2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS • Low Collector−Emitter Saturation Voltage − • • • • http://onsemi.com VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.0 Adc Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ TO−204AA (TO−3) CASE 1−07 STYLE 1 MAXIMUM RATINGS (Note 1) Rating Symbol Collector−Emitter Voltage 2N5883, 2N5885 2N5884, 2N5886 VCEO Collector−Base Voltage Value Unit Vdc 60 80 VCB 2N5883, 2N5885 2N5884, 2N5886 Emitter−Base Voltage Vdc 60 80 VEB 5.0 Vdc Collector Current − Continuous Peak IC Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 200 1.15 W W/°C TJ, Tstg – 65 to + 200 °C Operating and Storage Junction Temperature Range MARKING DIAGRAM 2N588xG AYYWW MEX Adc 25 50 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 0.875 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. 2N588x G A YY WW MEX = Device Code x = 3, 4, 5, or 6 = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 11 1 Publication Order Number: 2N5883/D 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted) Characteristic Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N5883, 2N5885 2N5884, 2N5886 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5883, 2N5885 2N5984, 2N5886 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5883, 2N5885 2N5884, 2N5886 Symbol Min Max Unit VCEO(sus) 60 80 − − Vdc − − 2.0 2.0 mAdc − − − − 1.0 1.0 10 10 mAdc − − 1.0 1.0 mAdc − 1.0 mAdc 35 20 4.0 − 100 − − − 1.0 4.0 Vdc ICEO ICEX ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) VBE(sat) − 2.5 Vdc VBE(on) − 1.5 Vdc Base−Emitter On Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc) (IC = 10 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5883, 2N5884 2N5885, 2N5886 Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) fT 4.0 − MHz Cob − − 1000 500 pF hfe 20 − − tr − 0.7 ms ts − 1.0 ms tf − 0.8 ms SWITCHING CHARACTERISTICS Rise Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Storage Time Fall Time 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest. PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 175 200 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) VCC −30 V TURN−ON TIME RL +2.0 V 3.0 10 0 TO SCOPE tr ≤ 20 ns RB tr ≤ 20ns 2.0 −11V 0.7 0.5 10 to 100 ms VCC TURN−OFF TIME RL +9.0V 10 3.0 TO SCOPE tr ≤ 20 ns 0 RB tr ≤ 20ns 10 to 100 ms −30 V t, TIME (s) μ DUTY CYCLE ≈ 2.0% −11V TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 0.3 tr 0.2 0.1 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) td 0.07 0.05 0.03 VBB +7.0 V 0.02 0.3 DUTY CYCLE ≈ 2.0% 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 20 30 Figure 3. Turn−On Time Figure 2. Switching Time Equivalent Test Circuits r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 SINGLE PULSE P(pk) qJC(t) = r(t) qJC qJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPERES) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200°C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 ms 50 1ms 20 dc 10 5ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 5.0 2.0 1.0 0.5 0.2 0.1 1.0 2N5883, 2N5885 2N5884, 2N5886 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active−Region Safe Operating Area http://onsemi.com 3 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 3.0 ts 2.0 t, TIME (s) μ TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2000 C, CAPACITANCE (pF) 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 Cob Cib 1000 500 tf 0.2 0.1 0.3 0.5 0.7 Cib 700 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 300 0.1 30 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) PNP DEVICES 2N5883 and 2N5884 VCE = 4.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 700 500 300 25°C −55 °C 100 70 50 30 VCE = 4.0 V TJ = 150°C 300 200 100 70 50 25°C 30 −55 °C 20 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 10 0.3 20 30 0.5 0.7 2.0 TJ = 25°C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.4 0 0.01 0.02 0.05 0.1 0.5 0.2 1.0 IB, BASE CURRENT (AMPERES) 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 9. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 NPN DEVICES 2N5885 and 2N5886 TJ = 150°C 200 50 Figure 7. Capacitance Figure 6. Turn−Off Time 1000 700 500 Cob 2.0 5.0 10 2.0 TJ = 25°C 1.6 1.2 IC = 2.0 A 5.0 A 10 A 20 A 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, COLLECTOR CURRENT (AMPERES) Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region http://onsemi.com 4 10 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 0 30 0.3 IC, COLLECTOR CURRENT (AMPERES) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) Figure 12. “On” Voltages Figure 13. “On” Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G Package Shipping TO−204 TO−204 (Pb−Free) TO−204 TO−204 (Pb−Free) 100 Units / Tray 2N5885 2N5885G 2N5886 2N5886G TO−204 TO−204 (Pb−Free) TO−204 TO−204 (Pb−Free) http://onsemi.com 5 20 30 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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