LED - Chip ELС-630-21 Preliminary 10.04.2007 rev. 01/07 Radiation Type Technology Electrodes Red MQW AlInGaP/Si N (cathode) up typ. dimensions in µm (±25 µm) 1070 typ. thickness 225 (±25) µm 1070 cathode gold alloy, 1.0 µm anode gold alloy, 1.5 µm Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.3 V Forward voltage IF = 20 mA VF 1.8 Forward voltage2 IF = 350 mA VF 2.4 Reverse voltage IR = 10 µA VR 10 Radiant power1 IF = 20 mA Φe 4.1 Radiant power2 IF = 350 mA Φe Luminous intensity1 IF = 20 mA IV Luminous intensity2 IF = 350 mA IV Peak wavelength1 IF = 20 mA λP Dominant wavelength2 IF = 350 mA λD 622 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 18 nm Switching time IF = 20 mA tr, tf 70/35 ns 270 620 V V 5.4 mW 100 mW 350 mcd 6500 mcd 630 640 nm 1 Measured on bare chip on TO-18 header Measured on bare chip on Cu-carrier, 10s current flow (information only) 2 Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-630-21 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1