Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO CONDITIONS 2N6058 Open emitter 2N6059 VALUE 80 UNIT V 100 2N6058 Open base 2N6059 80 V 100 Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A IB Base current 0.2 mA PD Total Power Dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(sus) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6058 MIN TYP. MAX UNIT 80 V 100 V IC=0.1A ;IB=0 2N6059 VCEsat-1 Collector-emitter saturation voltage IC=6A IB=24mA 2 V VCEsat-2 Collector-emitter saturation voltage IC=12A IB=120mA 3 V VBEsat Collector-emitter saturation voltage IC=12A IB=120mA 4 V VBE Base-emitter on voltage IC=6A ; VCE=3V 2.8 V ICEO Collector cut-off current 1 mA 2 mA 2N6058 VCE=40V; IB=0 2N6059 VCE=50V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=6A ; VCE=3V 750 hFE-2 DC current gain IC=12A ; VCE=3V 100 Trainsistion frequency IC=5A ;VCE=3V;f=1MHz fT JMnic 4 MHz Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic