Inchange Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6058 VCBO Collector-base voltage 80 Open base 2N6059 VEBO V 100 2N6058 Collector-emitter voltage Emitter-base voltage UNIT 80 Open emitter 2N6059 VCEO VALUE V 100 Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A IB Base current 0.2 mA PD Total Power Dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6058 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 80 IC=0.1A ;IB=0 V 100 2N6059 VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA 3.0 V Base-emitter saturation voltage IC=12A ;IB=120mA 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=3V 2.8 V ICEO Collector cut-off current 1.0 mA 2.0 mA VBEsat 2N6058 2N6059 VCE=40V; IB=0 VCE=50V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=6A ; VCE=3V 750 hFE-2 DC current gain IC=12A ; VCE=3V 100 Trainsistion frequency IC=5A ;VCE=3V;f=1MHz fT 2 4 MHz Inchange Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3