ONSEMI MJE344G

MJE344
Plastic NPN Silicon
Medium−Power Transistor
This device is useful for medium voltage applications requiring high
fT such as converters and extended range amplifiers.
Features
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• Pb−Free Package is Available*
MAXIMUM RATINGS
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Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
200
Vdc
Collector−Base Voltage
VCB
200
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
IC
500
mAdc
Base Current
IB
250
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
20
0.16
W
mW/_C
TJ, Tstg
–65 to +150
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
6.25
_C/W
Collector Current − Continuous
Operating and Storage Junction
Temperature Range
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
TO−225
CASE 77
STYLE 1
3
2 1
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
JE344G
Y
WW
JE344
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE344
MJE344G
Package
Shipping
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MJE344/D
MJE344
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
200
−
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
−
1.0
mAdc
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
−
0.1
mAdc
hFE
30
300
−
Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
1.0
Vdc
Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
VBE(on)
−
1.0
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
fT
15
−
MHz
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
Cob
−
15
pF
Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
IC, COLLECTOR CURRENT (AMP)
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
500ms
0.5
1.0ms
0.2
TJ = 150°C
ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
0.02
0.01
10
20
30 40
60
100
200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
300
Figure 1. Active Region Safe Operating Area
300
1.0
VCE = 2.0 V
VCE = 10 V
200
0.8
100
70
50
30
VOLTAGE (VOLTS)
hFE , CURRENT GAIN
TJ = +150°C
+100°C
+25 °C
−55 °C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
0.6
0.4
VCE(sat) @ IC/IB = 10
20
0.2
TJ = +25°C
IC/IB = 5.0
10
1.0
2.0 3.0 5.0 7.0 10
20
50 70 100
IC, COLLECTOR CURRENT (mA)
0
200 300 500
10
20
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
Figure 2. DC Current Gain
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2
500
MJE344
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
Q
M
−A−
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
M
A
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJE344/D