Product Overview

Product Overview
2N5883: 25 A, 60 V PNP Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
Features
• Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
• Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
• Excellent DC Current Gain
hFE = 20 (min) at IC = 10 Adc
• High Current Gain Bandwidth Product
ft = 4.0 MHz (min) at IC = 1.0 Adc
• Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
2N5883G
Pb-free
Active
PNP
General
Purpose
1
25
60
20
100
4
200
TO-2042
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016