FAIRCHILD FDZ1905PZ

FDZ1905PZ
tm
Common Drain P-Channel 1.5V
PowerTrench® WL-CSP
MOSFET
–20V, –3A, 123mΩ
Features
General Description
„ Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two common drain
P-channel MOSFETs, which enables bidirectional current flow,
on Fairchild’s advanced 1.5V PowerTrench® process with state
of the art “low pitch” WL-CSP packaging process, the
FDZ1905PZ minimizes both PCB space and rS1S2(on). This
advanced WL-CSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rS1S2(on) .
„ High power and current handling capability
Applications
„ HBM ESD protection level > 4kV (Note 3)
„ Battery management
„ RoHS Compliant
„ Load switch
„ Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A
„ Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A
„ Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A
„ Occupies only 1.5 mm2 of PCB area, less than 50% of the
area of 2 x 2 BGA
„ Battery protection
S1
PIN1
S1
G2
G1
G1
S1
S2
S2
G2
TOP
BOTTOM
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
Source1 to Source2 Voltage
Parameter
VGS
Gate to Source Voltage
IS1S2
Source1 to Source2 Current
-Continuous
TA = 25°C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
–20
Units
V
±8
V
–3
–15
Power Dissipation (Steady State)
TA = 25°C
(Note 1a)
1.5
Power Dissipation
TA = 25°C
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
–55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
83
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
140
°C/W
Package Marking and Ordering Information
Device Marking
5
Device
FDZ1905PZ
©2008 Fairchild Semiconductor Corporation
FDZ1905PZ Rev.B
Package
WL-CSP 1.0X1.5
1
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
www.fairchildsemi.com
FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
July 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
IS1S2
Zero Gate Voltage Source1 to Source2
Current
VS1S2 = –16V, VGS = 0V
–1
µA
IGSS
Gate Body Leakage Current
VGS = ±8V, VS1S2 = 0V
±10
uA
–0.7
–1.0
V
99
126
VGS = –2.5V, IS1S2 = –1A
112
141
VGS = –1.8V, IS1S2 = –1A
132
198
VGS = –1.5V, IS1S2 = –1A
164
303
VGS = –4.5V, IS1S2 = –1A,
TJ = 125°C
135
195
VS1S2 = –5V, IS1S2 = –1A
8
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VS1S2, IS1S2 = -250µA
VGS = –4.5V, IS1S2 = –1A
rS1S2(on)
gFS
Static Source1 to Source2 On Resistance
Forward Transconductance
–0.4
mΩ
S
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VS1S2 = –10V, IS1S2 = –1A
VGS = –4.5V, RGEN = 6Ω
12
22
ns
36
58
ns
143
229
ns
182
291
ns
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 83°C/W when mounted on a
1 in2 pad of 2 oz copper
b.140°C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
FDZ1905PZ Rev.B
2
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FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
15
-IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
-IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
15
VG2S2 = -4.5V
VG2S2 = -3.0V
12
VG2S2 = -2.5V
9
VG2S2 = -1.8V
6
VG2S2 = -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VG1S1 = -4.5V
3
0
0
1
2
3
-VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
VGS = -4.5V
VGS = -1.8V
6
VGS = -1.5V
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VG1S1 = -4.5V
2.0
VG2S2 = -1.8V
1.5
VG2S2 = -2.5V
1.0
VG2S2 = -4.5V
VG2S2 = -3.0V
0.5
0
3
6
9
12
1
15
2.0
VGS = -2.5V
VGS = -1.8V
1.5
VGS = -3.0V
1.0
0.5
0
3
6
9
12
15
500
rS1S2(on), SOURCE1 TO
IS1S2 = -1A
VGS = -4.5V
1.0
0.8
0
25
50
75
100
125
SOURCE2 ON-RESISTANCE (mΩ)
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
VGS = -4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
Figure 4. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
400
IS1S2 = -1A
300
TJ = 125oC
200
100
TJ = 25oC
0
1.0
150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Normalized On Resistance
vs Junction Temperature
FDZ1905PZ Rev.B
5
-IS1S2, SOURCE1 TO SOURCE2 CURRENT(A)
1.6
-25
4
VGS = -1.5V
Figure 3. Normalized On-Resistance
vs Drain Current and Gate Voltage
0.6
-50
3
2.5
-IS1S2, SOURCE1 TO SOURCE2 CURRENT(A)
1.4
2
-VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 2. On Region Characteristics
3.0
VG2S2 = -1.5V
VGS = -2.5V
9
Figure 1. On Region Characteristics
2.5
VGS = -3.0V
12
Figure 6. On-Resistance vs Gate to
Source Voltage
3
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FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-3
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-IG, GATE LEAKAGE CURRENT(A)
-IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
15
12
VS1S2 = -5V
9
6
TJ = 150oC
TJ = 25oC
3
TJ = -55oC
VGS = 0V
-4
10
-5
10
TJ = 150oC
-6
10
-7
10
TJ = 25oC
-8
10
-9
0
0.0
0.5
1.0
1.5
2.0
10
2.5
0
3
-VGS, GATE TO SOURCE VOLTAGE (V)
6
9
12
15
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 7. Transfer Characteristics
Figure 8. Gate Leakage vs Gate to
Source Voltage
2
P(PK), PEAK TRANSIENT POWER (W)
-IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
10
20
10
100us
1ms
1
0.1
SINGLE PULSE
TJ = MAX RATED
10ms
RθJA = 140oC/W
100ms
1s
TA = 25oC
10s
DC
THIS AREA IS
LIMITED BY rS1S2(on)
0.01
0.1
1
SINGLE PULSE
RθJA = 140oC/W
1
10
TA = 25oC
0
10
-1
10
-4
10
60
10
VGS = -4.5V
-3
-2
10
10
-1
10
0
1
10
10
100
1000
t, PULSE WIDTH (sec)
-VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 140 C/W
0.01
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
FDZ1905PZ Rev.B
4
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FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
www.fairchildsemi.com
5
FDZ1905PZ Rev.B
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As used herein:
1.
2.
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properly used in accordance with instructions for use provided
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
FDZ1905PZ Rev.B
6
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FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
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