Product Overview

Product Overview
MBR4015LWT: 40 A, 15 V Schottky Rectifier
For complete documentation, see the data sheet
Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features
epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching
power supplies, free wheeling diodes and polarity protection diodes.
Features
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Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Low Forward Voltage Drop
Dual Diode Construction - Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
Full Electrical Isolation without Additional Hardware
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Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8"
Weight: 4.3 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Configurat
ion
VRRM Min
(V)
VF Max
(V)
IRM Max
(µA)
IO(rec) Max
(A)
IFSM Max
(A)
MBR4015LWTG
Pb-free
Active
Common
Cathode
15
0.5
5000
40
120
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
trr Max
(ns)
Cj Max
(pF)
Package
Type
TO-247-3