PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz PTF140451E Package 30265 Description The PTF140451E and PTF140451F are 45-watt, GOLDMOS ® FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to 1550 MHz band. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features DAB Mode 2 Drive-up at 28 V VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz -22 30 • Thermally-enhanced packages • • Broadband internal matching Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 12.5 W - Efficiency = 27.5% - Spectral regrowth = –30 dBc - ∆ 975 kHz ƒC Typical DAB Mode 2 performance at 1500 MHz, 32 V - Average output power = 15.5 W - Efficiency = 27% - Spectral regrowth = –30 dBc - ∆ 975 kHz ƒC Drain Efficiency -26 26 -30 22 -34 18 -38 14 Drain Efficiency (%) Spectral Regrowth (dBc) . PTF140451F Package 31265 • Regrowth -42 • 10 34 35 36 37 38 39 40 41 42 • Output Power, avg. (dBm) • • • Typical CW performance, 1500 MHz, 28 V - Output power = 60 W - Linear gain = 18 dB - Efficiency = 54% at P–1dB Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 45 W (CW) output power Pb-free and RoHS compliant RF Characteristics DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 12.5 WAVG, ƒ = 1500 MHz, DAB Mode 2, ∆ 975 kHz ƒC Characteristic Symbol Min Typ Max Unit RGTH — –30 — dBc Gain Gp s — 18 — dB Drain Efficiency ηD — 27.5 — % Spectral Regrowth All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 45 WPEP, ƒ = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gp s 17 18 — dB Drain Efficiency ηD 35 36.5 — % Intermodulation Distortion IMD — –32 –30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.02 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VG S 2.5 3.3 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VG S –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 1.0 °C/W Ordering Information Type Package Outline Package Description Marking PTF140451E 30265 Thermally-enhanced slotted flange, single-ended PTF140451E PTF140451F 31265 Thermally-enhanced earless flange, single-ended PTF140451F *See Infineon distributor for future availability. Data Sheet 2 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F Typical Performance CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz VDD = 28 V, I DQ = 550 mA, P OUT (CW) = 12 W 50 18 40 Gain 17 30 Drain Efficiency 16 20 15 10 0 10 20 30 40 50 60 45 0 40 -10 35 -15 30 -20 25 -30 Gain 15 -40 1400 1450 1500 1550 1600 Frequency (MHz) 2-Tone Drive-up at Optimum Current VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz, tone spacing = 1 MHz VDD = 28, ƒ = 1500 MHz, tone spacing = 1 MHz -25 -25 45 IDQ = 500 mA -30 IDQ = 550 mA IDQ = 650 mA -35 35 Drain Efficiency IMD (dBc) IM3 (dBc) -35 10 3rd Order Intermodulation Distortion vs. Output Power for Various IDQ -40 -25 Drain Efficiency 20 Output Power (W) -35 -5 Return Loss -45 -50 3rd Order -45 25 5th -55 -55 15 Drain Efficiency (%) Gain (dB) 19 Drain Efficiency (%) 60 Input Return Loss (dB) TCASE = 25°C TCASE = 90°C 20 Gain (dB) and Drain Efficiency (%) . CW Power Sweep (P–1dB) 7th -60 IDQ = 450 mA IDQ = 600 mA -65 -65 32 34 36 38 40 42 44 46 Output Power, PEP (dBm) Data Sheet 5 32 48 36 40 44 48 Output Power, PEP (dBm) 3 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F Typical Performance (cont.) DAB Mode 2 Drive-up at 32 V Gate-Source Voltage vs. Temperature IDQ = 550 mA, ƒ = 1500 MHz Voltage normalized to typical gate voltage, series show current. 30 26 -30 22 -34 18 -38 14 2.00 A 1.01 36 37 38 39 40 41 42 3.75 A 0.99 4.50 A 0.98 0.97 0.96 0.95 10 35 2.85 A 1.00 Regrowth -42 1.10 A 1.02 Normalized Bias Voltage Drain Efficiency -26 0.30 A 1.03 Drain Efficiency (%) Spectral Regrowth (dBc) . -22 -20 43 0 20 40 60 80 100 Case Temperature (ºC) Output Power, avg. (dBm) Broadband Circuit Impedance Z0 = 50 Ω D Z Source Z Load 0 .1 G S 1600 MHz Z Load Z Load Ω 1600 MHz R jX R jX 1400 9.1 –2.65 4.20 –3.70 1450 9.1 –1.81 4.10 –3.50 1500 9.3 –0.98 4.10 –2.90 1550 9.5 0.15 4.00 –2.70 1600 9.9 0.60 4.00 –2.20 Data Sheet 4 of 9 1400 MHz 1400 MHz 0. 1 EN AVEL MHz W <- - - Z Source Ω Frequency 0.3 0.2 0.1 0 .0 Z Source 0.2 Rev. 02, 2005-11-01 PTF140451E PTF140451F Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V Q1 BCP56 QQ1 LM7805 VD D C2 0.001µF C3 0.001µF R4 2K V R5 10 V C4 10µF 35V R6 1KV C5 .1µF L1 R7 1KV C6 .01µF C7 33pF C10 33pF C8 33pF l1 l3 l4 C13 1µF C14 .1µF C15 22µF 50V l5 V DD l8 C17 33pF DUT l2 C12 1µF l7 R8 10V RF_IN C11 .02µF l9 l6 C9 2.1pF l10 C16 1.4pF l 11 C18 0.9pF l 12 RF_OUT 4 0 1 51 4 e f_s c h _9 -2 - 0 8 5 R3 2K V Reference circuit schematic for 1500 MHz Circuit Assembly Information DUT PTF140451E or PTF140451F PCB 0.76 mm [0.030"] thick, ε r = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 Electrical Characteristics at 1500 MHz 1 0.035 λ, 50.0 Ω 0.043 λ, 41.0 Ω 0.064 λ, 41.0 Ω 0.010 λ, 41.0 Ω 0.012 λ, 14.7 Ω 0.050 λ, 8.0 Ω 0.150 λ, 60.0 Ω 0.246 λ, 54.0 Ω 0.087 λ, 9.0 Ω 0.045 λ, 17.0 Ω 0.083 λ, 50.0 Ω 0.0113 λ, 50.0 Ω LDMOS Transistor TMM4 2 oz. copper, both sides Dimensions: L x W (mm) 3.81 x 1.47 4.60 x 1.93 6.91 x 1.93 1.04 x 1.93 1.19 x 7.62 4.90 x 15.24 16.69 x 0.97 26.85 x 1.24 8.48 x 13.46 4.57 x 6.25 9.02 x 1.52 1.22 x 1.52 Dimensions: L x W (in.) 0.150 x 0.058 0.181 x 0.076 0.272 x 0.076 0.041 x 0.076 0.047 x 0.300 0.193 x 0.600 0.657 x 0.038 1.057 x 0.049 0.334 x 0.530 0.180 x 0.246 0.355 x 0.060 0.048 x 0.060 1 Electrical Characteristics are rounded. Data Sheet 5 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F Reference Circuit (cont.) R4 R3 C3 C1 Q1 C4 R6 C6 R2 R1 R7 V DD C2 C10 C11 C13 C14 QQ1 22 HHD 4V6 LM C7 R3 C3 C1 R5 C5 V DD C15 R4 C4 C18 C9 C16 R2 R1 R6 R7 C6 C7 V DD Q1 C2 C17 R8 C8 C12 L1 R5 C5 QQ1 LM 140451ef_dtl 140451in_01 140451out_01 140451ef_assy-05-09-16 Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4 C5, C14 C6 C7 C8, C10, C17 C9 C11 C12, C13 C15 C16 C18 L1 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7 Description Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 0.01 µF Capacitor, 33 pF Ceramic capacitor, 33 pF Ceramic capacitor, 2.1 pF Capacitor, 0.02 µF Ceramic capacitor, 1.0 µF Electrolytic capacitor, 22 µF, 50 V Ceramic capacitor, 1.4 pF Ceramic capacitor, 0.9 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 10 ohms Chip resistor, 1 k-ohms Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key Digi-Key ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 366-1655-2-ND PCC104BCT-ND 200B 103 100A 330 100B 330 100B 2R1 200B 203 445-1411-1-ND PCE3374CT-ND 100B 1R4 100B 0R9 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND *Gerber files for this circuit are available on request. Data Sheet 6 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F Package Outline Specifications Package 30265 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 7 of 9 Rev. 02, 2005-11-01 PTF140451E PTF140451F Package Outline Specifications (cont.) Package 31265 (45° X 2.03 [.080]) D 2X 2.59±0.51 [.102±.020] LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] 15.49±.51 [.610±.020] 10.16 [.400] G R1.27 [R.050] 2X 7.11 [.280] 4X R0.63 [R.025] MAX 10.16±0.25 [.400±.010] SPH 1.57 [.062] 0 . 0 2 5 [.001] -A- 3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] 265-cases_31265 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 9 Rev. 02, 2005-11-01 PTF140451EF Confidential – Limited Distribution Revision History: 2005-11-01 2005-09-07, Preliminary Data Sheet Previous Version: Page All Data Sheet Subjects (major changes since last revision) Add graphs and circuit information. Remove Preliminary designation. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2005-11-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02, 2005-11-01