ONSEMI BD159

BD159
Plastic Medium Power
NPN Silicon Transistor
This device is designed for power output stages for television, radio,
phonograph and other consumer product applications.
http://onsemi.com
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopadt Construction Provides High Power Dissipation Rating
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 20 WATTS
for High Reliability
• Pb−Free Package is Available*
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MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
350
Vdc
Collector−Base Voltage
VCB
375
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
20
0.16
W
mW/_C
TJ, Tstg
–65 to +150
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
6.25
_C/W
Collector Current
− Continuous
− Peak
Operating and Storage Junction
Temperature Range
TO−225
CASE 77
STYLE 1
3
2 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
YWW
BD159G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Y
WW
BD159
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
BD159
BD159G
Package
Shipping
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
1
Publication Order Number:
BD159/D
BD159
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
BVCEO
350
−
Vdc
Collector Cutoff Current (at rated voltage)
ICBO
−
100
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
−
100
mAdc
hFE
30
240
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
1.0
PD, POWER DISSIPATION (WATTS)
25
V, VOLTAGE (VOLTS)
20
15
0.8
VBE @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
10
0.2
TJ = + 25°C
IC/IB = 5.0
5.0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
0
160
10
20
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Power−Temperature Derating Curve
1.0
0.7
0.5
500 ms
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below, the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
10 ms
dc
0.2
0.1
0.07
0.05
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
0.01
500
Figure 2. “On” Voltages
1.0 ms
TJ = 150°C
0.3
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
300
Figure 3. DC Safe Operating Area
300
VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
200
TJ = 150°C
100
+ 100°C
70
50
+ 25°C
30
20
10
− 55°C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current Gain
http://onsemi.com
2
70
100
200
300
500
BD159
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
Q
M
−A−
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
M
A
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
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For additional information, please contact your
local Sales Representative.
BD159/D