Product Overview MBR4015LWT: 40 A, 15 V Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • • • • • Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop Dual Diode Construction - Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating Full Electrical Isolation without Additional Hardware • • • • • Mechanical Characteristics: Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8" Weight: 4.3 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds For more features, see the data sheet Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) MBR4015LWTG Pb-free Active Common Cathode 15 0.5 5000 40 120 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 trr Max (ns) Cj Max (pF) Package Type TO-247-3