PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz TCASE = 25°C TCASE = 90°C -40 40 Adj 750 kHz 30 -50 20 -60 Efficiency -70 Alt1 1.98 MHz Adjacent Channel Power Ratio (dBc) Drain Efficiency (%) -30 10 -80 0 32 34 36 38 40 42 44 46 PTFA081501F Package H-31248-2 Features IS-95 CDMA Performance 50 PTFA081501E Package H-30248-2 48 Output Power (dBm), Avg. • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc • Typical CW performance, 900 MHz, 28 V - Output power at P–1dB = 165 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power RF Characteristics CDMA2000 3-Carrier Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, POUT = 35 W average, ƒ = 900 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency ηD — 34 — % ACPR — –50 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, POUT = 150 W PEP, ƒ = 900 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 44 46 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.07 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 950 mA VGS 2.0 2.48 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 449 W 2.56 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.39 °C/W Ordering Information Type Package Outline Package Description Marking PTFA081501E H-30248-2 Thermally-enhanced slotted flange, single-ended PTFA081501E PTFA081501F H-31248-2 Thermally-enhanced earless flange, single-ended PTFA081501F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Linear Broadband Performance Broadband CW Performance VDD = 28 V, IDQ = 950 mA, POUT Avg. = 48.75 dBm VDD = 28 V, IDQ = 950 mA, POUT = P–1dB 20 Gain 40 10 0 35 30 -10 Return Loss -20 25 20 864 873 882 891 19 Gain (dB) Efficiency (%) 45 70 20 30 Efficiency Gain (dB), Return Loss (dB) 50 65 Efficiency 60 18 Gain 55 17 Output Power 16 864 -30 900 870 876 888 894 50 900 Frequency (MHz) Frequency (MHz) Intermodulation Distortion vs. Output Power IM3 vs. Output Power at Selected Biases (as measured in a broadband circuit) VDD = 28 V, IDQ = 950 mA, ƒ1 = 899 MHz, ƒ2 = 900 MHz VDD = 28 V, ƒ1 = 899 MHz, ƒ2 = 900 MHz -25 -20 -30 -30 IDQ = 675 mA -35 3rd Order -40 IMD (dBc) IMD (dBc) 882 Efficiency (%), Output Power (dBm) Typical Performance (data taken in a production test fixture) -50 5th -60 IDQ = 950 mA -40 -45 -50 7th -70 -55 -80 IDQ = 1125 mA -60 35 38 41 44 47 50 36 40 42 44 46 48 50 Output Power, Avg. (dBm) Output Power, Avg. (dBm) Data Sheet 38 3 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, ƒ = 900 MHz VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz 19 IDQ = 950 mA 20 60 50 Gain 40 18 30 17 Efficiency 16 20 10 15 17 0 14 36 38 40 42 44 46 48 50 52 36 54 38 40 42 44 46 48 50 52 54 Output Power (dBm) Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage IDQ = 950 mA, ƒ = 900 MHz Three-carrier CDMA 2000 Performance VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz 54.0 50 -35 Drain Efficiency (%) 53.5 53.0 52.5 52.0 51.5 Efficiency 40 -40 30 -45 20 -50 ACP Up ACP Low 10 -55 Adj. Ch. Power Ratio (dBc) 18 IDQ = 450 mA Output Power (dBm) 70 19 Gain (dB) Power Gain (dB) IDQ = 1350 mA 21 Drain Efficiency (%) Typical Performance (cont.) ALT Up 0 51.0 24 26 28 30 Supply Voltage (V) Data Sheet -60 36 32 38 40 42 44 46 48 50 Output Power (dBm), Avg. 4 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Typical Performance (cont.) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 1.56 A Normalized Bias Voltage (V) 1.03 3.10 A 1.02 4.66 A 6.22 A 1.01 7.76 A 1.00 9.32 A 0.99 10.88 A 12.44 A 0.98 14.00 A 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G D GE S HS T O W AR R jX R jX 864 13.20 4.69 1.35 4.73 873 13.30 4.75 1.28 4.80 882 13.85 4.94 1.14 4.99 891 14.59 5.00 1.06 5.27 900 15.01 4.91 1.01 5.43 Z0 = 50 Ω 900 MHz 864 MHz Z Source 5 of 10 0 .5 0 .4 0 .3 0 .2 0 .1 0 .0 900 MHz 864 MHz AD - - W A VEL EN G T MHz Z Load 0. 1 Data Sheet Z Load Ω Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 5.1V C4 10µF 35V R6 10V L1 l5 C5 0.1µF R7 5.1K C6 0.1 µF C7 0.01 µF C8 33pF R8 10V C10 33pF RF_IN l1 l2 C13 33pF C9 2.1pF l4 l6 C11 7.5pF C12 10pF C15 10µF 50V C16 0.1µF VDD C17 10µF 50V l7 C23 7.5pF DUT l3 C14 1µF l9 l10 C24 7.5pF C26 33pF l11 l 12 C25 2.7pF l13 RF_OUT C27 0.5pF a0 8150 1ef _sch l8 L2 C18 33pF C19 1µF C20 10µF 50V C21 0.1µF C22 10µF 50V Reference circuit block diagram for ƒ = 900 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12, l13 PTFA081501E or PTFA081501F 0.76 mm [.030"] thick, εr = 4.5 Electrical Characteristics at 900 MHz1 0.016 0.053 0.102 0.045 0.153 0.058 0.125 0.036 0.141 0.149 0.013 LDMOS Transistor Rogers TMM4 2 oz. copper Dimensions: L x W (mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 68.0 Ω λ, 7.5 Ω λ, 50.0 Ω λ, 7.9 Ω λ, 7.9 Ω λ, 38.0 Ω λ, 50.0 Ω 2.90 x 1.35 9.40 x 1.35 18.29 x 1.35 8.10 x 1.35 27.43 x 0.76 9.40 x 16.26 22.61 x 1.27 5.72 x 15.24 22.61 x 15.24 26.16 x 2.16 2.29 x 1.35 0.114 0.370 0.720 0.319 1.080 0.370 0.890 0.225 0.890 1.030 0.090 x x x x x x x x x x x 0.053 0.053 0.053 0.053 0.030 0.640 0.050 0.600 0.600 0.085 0.053 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Reference Circuit (cont.) C17 R5 R4 R3 C3 C5 C4 + C1 LM 10 R1R2 35V R6 R7 C7 C6 V DD QQ1 C13 Q1 C8 V DD L1 C2 C14 R8 C16 C15 C23 C27 RF_IN RF_OUT C9 C10 C26 C11 C12 C25 C24 C21 C19 V DD L2 C18 C20 C22 a081501ef_assy Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C16, C21 C7 C8, C10, C13, C18, C26 C9 C11, C23, C24 C12 C14, C19 C15, C17, C20, C22 C25 C27 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF, 50 V Capacitor, 0.01 µF Ceramic capacitor, 33 pF Digi-Key Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND PCS6106TR-ND P4525-ND 200B 103 100B 330 Ceramic capacitor, 2.1 pF Ceramic capacitor, 7.5 pF Ceramic capacitor, 10 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 2.7 pF Ceramic capacitor, 0.5 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 5.1 k-ohms Chip resistor, 10 ohms ATC ATC ATC ATC Garrett Electronics ATC ATC Ferroxcube Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 2R1 100B 7R5 100B 100 920C105 TPS106K050R0400 100B 2R7 100B 0R5 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Package Outline Specifications Package H-30248-2 (45° X 2.72 [.107]) CL 2X 4.83±0.51 [.190±.020] D FLANGE 9.78 [.385] LID 9.40 +0.10 –0.15 19.43 ±0.51 [.370 +.004 –.006 ] [.765±.020] S C L 2X R1.63 [.064] G 2X 12.70 [.500] 4X R1.52 [.060] 27.94 [1.100] 19.81±0.20 [.780±.008] 1.02 [.040] C L SPH 1.57 [.062] 3.61±0.38 [.142±.015] 0.0381 [.0015] -A34.04 [1.340] 248-cases: h- 30248-2_po Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 03, 2007-03-09 PTFA081501E PTFA081501F Package Outline Specifications (cont.) Package H-31248-2 ( 45° X 2.72 [.107]) C L 2X 4.83±0.51 [.190±.020] D +0.10 LID 9.40 –0.15 [.370+.004 – .006 ] FLANGE 9.78 [.385] CL 19.43±0.51 [.765±.020] G 4X R0.508 +0.381 –0.127 [R.020+.015 –.005 ] 2X 12.70 [.500] 19.81±0.20 [.780±.008] C L SPH 1.57 [.062] 1.02 [.040] 0.0381 [.0015] -A- S 3.61±0.38 [.142±.015] 20.57 [.810] 248-cases:h-31248-2_po Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products *See Infineon distributor for future availability. Data Sheet 9 of 10 Rev. 03, 2007-03-09 PTFA081501E/F Confidential, Limited Internal Distribution Revision History: 2007-03-09 Previous Version: 2005-07-20, Data Sheet Page Subjects (major changes since last revision) all 1 Update Infineon information and logo. Add information about RoHS compliance. 1, 2, 9 1, 2, 8, 9 Show PTFA081501F as a released products Revise package designations and diagrams. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-03-09 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2007-03-09