Bulletin I27091 rev.A 09/97 IRK.F112.. SERIES INT-A-pakä Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 112 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F112.. Units 112 A 90 °C 250 A @ 50Hz 3090 A @ 60Hz 3237 A @ 50Hz 47.8 KA 2s @ 60Hz 43.6 KA 2s 478 KA 2√s tq 10 and 15 µs t rr 2 µs I T(AV) @ TC I T(RMS) I TSM 2 I t I 2√t VDRM / V RRM TJ range www.irf.com up to 800 V - 40 to 125 o C 1 IRK.F112.. Series Bulletin I27091 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F112.. Series Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 04 400 400 08 800 800 30 Current Carrying Capacity ITM Frequency f ITM 180oel ITM Units 100µs o 180 el 50Hz 220 220 350 550 2060 2900 400Hz 285 285 425 695 1230 1785 A A 2500Hz 205 205 350 550 460 552 A 5000Hz 175 170 295 448 295 448 A 10000Hz 125 120 230 337 - - A 50 50 50 50 Recovery voltage Vr 50 Voltage before turn-on Vd 80% VDRM 80% VDRM 50 V 80% VDRM V Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 90 60 90 60 90 60 °C Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF On-state Conduction Parameter IT(AV) Maximum average on-state current @ Case temperature IRK.F112.. Units Conditions 112 A 90 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 250 A TC = 90°C, as AC switch ITSM Maximum peak, one-cycle, 3090 A t = 10ms No voltage non-repetitive surge current 3237 t = 8.3ms reapplied 2600 t = 10ms 100% VRRM 2720 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 43.6 t = 8.3ms reapplied 33.8 t = 10ms 100% VRRM 30.8 t = 8.3ms reapplied I2t I2 √t Maximum I2 t for fusing Maximum I2 √t for fusing 47.8 478 VT(TO)1 Low level value of threshold voltage 1.19 VT(TO)2 High level value of threshold voltage 1.43 KA2 s KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. Low level value of on-state slope resistance 1.67 High level value of on-state slope resistance 1.12 VTM Maximum on-state voltage drop 1.77 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. r t1 r t2 (I > π x IT(AV) ), TJ = TJ max. Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse www.irf.com IRK.F112.. Series Bulletin I27091 rev. A 09/97 Switching Parameter IRK.F112.. di/dt Maximum non-repetitive rate of rise t Maximum recovery time Units Conditions 800 A/µs 2 µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 125°C rr tq Maximum turn-off time N L 10 15 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F112.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to 67% VDRM voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current 3000 V 30 mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F112.. Units Conditions P GM Maximum peak gate power 60 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F112.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 RthJC Max. thermal resistance, junction to Units Conditions °C 0.17 K/W 0.035 K/W Per junction, DC operation case RthC-hs Max. thermal resistance, case to heatsink T wt Mounting torque ± 10% Approximate weight www.irf.com Mounting surface flat and greased Per module IAP to heatsink 4 - 6 (35 - 53) busbar to IAP 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F112.. Series Bulletin I27091 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.015 0.012 120° 0.018 0.020 90° 0.024 0.027 60° 0.036 0.037 30° 0.060 0.060 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 11 2 1 2 3 4 5 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - 1= 2= - 08 H L N 6 7 8 9 option with spacers and longer terminal screws option with standard terminal screws 6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs 8 - tq code: N ≤ 10µs L ≤ 15µs 9 - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F112.. Series Bulletin I27091 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types A B C D E IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- IRKHF.. IRKLF.. IRKUF.. 130 IRK.F112.. Series R thJC(DC) = 0.17 K/W 120 110 Conduction Angle 100 30° 60° 90 90° 120° 180° 80 0 20 40 60 80 100 120 IRKVF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) IRKTF.. IRKKF.. IRKNF.. 130 IRK.F112.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Period 100 30° 90 60° 90° 120° 80 180° DC 70 0 40 80 120 160 200 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F112.. Series 180° 120° 90° 60° 30° 180 160 140 120 RMS Limit 100 80 Conduction Angle 60 IRK.F112.. Series Per Junction T J= 125°C 40 20 0 0 20 40 60 80 100 120 Maximum Average On-state Power Loss (W) 200 280 DC 180° 120° 90° 60° 30° 240 200 160 120 RMS Limit Conduction Period 80 IRK.F112.. Series Per Junct ion T J = 125°C 40 0 0 20 80 100 120 140 160 180 Average On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 2800 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2600 2400 2200 2000 1800 1600 IRK.F112.. Series Per Junction 1400 1200 10 100 3200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated V RRMReapplied 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F112.. Series Per Junction 1200 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1000 T J= 25°C T J = 125°C 100 IRK.F112.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Fig. 6 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC(K/W) 10000 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 1 0.1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 60 Average On-state Current (A) 1 6 40 Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin I27091 rev. A 09/97 1 Steady State Value R thJC= 0.17 K/W (DC Operation) 0.1 0.01 IRK.F112.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com IRK.F112.. Series 160 IRK.F112.. Series T J = 125 °C 140 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27091 rev. A 09/97 I TM = 500 A 300 A 120 200 A 100 100 A 80 50 A 60 40 20 10 20 30 40 50 60 70 80 90 100 140 IRK.F112.. Series T J = 125 °C 120 I TM= 500 A 300 A 100 200 A 100 A 80 50 A 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D= 80% V DRM Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F112.. Series Sinusoidal Pulse T C = 90 °C 50 Hz 150 1E3 50 Hz 1000 400 150 400 2500 1000 5000 2500 5000 IRK.F112.. Series Sinusoidal Pulse T C = 60 °C tp 1E2 1E1 1E2 1E3 1E1 1E41E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F112.. Series Trapezoidal Pulse T C = 90°C, di/dt 50A/µs tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F112.. Series Trapezoidal Pulse T C = 90°C, di/dt 100A/µs 50 Hz 1E3 50 Hz 150 150 400 400 1000 1000 2500 2500 5000 5000 1E2 1E1 1E2 1E3 1E4 1E4 1E1 1E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F112.. Series Bulletin I27091 rev. A 09/97 Peak On-state Current (A) 1E4 tp IRK.F112.. Series Trapezoidal Pulse T C= 60°C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F112.. Series Trapezoidal Pulse T C = 60°C, di/dt 100A/µs 50 Hz 50 Hz 150 1E3 400 150 400 1000 1000 2500 2500 5000 5000 1E2 1E1 1E2 1E4 1E1 1E41E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 0.5 0.25 1E3 1 10 joules per pulse 5 5 2.5 1 0.5 0.25 0.1 0.1 0.05 0.05 1E2 IRK.F112.. Series Sinusoidal pulse IRK.F112..Series Trapezoidal Pulse di/dt 50A/µs tp tp 1E1 1E1 1E2 1E4 1E1 1E4 1E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (a) (b) (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = tp = tp = tp = 20ms 10ms 5ms 3.3ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 10 joules per pulse 2.5 (1) (2) (3) (4) VGD IGD 0.1 0.01 IRK.F112.. Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics 8 www.irf.com