CPH3356 Ordering number : ENA1124A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3356 General-Purpose Switching Device Applications Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --2.5 A --10 A Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3356-TL-H 0.6 2.9 0.15 Packing Type: TL LOT No. WN 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 61312 TKIM/N3011PE TKIM TC-00002675 No. A1124-1/7 CPH3356 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V Ratings min typ Unit max --20 V --1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1A 2.7 RDS(on)1 ID=--1A, VGS=--4.5V 105 137 mΩ RDS(on)2 ID=--0.5A, VGS=--2.5V 145 203 mΩ RDS(on)3 ID=--0.1A, VGS=--1.8V 215 323 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --0.4 --1.4 V S 250 pF 60 pF Crss 45 pF Turn-ON Delay Time td(on) 5.7 ns Rise Time tr td(off) 11 ns 34 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--2.5A 20 ns 3.3 nC 0.65 nC 0.72 IS=--2.5A, VGS=0V --0.87 nC --1.5 V Switching Time Test Circuit 0V --4.5V VIN VDD= --10V ID= --1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G CPH3356 P.G 50Ω S Ordering Information Device CPH3356-TL-H Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A1124-2/7 CPH3356 ID -- VDS 8V VGS= --1.5V --0.8 --0.6 --0.4 --1.5 5°C --25 °C --1.0 --2.0 --1.0 Ta= 7 --1.2 Drain Current, ID -- A --8.0V --3. 5 --1.4 VDS= --10V --2.5 V --1.6 ID -- VGS --3.0 --1. --4.5V --1.8 Drain Current, ID -- A --2.5 V --2.0 °C --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.1A 400 --0.5A --1.0A 200 100 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V .5A = --0 .5V, I D 2 -= VGS .0A I = --1 --4.5V, D V GS= 150 100 50 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14880 IS -- VSD 5 VGS=0V 3 2 2 = Ta 1.0 °C 25 -- °C 75 7 °C 25 5 3 --1.0 7 5 3 2 --0.1 7 5 25°C --25° C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S = VGS 200 = --0 V, I D --1.8 3 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 td(off) tf 10 tr 7 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4.5V --1.2 IT14882 f=1MHz 7 5 Ciss, Coss, Crss -- pF 2 0 IT14881 3 td(on) 5 3 Ciss 2 100 Coss 7 5 Crss 3 2 3 2 --0.1 --0.01 5 SW Time -- ID 7 Switching Time, SW Time -- ns --2.0 IT14878 .1A 0 --60 --40 --10 VDS= --10V 5 250 IT14879 | yfs | -- ID 7 --1.5 RDS(on) -- Ta Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 0 --1.0 300 600 0 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 300 0 IT14877 RDS(on) -- VGS 700 0 --1.0 25 --0.2 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 IT14883 10 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14884 No. A1124-3/7 CPH3356 VGS -- Qg --100 7 5 3 2 VDS= --10V ID= --2.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.2 3.0 3.5 IT16663 --10 7 5 3 2 ASO IDP= --10A (PW≤10μs) 10 1m 0μs 10 s ms 10 0m DC s op er ati on Operation in this area is limited by RDS(on). ID= --2.5A --1.0 7 5 3 2 --0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16664 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16665 No. A1124-4/7 CPH3356 Embossed Taping Specification CPH3356-TL-H No. A1124-5/7 CPH3356 Outline Drawing CPH3356-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1124-6/7 CPH3356 Note on usage : Since the CPH3356 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1124-7/7