PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime and reliability. PTF080601F* Package 31265 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz 55 -10 -20 50 Efficiency TCASE = 25°C TCASE = 90°C 45 40 -30 35 -40 30 -50 25 400 kHz -60 20 -70 15 -80 Drain Efficiency (%) Modulation Spectrum (dB) 0 Features 10 600 kHz -90 5 32 34 36 38 40 42 44 46 48 Output Power (dBm) • Thermally-enhanced packaging • Broadband internal matching • Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Output power at P–1dB = 90 W - Gain = 17 dB - Efficiency = 60% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, P OUT = 30 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Units EVM (RMS) — 2.0 — % Modulation Spectrum @ 400 KHz ACPR — –61 — dBc Modulation Spectrum @ 600 KHz ACPR — –74 — dBc Gps — 18 — dB ηD — 40 — % Error Vector Magnitude Gain Drain Efficiency *See Infineon distributor for future availability. Data Sheet 1 of 10 2004-08-03 PTF080601E PTF080601F RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gps 17 18 — dB Drain Efficiency ηD 38 40 — % Intermodulation Distortion IMD — –32 –30 dBc Gain DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS — 3.0 — V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 227 W 1.3 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.77 °C/W Ordering Information Type PTF080601E PTF080601F* Package Outline 30265 31265 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTF080601E PTF080601F *See Infineon distributor for future availability. Data Sheet 2 of 10 2004-08-03 PTF080601E PTF080601F Typical Performance (measurements taken in production test fixture) Modulation Spectrum EDGE EVM Performance P OUT = 30 W, f = 959.8 MHz V DD = 28 V, IDQ = 550 mA, f = 959.8 MHz -40 1.5 -50 -60 1.3 400 KHz 0.9 -70 -80 600 KHz -90 0.7 0.5 0.40 0.45 0.50 0.55 45 6 40 5 35 Efficiency 4 30 3 25 2 20 EVM 1 15 0 -100 0.65 0.60 7 10 32 34 36 Quiescent Current (A) 38 40 42 44 46 48 Output Power (dBm) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 550 mA, f1 = 959 MHz, f2 = 960 MHz V DD = 28 V, IDQ = 550 mA -25 19 -30 3rd Order 18 80 Gain 70 -40 Gain (dB) IMD (dBc) -35 -45 -50 5th 17 Efficiency 16 15 Output Power -55 7th -60 38 50 14 -65 36 60 40 42 44 46 48 13 860 50 880 900 920 940 Efficiency (%), POUT (dBm) 1.1 50 TCASE = 25°C TCASE = 90°C Drain Efficiency (%) -30 EVM EVM RMS (average %) . 1.9 1.7 8 -20 Modulation Spectrum (dBc) EVM RMS (average %) . 2.1 40 960 Frequency (MHz) Output Power (dBm), PEP All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 3 of 10 2004-08-03 PTF080601E PTF080601F Typical Performance (cont.) IM3 vs. Output Power at Selected Biases Broadband Performance VDD = 28 V, f1 = 959, f2 = 960 MHz V DD = 28 V, IDQ = 550 mA, POUT = 15 W 30 -36 480 mA -40 550 mA -44 -48 Efficiency 26 22 -7 Gain 18 -10 14 -13 Return Loss 620 mA 10 820 -52 36 38 40 42 44 46 48 50 850 880 910 940 970 -16 1000 Output Power (dBm), PEP Frequency (MHz) Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 550 mA, f = 960 MHz V DD = 28 V, IDQ = 550 mA, f = 960 MHz 20.0 70 20 19.5 IDQ = 620 mA 19 19.0 18.5 Gain (dB) Power Gain (dB) -4 18.0 17.5 IDQ = 550 mA 17.0 IDQ = 480 mA 16.5 16.0 60 Gain 18 50 17 40 16 30 15 15.5 Return Loss (dB) IMD (dBc) -32 -1 Drain Efficiency (%) Gain (dB), Efficiency (%) -28 20 Efficiency 15.0 14 37 39 41 43 45 47 49 51 Output Power (dBm) Data Sheet 10 37 39 41 43 45 47 49 51 Output Power (dBm) 4 of 10 2004-08-03 PTF080601E PTF080601F Typical Performance (cont.) Output Power (at 1 dB Compression) vs. Supply Voltage IS-95 CDMA Performance V DD = 28 V, IDQ = 550 mA, f = 880 MHz 40 50.5 35 50.0 49.5 49.0 48.5 48.0 47.5 TCASE = 25°C TCASE = 90°C -45 30 ACPR f C – 0.75 MHz -50 25 -55 -60 20 Efficiency 15 -65 -70 10 5 47.0 -75 ALT f C + 1.98 MHz -80 0 24 26 28 30 32 30 32 Supply Voltage (V) ACPR Low ACPR Up -50 ALT Up 35 -53 -56 Efficiency 25 -59 20 -62 15 Normalized Bias Voltage 40 Adjacent Channel Power Ratio (dBc) -47 ACPR 30 -65 39 40 41 42 43 40 42 44 1.03 0.40 A 1.02 1.50 A 1.01 2.60 A 3.80 A 1.00 4.95 A 0.99 6.00 A 0.98 0.97 0.96 0.95 -20 44 Output Power (dBm), Avg. Data Sheet 38 Voltage normalized to typical gate voltage, series show current. -44 45 36 Gate-Source Voltage vs. Temperature VDD = 28 V, IDQ = 550 mA, f = 880 MHz 50 34 Output Power (dBm), Avg. Three-Carrier CDMA 2000 Performance Drain Efficiency (%) -40 Adjacent Channel Power Ratio (dBc) 51.0 Drain Efficiency (%) Output Power (dBm) IDQ = 550 mA, f = 960 MHz 0 20 40 60 80 100 Case Temperature (ºC) 5 of 10 2004-08-03 PTF080601E PTF080601F OW A R D GE NE R AT Broadband Circuit Impedance Z Source Z Load 0 .1 D Z0 = 50 Ω Z Load G 980 MHz Z Source Ω Z Load Ω MHz R jX R jX 860 7.45 –3.79 2.74 –0.42 920 7.76 –2.65 2.55 0.78 940 7.95 –2.31 2.50 1.00 960 8.15 –1.95 2.48 1.28 980 8.42 –1.62 2.48 1.46 0.2 0.1 0.0 860 MHz Z Source 980 MHz 860 MHz 0.1 EL E W AV Frequency D L OA D S T OW AR NGT H S See next page for Reference Circuit information Data Sheet 6 of 10 2004-08-03 PTF080601E PTF080601F Reference Circuit VDD QQ1 LM7805 C21 0.001µF C19 0.001µF R3 1.2kV R4 1.3kV Q1 BCP56 C20 0.001µF R5 10KV R1 10 V R7 5.1kV + R6 24kV C1 10µF 35V C2 0.1µF 50V L1 R2 5.1k V C3 33pF C6 33pF l + C7 1µF C8 10µF 35V + C9 0.1µF 50V VDD C10 10µF 35V l7 DUT RF_IN l1 l2 C4 33pF l3 l5 l6 C5 4.8pF l9 l10 C11 5.6pF RF_OUT l11 C13 33pF C12 0.5pF l8 L2 C14 33pF C15 1µF + C16 10µF 35V C17 0.1µF 50V + C18 10µF 35V 080601_sch Reference Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 Data Sheet PTF080601E or PTF080601F 0.76 mm [.030”] thick, εr = 4.5 Electrical Characteristics at 960 MHz LDMOS Transistor 2 oz. copper Rogers TMM4 Dimensions: L x W (mm) Dimensions: L x W (in.) 0.083 λ, 50 Ω 0.098 λ, 50 Ω 0.058 λ, 50 Ω 0.288 λ, 73.0 Ω 0.061 λ, 7.5 Ω 0.058 λ, 9.2 Ω 0.198 λ, 50 Ω 0.144 λ, 9.2 Ω 0.134 λ, 38.0 Ω 0.029 λ, 50 Ω 14.27 x 1.35 16.76 x 1.35 9.98 x 1.35 50.80 x 0.64 9.27 x 16.26 8.89 x 12.90 22.61 x 1.27 22.10 x 12.90 22.35 x 2.16 14.27 x 1.35 7 of 10 0.562 0.660 0.393 2.000 0.365 0.350 0.890 0.870 0.880 0.195 x x x x x x x x x x 0.053 0.053 0.053 0.025 0.640 0.508 0.050 0.508 0.085 0.054 2004-08-03 PTF080601E PTF080601F Reference Circuit (cont.) V DD V DD R7 3 5V R5 QQ1 R3 C20 C6 C7 Q1 L1 C2 C9 C8 C19 QQ1 R6 R4 10 35V + 10 35V R1 R2 C3 LM + R6 R4 C2 C21 C1 + 10 C21 C19 10 35V R7 C1 R5 C10 + VDD R1 R2 C3 LM R3 C20 Q1 C12 C13 RF_IN RF_OUT C4 C5 C11 C16 C14 10 35 V C17 V DD + 080601out_01 080601in_01 080601_assy_dtl C15 L2 3 5V + 10 C18 080601_assy Reference Circuit1 (not to scale) Component Description Manufacturer P/N or Comment C1, C8, C10, C16, C18 C2, C9, C17 C3, C4, C6, C13, C14 C5 C7, C15 C11 C12 C19, C20, C21 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Capacitor, 10 µF, 35 V, Digi-Key Capacitor, 0.1 µF, 50 V, 1206 Capacitor, 33 pF Digi-Key ATC PCS6106TR-ND Tant TE Series SMD P4525-ND 100B 330 Capacitor, 4.8 pF Capacitor, 1 µF, 50 V Capacitor, 5.6 pF Capacitor, 0.5 pF Capacitor, 0.001 µF, 50 V, 0603 Ferrite, 6 mm Transistor Voltage Regulator Resistor, 1 0 ohms, 1/4 W, 1206 Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Variable Resistor, 10 k-ohms, 0.25 W Resistor, 24 k-ohms, 1/10 W, 0603 Resistor, 5.1 k-ohms, 1/4 W, 1206 ATC Digi-Key ATC ATC Digi-Key Ferroxcube Infineon Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 4R8 19528-ND 100B 5R6 100B 0R5 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ACT-ND P5.1KACT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P24KGCT-ND P5.1KACT-ND 1Gerber files for this circuit are available on request. Data Sheet 8 of 10 2004-08-03 PTF080601E PTF080601F Package Outline Specifications* Package 30265 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 0.51 [.020] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower *Information not yet available for Package 31265. See your Infineon distributor for future availability. Data Sheet 9 of 10 2004-08-03 PTF080601E/F Confidential – Internal Only Revision History: 2004-08-03 2003-12-05, Preliminary Previous Version: Page Data Sheet Delete PTF080601A, change package, add circuit and other information. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International Edition 2004-08-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 2004-08-03