AMS2301A DESCRIPTION AMS2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source -20V/-3.2A, RDS(ON) =85mΩ (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 100mΩ @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS2301A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -3.2 -2.0 A IDM -10 A IS -1.6 A PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS2301A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -20 VGS(th) VDS=VGS,ID=-250uA -0.45 Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Parameter Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V -1.5 V VDS=0V,VGS=±12V ±100 nA VDS=-20V,VGS=0V -1 VDS=-20V,VGS=0V TJ=55℃ -10 uA Drain-source On-Resistance RDS(on) VGS=-2.5V,ID=-2.0A VGS=-4.5V,ID=-3.2A 0.100 0.085 Ω Forward Transconductance gfs VDS=-5V,ID=-2.8V 6.5 S Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 5.8 10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=-6V VGS=-4.5V ID≡-2.8A VDS=-6V VGS=0V F=1MHz Crss VDD=-6V RL=6Ω ID=-1A VGEN=-4.5V RG=6Ω tr td(off) tf 3 Advanced Monolithic Systems http://www.ams-semitech.com 0.85 nC 1.7 415 223 pF 87 13 25 36 60 42 70 34 60 nS AMS2301A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS2301A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS2301A SOT-23 PACKAGE OUTLINE 6 Advanced Monolithic Systems http://www.ams-semitech.com