SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) Ron = 46mΩ (max) (@VGS = -4.5 V) Unit: mm +0.2 2.8-0.3 Drain power dissipation V V VGSS ±8 ID (Note 1) -5.2 Pulse IDP (Note 1) -10.4 PD (Note 2) 700 t=10s 1250 0.4±0.1 ３ A mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TSM 0.16±0.05 -20 ２ 0.15 VDSS 0.95 Unit DC Gate-Source voltage Drain current Rating 0～0.1 Drain-Source voltage Symbol 1.9±0.2 Characteristic １ 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.95 +0.2 1.6-0.1 2.9±0.2 • • 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ.) Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) 3 3 KFA 1 2 1 2 1 2008-10-20 SSM3J321T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V ⏐Yfs⏐ VDS = -3 V, ID = -3.0 A (Note 3) 6.1 12.2 ⎯ S ID = -3.0 A, VGS = -4.5 V (Note 3) ⎯ 37 46 ID = -2.0 A, VGS = -2.5 V (Note 3) ⎯ 48 62 ID = -1.0 A, VGS = -1.8 V (Note 3) ⎯ 63 88 ID = -0.3 A, VGS = -1.5 V (Note 3) ⎯ 78 137 ⎯ 640 ⎯ ⎯ 140 ⎯ ⎯ 100 ⎯ ⎯ 8.1 ⎯ ⎯ 6.4 ⎯ ⎯ 1.7 ⎯ Drain-Source breakdown voltage Gate threshold voltage Forward transfer admittance Drain–source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = −10 V, ID = −4.6 A VGS = −4.5 V Turn-on time ton VDD = -10 V, ID = -2.0 A, ⎯ 32 ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 102 ⎯ ⎯ 0.86 1.2 VDSF Drain-Source forward voltage ID = 5.2 A, VGS = 0 V (Note 3) V mΩ pF nC ns V Note3: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 10% OUT 0 IN 90% −2.5 V RG −2.5V 10 μs RL VDD (c) VOUT VDD = − 10 V RG = 4.7 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-10-20 SSM3J321T ID – VDS -4.5 V ID – VGS -10000 -1.8 V -2.5 V Common Source VDS = -3 V -1000 (mA) -8 -100 ID -1.5 V -6 -10 Drain current Drain current ID (A) -10 -4 VGS = -1.2 V -2 Ta = 100 °C −25 °C -1 25 °C -0.1 0 Common Source Ta = 25 °C 0 -0.2 -0.6 -0.4 Drain–source voltage -0.8 VDS -0.01 -1 0 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 120 100 80 25 °C Ta = 100 °C 40 0 -2 -4 -6 Gate–source voltage VGS Common Source 140 120 100 80 25 °C 60 Ta = 100 °C 40 20 −25 °C 0 0 -8 −25 °C 0 -2 (V) 100 -1.8 V -2.5 V -4.5 V -2 VGS -8 (V) Common Source ID = -0.3 A / VGS = -1.5 V Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) Common Source Ta = 25°C 0 -6 RDS (ON) – Ta 120 VGS = -1.5 V 0 -4 Gate–source voltage RDS (ON) – ID 200 (V) ID = -3.0 A 160 140 20 -2.0 RDS (ON) – VGS Common Source 60 VGS 180 ID = -0.3 A 160 -1.5 Gate–source voltage RDS (ON) – VGS 180 -1.0 -0.5 (V) -4 Drain current -6 ID -8 100 80 (A) -2.0 A / -2.5 V 60 40 -3.0 A / -4.5 V 20 0 −50 -10 -1.0 A / -1.8 V 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-10-20 SSM3J321T Vth – Ta ID = -1 mA -0.8 (S) VDS = -3 V 30 10 Forward transfer admittance Gate threshold voltage Vth (V) Common Source ⎪Yfs⎪ |Yfs| – ID -1.0 -0.6 -0.4 -0.2 0 −50 50 0 100 Ambient temperature Ta 150 Common Source VDS = -3 V Ta = 25 °C 3 1 0.3 0.1 0.03 0.01 -10000 -1000 Drain current (°C) C – VDS 5000 -100 -10 1 ID (mA) Dynamic Input Characteristic -8 VGS 1000 Ciss 500 Gate–source voltage Capacitance C (pF) (V) 3000 300 Coss 100 50 30 Crss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain–source voltage VDD = -10 V -4 VDD = -16 V -2 Common Source ID = -4.6 A Ta = 25 °C 0 -100 VDS -6 0 5 Total Gate Charge (V) t – ID tf (A) Drain reverse current Switching time t 100 ton 10 tr (nC) D IDR 1 G S 0.1 0.01 100 °C 0.001 25 °C Drain current Qg Common Source VGS = 0 V Ta = 25 °C IDR toff (ns) 10 Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7 Ω -0.1 15 IDR – VDS 1000 1 -0.01 10 -1 ID 0.0001 0 -10 0.2 0.4 −25 °C 0.6 Drain–source voltage (A) 4 0.8 VDS 1.0 1.2 (V) 2008-10-20 SSM3J321T rth PD – Ta – tw 1000 Drain power dissipation PD (mW) Transient thermal impedance rth (°C/W) 1000 b 100 a 10 1 0.001 a: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.8 mm2×3) 0.01 0.1 1 Pulse width 10 tw 100 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.8 mm2×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2008-10-20 SSM3J321T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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