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PRODUCT / PROCESS CHANGE NOTIFICATION
Generic Copy
27-DEC-2000
SUBJECT:
TITLE:
Product/Process Change Notification #10542
SOT23 Assembly/Test Qualification At KEC-T
EFFECTIVE DATE: 07-Apr-2001
AFFECTED CHANGE CATEGORY(S):
On Semiconductor Assy Site
On Semiconductor Test Site
AFFECTED PRODUCT DIVISION:
Discrete Products Division
ADDITIONAL RELIABILITY DATA: None
SAMPLES: Contact Below
Contact your local ON Semiconductor Sales Office.
or Jake Lee <[email protected]>
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact Sales Office or Jake Lee <[email protected]>
DISCLAIMER:
ON Semiconductor will consider this change approved unless
specific conditions of acceptance are provided in writing within
30 days of receipt of this notice. To do so, contact your
local ON Semiconductor sales office.
DESCRIPTION AND PURPOSE:
ON Semiconductor is pleased to announce Assembly/Test
qualification of SOT23 manufacturing at KEC-T(Korea Electronic
Company, Thailand), ON Semiconductor's subcontractor in Thailand.
This notification affects NPN/PNP General purpose transistors,
and Switching diodes. KEC-T has been both QS9000 certified and
AEC qualified since 1998 and has been producing all the technologies
in TO92 package for customers worldwide since 1996. This expansion
will provide additional flexibility and capacity needed to improve
responsiveness and on time delivery to our valuable customers.
There will be no change to the form, fit, and function of the
devices. Device parameters will continue to meet all Data Book
specifications, and reliability will continue to meet or exceed
ON Semiconductor standards.
Issue Date: 27 December, 2000
Page 1 of 4
Product/Process Change Notification #10542
QUALIFICATION PLAN:
*Per AEC-Q101 guidelines.
TEST*
HTRB
TEMP. CYCLE
CONDITIONS
EXCEPTIONS
Va=150 degC, V=rated, 1000 hours
Air to Air, Ta=-65 to +150 degC,
dwell greater than or equal to
10 mins, 1000 cycles
Ta=121 degC, RH= 100%,
PSIg=15, 96 hours
V=rated, Ta=85 C, RH= 85%, 1000 hours
Ta=25 degC, delta Tj =>100 C,
3.5 minutes on/off, 15000 cycles
HBM, MM, CDM
AUTOCLAVE
H3TRB
IOL
ESD
ADDITIONAL TESTS
SOLDERABILITY
RES. TO SOLDER HEAT
CONDITIONS
% voiding after furnace pass
270 degC, Td=10s
EXCEPTIONS
Ran 77/lot vrs
30/lot
QUALIFICATION VEHICLE JUSTIFICATION:
FAMILY
NPN
PNP
HIGH VOLTAGE
SWITCHING DIODE
QUAL. DEVICE
BCX19LT1,
BCX17LT1,
MMBTA92LT1,
BAS21LT1
REASON CHOSEN
Largest Die; highest voltage
RELIABILITY DATA SUMMARY:
RELIABILITY TESTS, ADDITIONAL TESTS AND RESULTS
Interim result after 504 hours for BCX17LT1, BAS21LT1
TEST DESCRIPTION
RESULT
(504 hours)
HTRB
TEMPERATURE CYCLE
AUTOCLAVE
H3TRB
IOL
0/77
0/77
0/77
0/77
0/77
RESULT
(1008 hours)
On
On
On
On
On
test
test
test
test
test
Reliability Testing Conclusions
Interim Reliability Testing after 504 hours shows SOT23
assembly/test meet AEC-Q101 / ON Semiconductor requirements.
A copy of the full Reliability Report (1008 hours data)
will be available in Feb, 2001.
Issue Date: 27 December, 2000
Page 2 of 4
Product/Process Change Notification #10542
ELECTRICAL CHARACTERIZATION SUMMARY:
BAS21LT1
PARAMETER
CONDITION
MIN.
MAX.
AVERAGE
STD. DEV.
CPK
VF1(V)
If=100mA
.913
.918
.915
.001
28.598
VF2(V)
If=200mA
.980
.996
.993
.003
26.65
IR1(nA)
Vr=250V
3.88
8.97
6.63
1.45
22938.97
IR2(nA)
Vr=200V
3.54
9.63
6.26
1.64
18.99
BCX17LT1
PARM.
CNDT.
Bvces
Bvceo
(V)
(V)
Ic=10uA Ic=10mA
MIN
MAX
AVG
S.Dv
CPK
80.5
89.8
85.0
2.47
4.73
70.5
73.6
71.4
.77
11.48
Iebo
(nA)
Veb=5V
Icbo
Vce
Vbe
Hfe1 Hfe2
(nA)
(sat)(V) (on)(V)
Vce=20V 500mA/
1V/
1V/
1V/
50mA
500mA
100mA
300mA
3.01
4.74
.228
.887
272 180.0
3.97
9.80
.280
.931
299 201.0
3.46
6.73
.239
.894
286 192.1
1.88
1.46
.010
.008
6.6
5.14
17747.98 226.03
13.27
12.11 12.54 7.90
Hfe3
1V/
50mA
77.1
97.2
88.0
4.83
3.31
BCX19LT1
PARM.
CNDT.
MIN
MAX
Avrg
S.Dev
CPK
Bvces
Bvceo
(V)
(V)
Ic=10uA Ic=10mA
150
158
154
1.86
18.63
65.1
72.1
70.8
1.55
5.54
Iebo Icbo
Vce
Vbe
Hfe1
Hfe2
Hfe3
(nA0) (nA)
(sat)(V) (on)(V)
Veb=5V Vce=20V 500mA/
1V/
1V/
1V/
1V/
50mA
500mA
100mA
300mA
50mA
3.48
5.60
.187
.877
154
121
80.9
8.44
7.78
.283
.960
175
144
96.3
4.20
5.38
.199
.886
160
126
84.4
9.18
1.72
.0019
.016
5.4
5.45
3.65
3396
18.88
7.48
6.50
15.43
3.46
4.06
MMBTA92LT1
PARM.
Bvceo Bvcbo
(V)
(V)
CNDT.
Ie=
Ic=
V/10mA 10V/30mA
100uA
100uA
Min
7.43
432
Max
7.46
451
Avrg
7.45
445
S.Dv
.008
6.68
CPK
98.21
7.23
Bvceo
(V)
Ic=
Iebo
(nA)
Veb=
1mA
3v
423
.59
452
1.27
444
.90
10.23 .16
4.67 204.91
Icbo
(nA)
Vce=
Vce
Vbe
(sat)(V) (sat)(V)
20mA/
2mA
200V
7.14
32.8
22.1
13.9
5.45
2mA
.127
.146
.139
.006
18.74
2mA
.766
.769
.768
.001
57.78
Hfe1
Hfe2
20mA/
1mA
154
162
157
2.23
19.75
Hfe3
2mA 10V/1mA 10
10mA 30
151 147
158 155
153 151
2.31 2.21
16.39 18.88
CHANGED PART IDENTIFICATION:
For site identification purpose, the date code character will
be rotated 90 degrees counterclockwise and have a bar on the
top with respect to the device marking.
Selected sample builds are available after ww02 and complete
samples will be after ww06, 2001. Customers may receive these
products manufactured starting with data code 0106 or later.
Issue Date: 27 December, 2000
Page 3 of 4
Product/Process Change Notification #10542
AFFECTED DEVICE LIST:
PART
BAS16LT1
BAS21LT1
BAV70LT1
BAV99LT1
BAV99LT3
BAW56LT1
BC807-25LT1
BC807-40LT1
BC817-25LT1
BC817-40LT1
BC846BLT1
BC847BLT1
BC847BLT3
BC847CLT1
BC847CLT3
BC848BLT1
BC848CLT1
BC856BLT1
BC857BLT1
BC857BLT3
BC858BLT1
BC858CLT1
MMBD6050LT1
MMBD7000LT1
MMBD914LT1
MMBD914LT3
MMBT2222ALT1
MMBT2222ALT3
MMBT2222LT1
MMBT2907ALT1
MMBT2907ALT3
MMBT3904LT1
MMBT3904LT3
MMBT3906LT1
MMBT3906LT3
MMBT4401LT1
MMBT4403LT1
MMBT5551LT1
MMBTA06LT1
MMBTA06LT3
MMBTA42LT1
MMBTA56LT1
MMBTA92LT1
Issue Date: 27 December, 2000
Page 4 of 4