INFRARED DETECTOR MCT photoconductive detector P3257/P3981/P2750 series Non-cooled type and TE-cooled type suitable for long, continuous operation Features Applications l Choice of spectral response (up to 12 µm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics. l Photoconductive element that decreases its resistance by input of infrared light l Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area size and number of element. l Easy-to-use infrared detector modules with preamp available l Radiation thermometer l Gas analyzer l Infrared spectrophotometer l FTIR l CO2 laser monitor Accessories (Optional) l Heatsink for two-stage TE-cooler A3179-01 (Can also be used with P3257-31) l Heatsink for three-stage TE-cooler A3179-04 l Temperature controller C1103-05 (-25 to -75 ˚C) C1103-07 (20 to -30 ˚C) l Preamp C5185-01 (P3981/P2750 series) (Preamp for P3257-30/-31 available upon request) l Infrared detector modules with preamp P4631-10 (P3257-31) P4631 (P3981) P4631-04 (P2750) ■ G eneral ratings / Absolute m axim um ratings Type N o. D im e nsiona l outline / W indow m a terial * 1 Package C ooling A ctive area (m m ) w ith BN C c onnec tor N on-cooled O n e -s ta g e TO -8 P 3257-31 ➁ /S e T E -c o o le d ➁ /S TO -8 P 3981 1 × 1 T w o -s ta g e TO -66 P 3981-01 ➂ /S T E -c o o le d ➁ /S TO -8 P 2750-08 T h re e -s ta g e P 2750 TO -3 ➃ /S T E -c o o le d 0 .2 5 × 0 .2 5 P 2750-06 *1: W indow m aterial S : S apphire glass S e: ZnS e P 3257-30 ➀ /S e A bsolute m axim um ratings Therm istor TE -cooler O perating S torage A llowable power allowable tem perature tem perature current dissipation current Topr Tstg (m W ) (A ) (m A ) (°C ) (°C ) 50 1.5 50 1.0 3 3 6 6 3 0.2 -40 to +60 -55 to +60 ■ E lectrical and optical characteristics (Typ. unless otherw ise noted) Type N o. M easure m e nt P eak P hoto condition C ut-off sensitivity sensitivity * 2 wavelength E le m e n t wavelength S λc te m p e ra tu re λp λ=λp * 3 T (°C ) 25 0 (µ m ) 6.5 7.0 (µ m ) 11.0 11.5 (V /W ) 2 × 10 -3 5 × 10 -3 D∗ (500, 1200, 1) * 4 (λp D∗ 1200, 1) *3, NEP λ=λp * 3 M in. Typ. (cm ·H z 1/2 /W ) (cm ·H z 1/2 /W ) (cm ·H z 1/2 /W ) (W /H z 1/2 ) 5.0 × 10 5 3.0 × 10 6 2.0 × 10 5 5.0 × 10 -7 6 6 5 1.0 × 10 6.0 × 10 5.0 × 10 2.0 × 10 -7 P 3257-30 P 3257-31 P 3981 3.6 4.3 1 × 10 4 5.0 × 10 8 5.0 × 10 9 1.3 × 10 11 -30 P 3981-01 2 P 2750-08 3.0 × 10 8 3.0 × 10 9 1.5 × 10 10 4.8 5.4 3 × 10 3 P 2750 2 × 10 -60 4.8 5.5 1.0 × 10 9 9.0 × 10 9 4.5 × 10 10 3 × 10 3 P 2750-06 *2: P hoto sensitivity changes with the bias current. The values in the above table are m easured *3: P 3257-30/-31: λ=10.6 µm *4: P 3257-30/-31: (800, 1200, 1) 7.7 × 10 -13 D a rk R ise tim e re sis ta n c e tr 0 to 63 % Rd (µ s) 1 (ns) 1 (ns) (Ω ) 30 35 10 600 10 -12 6.7 × 2 160 2.2 × 10 -12 3 200 5.0 × 10 -13 with the optim um bias current. 1 MCT photoconductive detector P3257/P3981/P2750 series ■ Spectral response P3257-30/-31 10 7 10 6 10 5 P3257-30 (T=25 ˚C) (Typ.) 12 10 D* (λ, 1200, 1) (cm · Hz1/2/W) P3257-31 (T=0 ˚C) 1 D* (λ, 1200, 1) (cm · Hz2 /W) 10 P3981/-01 (Typ.) 8 T= -30 ˚C 11 10 10 10 T=0 ˚C 9 10 2 3 4 5 6 7 8 9 10 11 2 12 3 4 5 WAVELENGTH (µm) WAVELENGTH (µm) KIRDB0164EC ■ D* vs. element temperature P2750/-06/-08 10 KIRDB0066EC (Typ.) 11 (Typ.) 1011 P3981 P2750 1 D* (λ, 1200, 1) (cm · Hz 2 /W) D* (λ, 1200, 1) (cm · Hz1/2/W) P2750/-06 (T= -60 ˚C) 10 10 P2750-08 (T= -30 ˚C) 109 108 2 3 4 5 10 10 109 108 -80 6 WAVELENGTH (µm) -60 -40 -20 0 20 40 ELEMENT TEMPERATURE (˚C) KIRDB0068EC ■ S/N vs. bias current (P2750) KIRDB0174EA ■ Cooling characteristics of TE-cooler (Typ.) 10 [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooled), 1.2 ˚C/W (three-stage TE-cooled)] 40 D* ELEMENT TEMPERATURE (˚C) 9 RELATIVE VALUE 8 7 S 6 5 4 3 N 2 1 0 0 1 2 3 4 5 CURRENT (mA) 2 TWO-STAGE TE-COOLED TYPE (TO-8) 0 -20 -40 -60 THREE-STAGE TE-COOLED TYPE -80 0 0.4 TWO-STAGE TE-COOLED TYPE (TO-66) 0.8 1.2 1.6 CURRENT (A) KIRDB0070EC The detector must be operated in a range where the D* becomes Max. ONE-STAGE TE-COOLED TYPE 20 KIRDB0175EA MCT photoconductive detector ■ Current vs. voltage of TE-cooler P3257/P3981/P2750 series ■ Thermistor temperature characteristic [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler), 1.2 ˚C/W (three-stage TE-cooler)] 1.6 (Typ.) 1 MΩ 1.4 CURRENT (A) SENSOR RESISTANCE ONE-STAGE TE-COOLED TYPE 1.2 1.0 0.8 0.6 THREE-STAGE TE-COOLED TYPE 0.4 10 kΩ TWO-STAGE TE-COOLED TYPE 0.2 0.0 100 kΩ 0 1.0 0.5 1.5 2.0 1 kΩ -80 2.5 VOLTAGE (V) -60 -40 -20 0 20 40 ELEMENT TEMPERATURE (˚C) KIRDB0176EC KIRDB0071EB ■ Measurement circuit CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER DETECTOR BLACK BODY 500 K fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 KIRDC0005EA ■ Connection example (P3981) CABLE (SUPPLIED WITH C5185) BNC CONNECTOR CABLE (SOLD SEPARATELY) C4696 P3981 + A3179-01 DETECTOR & HEATSINK CHOPPER BNC CONNECTOR CABLE (SOLD SEPARATELY) POWER SUPPLY FOR AMP C5185-01 C1103-05 AMP LOCK-IN AMP OR SPECTRUM ANALYZER SIGNAL PROCESSING CIRCUIT TEMPERATURE CONTROLLER CABLE (SUPPLIED WITH C1103-05) Connect C1103-05 and power supply ground wires together. KIRDC0006EB 3 MCT photoconductive detector P3257/P3981/P2750 series ■ Dimensional outlines (unit: mm) ➀ P3257-30 ➁ P3257-31, P3981, P2750-08 15.3 ± 0.2 54.0 41.2 20 14 ± 0.2 WINDOW 10 ± 0.2 a 20 11.7 9.0 10 ± 0.2 5 1.3 PHOTOSENSITIVE SURFACE BNC CONNECTOR KIRDA0121EA 12 MIN. PHOTOSENSITIVE SURFACE 5.0 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR P3257-31 P3981, P2750-08 a 5.1 ± 0.2 5.2 ± 0.2 6.6 ± 0.2 KIRDA0122EA ➂ P3981-01 ➃ P2750/-06 39 ± 0.2 24.4 ± 0.2 30.1 ± 0.1 11.6 ± 0.2 2.0 1.0 LEAD PUMP-OUT PIPE PUMP-OUT PIPE 5 MAX. 9 ± 0.2 40˚ 40˚ 40˚ 12.7 ± 0.2 THERMISTOR DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) TE-COOLER (+) DETECTOR THERMISTOR PUMP-OUT PIPE NC TE-COOLER (-) 40˚ 40˚ 36˚ 5.0 ± 0.2 11 ± 0.5 9±1 25 MAX. 1.6 ± 0.1 3.5 MAX. 19.4 ± 0.2 PHOTOSENSITIVE WINDOW 10 ± 0.2 SURFACE 12 ± 1 14 ± 0.1 WINDOW 10 ± 0.1 PHOTOSENSITIVE SURFACE 5.1 ± 0.2 4 25 MAX. 3.7 25.4 ± 0.2 17 ± 0.4 32 MAX. KIRDA0123EB KIRDA0045ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1025E09 4 Jul. 2007 DN