302
G
A
YY
WW
MEX
160
180
200
ORDERING INFORMATION
Device
Figure 1. Power Temperature Derating Curve
2N5302
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006− Rev. 2
1
= Device Code
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Origin
2N5302G
Package
Shipping
TO−204
100 Units/Tray
TO−204
(Pb−Free)
100 Units/Tray
Publication Order Number:
2N5302/D
2N5302
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
−
−
5.0
−
1.0
−
10
−
1.0
−
5.0
40
15
5.0
−
60
−
−
−
−
0.75
2.0
3.0
−
−
−
1.7
1.8
2.5
−
−
1.7
3.0
Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
ICEX
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
*(IC = 15 Adc, VCE = 2.0 Vdc)
*(IC = 30 Adc, VCE = 4.0 Vdc)
hFE
*Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 20 Adc, IB = 2.0 Adc)2
(IC = 30 Adc, IB = 6.0 Adc)
VCE(sat)
*Base Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 20 Adc, IB = 2.0 Adc)
VBE(sat)
*Base−Emitter On Voltage (Note 4)
(IC = 15 Adc, VCE = 2.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
−
MHz
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
−
−
SWITCHING CHARACTERISTICS (Note 3)
Rise Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
Storage Time
Fall Time
tr
−
1.0
ms
ts
−
2.0
ms
tf
−
1.0
ms
3. Indicates JEDEC Registered Data.
4. Pulse Width v 300 ms, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
VCC
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 ms
DUTY CYCLE = 2.0%
+30 V
3.0
+11 V
VCC
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 ms
DUTY CYCLE = 2.0%
+30 V
3.0
+11 V
10
−2.0 V
TO
SCOPE
tr ≤ 20 ns
10
TO
SCOPE
tr ≤ 20 ns
0
−9.0 V
D
VBB = 7.0 V
Figure 2. Turn−On time
Figure 3. Turn−Off time
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2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2N5302
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
qJC(t) = r(t) qJC
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.01
0.02
0.03
SINGLE PULSE
0.02
0.01
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
t, TIME (ms)
20
30
50
100
200 300
500
1000 2000
Figure 4. Thermal Response
100
3000
100 ms
IC, COLLECTOR CURRENT (AMP)
50
2000
10
5.0 ms
5302
5.0
C, CAPACITANCE (pF)
20
dc
1.0 ms
TJ = 200°C
Secondary Breakdown Limited
Bonding Wire Limited
TC = 25°C
Thermal Limitations
Pulse Duty Cycle ≤ 10%
2.0
1.0
0.5
TJ = 25°C
1000
Cib
500
Cob
300
200
2N5302
0.2
0.1
1.0
2.0 3.0
5.0
10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
0.5
100
Figure 5. Active−Region Safe Operating Area
TJ = 25°C
IC/IB = 10
2.0
ts′
1.0
t, TIME (s)
μ
1.0
0.7
0.5
tr @ VCC = 30 V
0.3
50
TJ = 25°C
IB1 = IB2
IC/IB = 10
ts′ ≈ ts − 1/8 tf
0.7
0.5
tf @ VCC = 30 V
0.3
0.2
tf @ VCC = 10 V
tr @ VCC = 10 V
0.1
30
3.0
3.0
0.07
0.05
0.03 0.05
2.0 3.0
5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
5.0
t, TIME (s)
μ
1.0
td @ VOB = 2.0 V
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
10
0.1
0.03 0.05
20 30
Figure 7. Turn−On Time
0.1
0.3 0.5
1.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn−Off Time
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3
10
30
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2N5302
300
200
hFE , DC CURRENT GAIN
VCE = 10 V
VCE = 2.0 V
TJ = 175°C
25°C
100
70
50
−55 °C
30
20
10
0.03 0.05
0.1
0.3 0.5
1.0 3.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
30
2.0
TJ = 25°C
1.6
IC = 2.0 A
108
0.8
0.4
0
0.01 0.02
0.05
0.1 0.2
0.5
1.0
IB, BASE CURRENT (AMP)
2.0
5.0
10
2.0
VCE = 30 V
1.6
IC = 10 x ICES
106
IC = 2 x ICES
105
IC ≈ ICES
104
103
20
40
60
80
100
1.4
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
0.4
TYPICAL ICES VALUES OBTAINED
FROM FIGURE 13
0
TJ = 25°C
1.8
107
V, VOLTAGE (VOLTS)
RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
20 A
Figure 10. Collector Saturation Region
VCE(sat) @ IC/IB = 10
0.2
120
140
160
180
0
0.03 0.05
200
0.1
0.3
0.5
1.0
3.0
5.0
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Effects of Base−Emitter Resistance
Figure 12. “On” Voltages
VCE = 30 V
102
θV, TEMPERATURE COEFFICIENTS (mV/°C)
103
IC, COLLECTOR CURRENT (A)
μ
10 A
1.2
Figure 9. DC Current Gain
102
5.0 A
TJ = 175°C
100°C
101
25°C
100
IC = ICES
10−1
10− 2
10− 3
−0.4 −0.3
REVERSE
−0.2 −0.1
FORWARD
0
0.1
0.2
0.3
0.4
0.5
0.6
10
+2.5
TJ = −55°C to +175°C
+2.0
+1.5
*APPLIES FOR IC/IB <
+1.0
+0.5
hFE@VCE + 2.0V
2
*qVC for VCE(sat)
0
−0.5
−1.0
qVB for VBE(sat)
−1.5
−2.0
−2.5
0.03 0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
VBE, BASE−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
Figure 13. Collector Cut−Off Region
Figure 14. Temperature Coefficients
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4
30
30
2N5302
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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