Product Overview CPH3360: Power MOSFET, -30V, 303mΩ , -1.6A, Single P-Channel For complete documentation, see the data sheet Product Description This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • • • • Benefits High speed switching and Low loss Small package CPH3 (2.9mm x 2.8mm x 0.9mmt) Pb-Free,Halogen Free and RoHS Compliance 4V drive • Realize high efficiency of applications • Small and slim applied set • Environmental consideration Applications End Products • DC/DC Convertor • Load switch • Game Part Electrical Specifications Product CPH3360-TL-W Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on PSin Cha gle nne l -30 VGS Ma x (V) VGS 20 -2.6 -1.6 0.9 (th) Ma x (V) ID Ma x (A) PD Ma x (W) rDS( rDS( rDS( on) on) on) 532 303 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 2.2 0.4 9 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 82 22 16 CP H-3