IRF IRKTF112-08HN

Bulletin I27091 rev.A 09/97
IRK.F112.. SERIES
INT-A-pakä Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
112 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V RMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IRK.F112..
Units
112
A
90
°C
250
A
@ 50Hz
3090
A
@ 60Hz
3237
A
@ 50Hz
47.8
KA 2s
@ 60Hz
43.6
KA 2s
478
KA 2√s
tq
10 and 15
µs
t rr
2
µs
I T(AV)
@ TC
I T(RMS)
I TSM
2
I t
I 2√t
VDRM / V RRM
TJ
range
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up to 800
V
- 40 to 125
o
C
1
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F112.. Series
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/I DRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = 125°C
V
V
mA
04
400
400
08
800
800
30
Current Carrying Capacity
ITM
Frequency f
ITM
180oel
ITM
Units
100µs
o
180 el
50Hz
220
220
350
550
2060
2900
400Hz
285
285
425
695
1230
1785
A
A
2500Hz
205
205
350
550
460
552
A
5000Hz
175
170
295
448
295
448
A
10000Hz
125
120
230
337
-
-
A
50
50
50
50
Recovery voltage Vr
50
Voltage before turn-on Vd
80% VDRM
80% VDRM
50
V
80% VDRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/µ s
Case temperature
90
60
90
60
90
60
°C
Equivalent values for RC circuit
47 Ω / 0.22 µF
47 Ω / 0.22 µF
47 Ω / 0.22 µF
On-state Conduction
Parameter
IT(AV)
Maximum average on-state current
@ Case temperature
IRK.F112..
Units Conditions
112
A
90
°C
180° conduction, half sine wave
IT(RMS)
Maximum RMS current
250
A
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
3090
A
t = 10ms
No voltage
non-repetitive surge current
3237
t = 8.3ms
reapplied
2600
t = 10ms
100% VRRM
2720
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = 125°C
43.6
t = 8.3ms
reapplied
33.8
t = 10ms
100% VRRM
30.8
t = 8.3ms
reapplied
I2t
I2 √t
Maximum I2 t for fusing
Maximum I2 √t for fusing
47.8
478
VT(TO)1 Low level value of threshold voltage
1.19
VT(TO)2 High level value of threshold voltage
1.43
KA2 s
KA2√s t = 0 to 10ms, no voltage reapplied
V
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x IT(AV) ), TJ = TJ max.
Low level value of on-state slope resistance
1.67
High level value of on-state slope resistance
1.12
VTM
Maximum on-state voltage drop
1.77
V
IH
Maximum holding current
600
mA
TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA
TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
mW
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
r t1
r t2
(I > π x IT(AV) ), TJ = TJ max.
Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Switching
Parameter
IRK.F112..
di/dt
Maximum non-repetitive rate of rise
t
Maximum recovery time
Units Conditions
800
A/µs
2
µs
Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
T J = 125°C
rr
tq
Maximum turn-off time
N
L
10
15
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, T J = 125°C, di/dt = -25A/µs,
µs
VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
Blocking
Parameter
dv/dt
IRK.F112..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 125°C., exponential to 67% VDRM
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
3000
V
30
mA
50 Hz, circuit to base, TJ = 25°C, t = 1 s
TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
IRK.F112..
Units Conditions
P GM
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
P G(AV)
Maximum peak average gate power
10
W
TJ = 125°C, f = 50Hz, d% = 50
IGM
Maximum peak positive gate current
10
A
TJ = 125°C, tp < 5ms
- VGM
Maximum peak negative gate voltage
5
V
IGT
Max. DC gate current required to trigger
200
mA
V GT
DC gate voltage required to trigger
3
V
IGD
DC gate current not to trigger
20
mA
V GD
DC gate voltage not to trigger
0.25
V
TJ = 25°C, Vak 12V, Ra = 6
TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specifications
Parameter
IRK.F112..
TJ
Max. junction operating temperature range
- 40 to 125
T stg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.17
K/W
0.035
K/W
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
T
wt
Mounting torque ± 10%
Approximate weight
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Mounting surface flat and greased
Per module
IAP to heatsink
4 - 6 (35 - 53)
busbar to IAP
4 - 6 (35 - 53)
500 (17.8)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
(lb*in) for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz) lubricated with a compound
Nm
3
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.015
0.012
120°
0.018
0.020
90°
0.024
0.027
60°
0.036
0.037
30°
0.060
0.060
Units
Conditions
K/W
TJ = 125°C
Ordering Information Table
Device Code
IRK
T
F
11
2
1
2
3
4
5
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: IT(AV) x 10 rounded
5
- 1=
2=
-
08
H
L
N
6
7
8
9
option with spacers and longer terminal screws
option with standard terminal screws
6
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
7
- dv/dt code: H ≤ 400V/µs
8
- tq code: N ≤ 10µs
L ≤ 15µs
9
- None = Standard devices
N
= Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
25 (0.98)
----
----
41 (1.61)
47 (1.85)
IRK...2
23 (0.91)
30 (1.18)
36 (1.42)
----
----
IRKHF..
IRKLF..
IRKUF..
130
IRK.F112.. Series
R thJC(DC) = 0.17 K/W
120
110
Conduction Angle
100
30°
60°
90
90°
120°
180°
80
0
20
40
60
80
100
120
IRKVF..
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
IRKTF..
IRKKF..
IRKNF..
130
IRK.F112.. Series
R thJC (DC) = 0.17 K/W
120
110
Conduction Period
100
30°
90
60°
90°
120°
80
180°
DC
70
0
40
80
120
160
200
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.F112.. Series
180°
120°
90°
60°
30°
180
160
140
120
RMS Limit
100
80
Conduction Angle
60
IRK.F112.. Series
Per Junction
T J= 125°C
40
20
0
0
20
40
60
80
100
120
Maximum Average On-state Power Loss (W)
200
280
DC
180°
120°
90°
60°
30°
240
200
160
120
RMS Limit
Conduction Period
80
IRK.F112.. Series
Per Junct ion
T J = 125°C
40
0
0
20
80 100 120 140 160 180
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
2800
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2600
2400
2200
2000
1800
1600
IRK.F112.. Series
Per Junction
1400
1200
10
100
3200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125°C
No Voltage Reapplied
Rated V RRMReapplied
3000
2800
2600
2400
2200
2000
1800
1600
1400
IRK.F112.. Series
Per Junction
1200
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1000
T J= 25°C
T J = 125°C
100
IRK.F112.. Series
Per Junction
10
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Fig. 6 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z thJC(K/W)
10000
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
60
Average On-state Current (A)
1
6
40
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I27091 rev. A 09/97
1
Steady State Value
R thJC= 0.17 K/W
(DC Operation)
0.1
0.01
IRK.F112.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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IRK.F112.. Series
160
IRK.F112.. Series
T J = 125 °C
140
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I27091 rev. A 09/97
I TM = 500 A
300 A
120
200 A
100
100 A
80
50 A
60
40
20
10
20
30
40
50
60
70
80
90 100
140
IRK.F112.. Series
T J = 125 °C
120
I TM= 500 A
300 A
100
200 A
100 A
80
50 A
60
40
20
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
1E4
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D= 80% V DRM
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F112.. Series
Sinusoidal Pulse
T C = 90 °C
50 Hz
150
1E3
50 Hz
1000
400
150
400
2500
1000
5000
2500
5000
IRK.F112.. Series
Sinusoidal Pulse
T C = 60 °C
tp
1E2
1E1
1E2
1E3
1E1
1E41E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F112.. Series
Trapezoidal Pulse
T C = 90°C, di/dt 50A/µs
tp
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V D = 80% V DRM
IRK.F112.. Series
Trapezoidal Pulse
T C = 90°C, di/dt 100A/µs
50 Hz
1E3
50 Hz
150
150
400
400
1000
1000
2500
2500
5000
5000
1E2
1E1
1E2
1E3
1E4
1E4 1E1
1E1
Pulse Basewidth (µs)
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
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7
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Peak On-state Current (A)
1E4
tp
IRK.F112.. Series
Trapezoidal Pulse
T C= 60°C, di/dt 50A/µs
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F112.. Series
Trapezoidal Pulse
T C = 60°C, di/dt 100A/µs
50 Hz
50 Hz
150
1E3
400
150
400
1000
1000
2500
2500
5000
5000
1E2
1E1
1E2
1E4
1E1
1E41E1
1E3
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
1E4
0.5
0.25
1E3
1
10 joules per pulse
5
5
2.5
1
0.5
0.25
0.1
0.1
0.05
0.05
1E2
IRK.F112.. Series
Sinusoidal pulse
IRK.F112..Series
Trapezoidal Pulse
di/dt 50A/µs
tp
tp
1E1
1E1
1E2
1E4
1E1
1E4 1E1
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(a)
(b)
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp =
tp =
tp =
tp =
20ms
10ms
5ms
3.3ms
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
Peak On-state Current (A)
10 joules per pulse
2.5
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.01
IRK.F112.. Series
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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