PRODUCT / PROCESS CHANGE NOTIFICATION Generic Copy 27-DEC-2000 SUBJECT: TITLE: Product/Process Change Notification #10542 SOT23 Assembly/Test Qualification At KEC-T EFFECTIVE DATE: 07-Apr-2001 AFFECTED CHANGE CATEGORY(S): On Semiconductor Assy Site On Semiconductor Test Site AFFECTED PRODUCT DIVISION: Discrete Products Division ADDITIONAL RELIABILITY DATA: None SAMPLES: Contact Below Contact your local ON Semiconductor Sales Office. or Jake Lee <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Jake Lee <[email protected]> DISCLAIMER: ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor sales office. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce Assembly/Test qualification of SOT23 manufacturing at KEC-T(Korea Electronic Company, Thailand), ON Semiconductor's subcontractor in Thailand. This notification affects NPN/PNP General purpose transistors, and Switching diodes. KEC-T has been both QS9000 certified and AEC qualified since 1998 and has been producing all the technologies in TO92 package for customers worldwide since 1996. This expansion will provide additional flexibility and capacity needed to improve responsiveness and on time delivery to our valuable customers. There will be no change to the form, fit, and function of the devices. Device parameters will continue to meet all Data Book specifications, and reliability will continue to meet or exceed ON Semiconductor standards. Issue Date: 27 December, 2000 Page 1 of 4 Product/Process Change Notification #10542 QUALIFICATION PLAN: *Per AEC-Q101 guidelines. TEST* HTRB TEMP. CYCLE CONDITIONS EXCEPTIONS Va=150 degC, V=rated, 1000 hours Air to Air, Ta=-65 to +150 degC, dwell greater than or equal to 10 mins, 1000 cycles Ta=121 degC, RH= 100%, PSIg=15, 96 hours V=rated, Ta=85 C, RH= 85%, 1000 hours Ta=25 degC, delta Tj =>100 C, 3.5 minutes on/off, 15000 cycles HBM, MM, CDM AUTOCLAVE H3TRB IOL ESD ADDITIONAL TESTS SOLDERABILITY RES. TO SOLDER HEAT CONDITIONS % voiding after furnace pass 270 degC, Td=10s EXCEPTIONS Ran 77/lot vrs 30/lot QUALIFICATION VEHICLE JUSTIFICATION: FAMILY NPN PNP HIGH VOLTAGE SWITCHING DIODE QUAL. DEVICE BCX19LT1, BCX17LT1, MMBTA92LT1, BAS21LT1 REASON CHOSEN Largest Die; highest voltage RELIABILITY DATA SUMMARY: RELIABILITY TESTS, ADDITIONAL TESTS AND RESULTS Interim result after 504 hours for BCX17LT1, BAS21LT1 TEST DESCRIPTION RESULT (504 hours) HTRB TEMPERATURE CYCLE AUTOCLAVE H3TRB IOL 0/77 0/77 0/77 0/77 0/77 RESULT (1008 hours) On On On On On test test test test test Reliability Testing Conclusions Interim Reliability Testing after 504 hours shows SOT23 assembly/test meet AEC-Q101 / ON Semiconductor requirements. A copy of the full Reliability Report (1008 hours data) will be available in Feb, 2001. Issue Date: 27 December, 2000 Page 2 of 4 Product/Process Change Notification #10542 ELECTRICAL CHARACTERIZATION SUMMARY: BAS21LT1 PARAMETER CONDITION MIN. MAX. AVERAGE STD. DEV. CPK VF1(V) If=100mA .913 .918 .915 .001 28.598 VF2(V) If=200mA .980 .996 .993 .003 26.65 IR1(nA) Vr=250V 3.88 8.97 6.63 1.45 22938.97 IR2(nA) Vr=200V 3.54 9.63 6.26 1.64 18.99 BCX17LT1 PARM. CNDT. Bvces Bvceo (V) (V) Ic=10uA Ic=10mA MIN MAX AVG S.Dv CPK 80.5 89.8 85.0 2.47 4.73 70.5 73.6 71.4 .77 11.48 Iebo (nA) Veb=5V Icbo Vce Vbe Hfe1 Hfe2 (nA) (sat)(V) (on)(V) Vce=20V 500mA/ 1V/ 1V/ 1V/ 50mA 500mA 100mA 300mA 3.01 4.74 .228 .887 272 180.0 3.97 9.80 .280 .931 299 201.0 3.46 6.73 .239 .894 286 192.1 1.88 1.46 .010 .008 6.6 5.14 17747.98 226.03 13.27 12.11 12.54 7.90 Hfe3 1V/ 50mA 77.1 97.2 88.0 4.83 3.31 BCX19LT1 PARM. CNDT. MIN MAX Avrg S.Dev CPK Bvces Bvceo (V) (V) Ic=10uA Ic=10mA 150 158 154 1.86 18.63 65.1 72.1 70.8 1.55 5.54 Iebo Icbo Vce Vbe Hfe1 Hfe2 Hfe3 (nA0) (nA) (sat)(V) (on)(V) Veb=5V Vce=20V 500mA/ 1V/ 1V/ 1V/ 1V/ 50mA 500mA 100mA 300mA 50mA 3.48 5.60 .187 .877 154 121 80.9 8.44 7.78 .283 .960 175 144 96.3 4.20 5.38 .199 .886 160 126 84.4 9.18 1.72 .0019 .016 5.4 5.45 3.65 3396 18.88 7.48 6.50 15.43 3.46 4.06 MMBTA92LT1 PARM. Bvceo Bvcbo (V) (V) CNDT. Ie= Ic= V/10mA 10V/30mA 100uA 100uA Min 7.43 432 Max 7.46 451 Avrg 7.45 445 S.Dv .008 6.68 CPK 98.21 7.23 Bvceo (V) Ic= Iebo (nA) Veb= 1mA 3v 423 .59 452 1.27 444 .90 10.23 .16 4.67 204.91 Icbo (nA) Vce= Vce Vbe (sat)(V) (sat)(V) 20mA/ 2mA 200V 7.14 32.8 22.1 13.9 5.45 2mA .127 .146 .139 .006 18.74 2mA .766 .769 .768 .001 57.78 Hfe1 Hfe2 20mA/ 1mA 154 162 157 2.23 19.75 Hfe3 2mA 10V/1mA 10 10mA 30 151 147 158 155 153 151 2.31 2.21 16.39 18.88 CHANGED PART IDENTIFICATION: For site identification purpose, the date code character will be rotated 90 degrees counterclockwise and have a bar on the top with respect to the device marking. Selected sample builds are available after ww02 and complete samples will be after ww06, 2001. Customers may receive these products manufactured starting with data code 0106 or later. Issue Date: 27 December, 2000 Page 3 of 4 Product/Process Change Notification #10542 AFFECTED DEVICE LIST: PART BAS16LT1 BAS21LT1 BAV70LT1 BAV99LT1 BAV99LT3 BAW56LT1 BC807-25LT1 BC807-40LT1 BC817-25LT1 BC817-40LT1 BC846BLT1 BC847BLT1 BC847BLT3 BC847CLT1 BC847CLT3 BC848BLT1 BC848CLT1 BC856BLT1 BC857BLT1 BC857BLT3 BC858BLT1 BC858CLT1 MMBD6050LT1 MMBD7000LT1 MMBD914LT1 MMBD914LT3 MMBT2222ALT1 MMBT2222ALT3 MMBT2222LT1 MMBT2907ALT1 MMBT2907ALT3 MMBT3904LT1 MMBT3904LT3 MMBT3906LT1 MMBT3906LT3 MMBT4401LT1 MMBT4403LT1 MMBT5551LT1 MMBTA06LT1 MMBTA06LT3 MMBTA42LT1 MMBTA56LT1 MMBTA92LT1 Issue Date: 27 December, 2000 Page 4 of 4