TSB611 Low-power, rail-to-rail output, 36 V operational amplifier Datasheet - production data Applications Industrial Power supplies Automotive Description SOT23-5 OUT VCC- 1 5 VCC+ 2 + IN+ The TSB611 single operational amplifier (op amp) offers an extended supply voltage operating range and rail-to-rail output. It also offers an excellent speed/power consumption ratio with 560 kHz gain bandwidth product while consuming less than 125 µA at 36V supply voltage. 3 4 IN- The TSB611 operates over a wide temperature range from -40 °C to 125°C making this device ideal for industrial and automotive applications. Features Low offset voltage: 1 mV max Low power consumption: 125 µA max. at 36 V Wide supply voltage: 2.7 to 36 V Gain bandwidth product: 560 kHz typ Unity gain stable Rail-to-rail output Input common mode voltage includes ground High tolerance to ESD: 4 kV HBM Extended temperature range: -40 °C to 125 °C Automotive qualification August 2015 Thanks to its small package size, the TSB611 can be used in applications where space on the board is limited. It can thus reduce the overall cost of the PCB. DocID028074 Rev 1 This is information on a product in full production. 1/24 www.st.com Contents TSB611 Contents 1 Absolute maximum ratings and operating conditions ................. 3 2 Electrical characteristics ................................................................ 4 3 Application information ................................................................ 16 4 3.1 Operating voltages .......................................................................... 16 3.2 Input common-mode range ............................................................. 16 3.3 Rail-to-rail output ............................................................................. 16 3.4 Input offset voltage drift over temperature ....................................... 16 3.5 Long term input offset voltage drift .................................................. 16 3.6 ESD structure of TSB611 ................................................................ 18 3.7 Initialization time.............................................................................. 19 Package information ..................................................................... 20 4.1 5 6 2/24 SOT23-5 package information ........................................................ 21 Ordering information..................................................................... 22 Revision history ............................................................................ 23 DocID028074 Rev 1 TSB611 1 Absolute maximum ratings and operating conditions Absolute maximum ratings and operating conditions Table 1: Absolute maximum ratings (AMR) Symbol Vcc Parameter Supply voltage Differential input voltage Vin Input voltage Tstg Rthja Tj Input current (2) ±Vcc V (Vcc-) - 0.2 to (Vcc+) + 0.2 (3) Storage temperature Thermal resistance junction to ambient (4)(5) Maximum junction temperature HBM: human body model ESD Unit 40 Vid Iin Value (1) MM: machine model (6) mA -65 to 150 °C 250 °C/W 150 °C 4000 (7) CDM: charged device model 10 200 (8) Latch-up immunity V 1500 200 mA Notes: (1) (2) (3) (4) (5) (6) (7) (8) All voltage values, except differential voltage are with respect to network ground terminal. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. Input current must be limited by a resistor in series with the inputs. Rth are typical values. Short-circuits can cause excessive heating and destructive dissipation. According to JEDEC standard JESD22-A114F. According to JEDEC standard JESD22-A115A. According to ANSI/ESD STM5.3.1. Table 2: Operating conditions Symbol Parameter Vcc Supply voltage Vicm Common mode input voltage range Toper Operating free air temperature range Value 2.7 to 36 DocID028074 Rev 1 (Vcc-) - 0.1 to (Vcc+) - 1 -40 to 125 Unit V °C 3/24 Electrical characteristics 2 TSB611 Electrical characteristics Table 3: Electrical characteristics at Vcc+ = 2.7 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance -1 Vio ΔVio/ΔT Iio Iib CMR Input offset voltage Input offset voltage drift Input offset current Input bias current Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Avd Large signal voltage gain VOH High level output voltage (voltage drop from Vcc+) VOL Low level output voltage Isink Iout Isource ICC Supply current (per channel) -40 °C < T< 125 °C 1 -1.6 -40 °C < T< 125 °C 1.6 1.8 6 1 5 -40 °C < T< 125 °C 10 5 -40 °C < T< 125 °C 10 mV μV/°C nA 15 Vicm = 0 V to Vcc+ -1 V, Vout = Vcc/2 90 -40 °C < T< 125 °C 85 Vout = 0.5 V to (Vcc+ - 0.5 V) 98 -40 °C < T< 125 °C 94 115 dB 102 13 -40 °C < T< 125 °C 25 30 26 -40 °C < T< 125 °C 30 mV 35 Vout = Vcc 13 -40 °C < T< 125 °C 10 Vout = 0 V 20 -40 °C < T< 125 °C 7 No load, Vout = Vcc/2 20 mA 28 92 -40 °C < T< 125 °C 110 125 µA AC performance Gain bandwidth product RL = 10 kΩ, CL = 100 pF 480 Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 430 Фm Phase margin RL = 10 kΩ, CL = 100 pF 60 Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF 18 dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.13 0.18 SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.10 0.14 GBP en THD+N 4/24 Equivalent input noise voltage Total harmonic distortion + noise V/μs f = 1 kHz 37 f = 10 kHz 32 fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 1 Vpp DocID028074 Rev 1 kHz 0.005 nV/√Hz % TSB611 Symbol trec Electrical characteristics Parameter Conditions Overload recovery time Min. Typ. 2 DocID028074 Rev 1 Max. Unit µs 5/24 Electrical characteristics TSB611 Table 4: Electrical characteristics at Vcc+ = 12 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio ΔVio/ΔT Iio Iib CMR SVR Input offset voltage Input offset voltage drift Input offset current Input bias current Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Supply voltage rejection ratio: 20 log (ΔVcc/ΔVio) Avd Large signal voltage gain VOH High level output voltage drop from Vcc+ -40 °C < T< 125 °C -1 1 -1.6 1.6 -40 °C < T< 125 °C 1.6 1 -40 °C < T< 125 °C 5 -40 °C < T< 125 °C Low level output voltage Isink Iout Isource ICC Supply current (per channel) μV/°C 5 15 10 nA 15 Vicm = 0 V to Vcc+ - 1 V, Vout = Vcc/2 95 -40 °C < T< 12 5°C 90 Vcc = 2.8 to 12 V 95 -40 °C < T< 125 °C 90 Vout = 0.5 V to (Vcc+ - 0.5 V) 105 -40 °C < T< 125 °C 100 126 124 dB 115 37 -40 °C < T< 125 °C 60 65 56 VOL 6 mV -40 °C < T< 125 °C 65 mV 75 Vout = Vcc 24 -40 °C < T< 125 °C 10 Vout = 0 V 28 -40 °C < T< 125 °C 10 No load, Vout = Vcc/2 35 mA 40 97 -40 °C < T< 125 °C 115 130 µA AC performance Gain bandwidth product RL = 10 kΩ, CL = 100 pF 510 Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 460 Фm Phase margin RL = 10 kΩ, CL = 100 pF 60 Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF 18 dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.13 0.19 SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.11 0.15 GBP en THD+N 6/24 Equivalent input noise voltage Total harmonic distortion + noise V/μs f = 1 kHz 31 f = 10 kHz 30 fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 2 Vpp DocID028074 Rev 1 kHz 0.004 nV/√Hz % TSB611 Symbol trec Electrical characteristics Parameter Conditions Overload recovery time Min. Typ. 2 DocID028074 Rev 1 Max. Unit µs 7/24 Electrical characteristics TSB611 Table 5: Electrical characteristics at Vcc+ = 36 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio ΔVio/ΔT Iio Iib CMR SVR Input offset voltage Input offset voltage drift Input offset current Input bias current Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Supply voltage rejection ratio 20 log (ΔVcc/ΔVio) Avd Large signal voltage gain VOH High level output voltage drop from VCC+ -40 °C < T< 125 °C -1 1 -1.6 1.6 -40 °C < T< 125 °C 1.3 1 -40 °C < T< 125 °C 5 -40 °C < T< 125 °C Low level output voltage Isink Iout Isource ICC Supply current (per channel) μV/°C 5 20 10 nA 20 Vicm = 0 V to Vcc+ - 1 V, Vout = Vcc/2 105 -40 °C < T< 125 °C 100 Vcc = 12 to 36 V 100 -40 °C < T< 125 °C 95 Vout = 0.5 V to (Vcc+ - 0.5 V) 110 -40 °C < T< 125 °C 105 130 124 dB 120 80 -40 °C < T< 125 °C 110 150 90 VOL 6 mV -40 °C < T< 125 °C 110 mV 150 Vout = Vcc 40 -40 °C < T< 125 °C 10 Vout = 0 V 40 -40 °C < T< 125 °C 20 No load, Vout = Vcc/2 60 mA 70 103 -40 °C < T< 125 °C 125 140 µA AC performance Gain bandwidth product RL = 10 kΩ, CL = 100 pF 560 Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 500 Фm Phase margin RL = 10 kΩ, CL = 100 pF 58 Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF 18 dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.15 0.20 SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.12 0.16 GBP en THD+N 8/24 Equivalent input noise voltage Total harmonic distortion + noise V/μs f = 1 kHz 29 f = 10 kHz 28 fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 2 Vpp DocID028074 Rev 1 kHz 0.004 nV/√Hz % TSB611 Symbol trec Electrical characteristics Parameter Overload recovery time Conditions RL = 10 kΩ, CL = 100 pF, Gain = 1 DocID028074 Rev 1 Min. Typ. 2 Max. Unit µs 9/24 Electrical characteristics TSB611 Figure 1: Supply current vs. supply voltage at Vicm = VCC/2 Figure 2: Input offset voltage distribution at VCC = 2.7 V Figure 3: Input offset voltage distribution at VCC = 12 V Figure 4: Input offset voltage distribution at VCC = 36 V Figure 5: Input offset voltage vs. Temperature at VCC = 36 V Figure 6: Input offset voltage temperature variation distribution at VCC = 36 V 10/24 DocID028074 Rev 1 TSB611 Electrical characteristics Figure 7: Input offset voltage vs. supply voltage Figure 8: Input offset voltage vs. common-mode voltage at VCC = 2.7 V Figure 9: Input offset voltage vs. common-mode voltage at VCC = 36 V Figure 10: Input bias current vs. common mode voltage at VCC = 4 V Figure 11: Input bias current vs. common mode voltage at VCC = 36 V Figure 12: Output current vs. output voltage at VCC = 2.7 V DocID028074 Rev 1 11/24 Electrical characteristics TSB611 Figure 13: Output current vs. output voltage at VCC = 36 V Figure 14: Output voltage (Voh) vs. supply voltage Figure 15: Output voltage (Vol) vs. supply voltage Figure 16: Amplifier behavior close to negative rail at VCC = 5 V Figure 17: Amplifier behavior close to positive rail at VCC = 5 V Figure 18: Slew rate vs. supply voltage 12/24 DocID028074 Rev 1 TSB611 Electrical characteristics Figure 19: Negative slew rate behavior vs. temperature at VCC = 36 V Figure 20: Positive slew rate behavior vs. temperature at VCC = 36 V Figure 21: Small step response vs. time at VCC = 36 V Figure 22: Output desaturation vs. time Figure 23: Gain and phase vs. frequency at VCC = 2.7 V Figure 24: Gain and phase vs. frequency at VCC = 36 V DocID028074 Rev 1 13/24 Electrical characteristics TSB611 Figure 25: Phase margin vs. output current at VCC = 2.7 V and 36 V Figure 26: Phase margin vs. capacitive load at VCC = 2.7 V and 36 V 60 Phase margin (°) 50 40 Vcc=2.7V 30 Vcc=36V 20 10 0 100 Vicm=Vcc/2 Rl=10kΩ T=25°C 200 300 400 500 700 1000 Capacitive load (pF) Figure 27: Overshoot vs. capacitive load at VCC = 2.7 V and 36 V Figure 28: Noise vs. frequency at VCC = 36 V Figure 29: Noise vs. time at VCC = 36 V Figure 30: THD+N vs. frequency 14/24 DocID028074 Rev 1 TSB611 Electrical characteristics Figure 31: THD+N vs. output voltage Figure 32: PSRR vs. frequency at VCC = 36 V Figure 33: Output impedance vs. frequency at VCC = 2.7 V and 36 V Figure 34: Output series resistor recommended for stability vs. capacitive load DocID028074 Rev 1 15/24 Application information TSB611 3 Application information 3.1 Operating voltages The TSB611 operational amplifier can operate from 2.7 V to 36 V. The parameters are fully specified at 2.7 V, 12 V, and 36 V power supplies. However, parameters are very stable in the full Vcc range. Additionally, main specifications are guaranteed in the extended temperature range from -40 to 125 °C. 3.2 Input common-mode range The TSB611 has an input common-mode range that includes ground. The input commonmode range is extended from (VCC-) - 0.1 V to (VCC+) - 1 V. 3.3 Rail-to-rail output The operational amplifier's output levels can go close to the rails: 100 mV maximum below the positive rail and 110 mV maximum above the negative rail when connected to a 10 kΩ resistive load to VCC/2 for a power supply voltage of 36 V. 3.4 Input offset voltage drift over temperature The maximum input voltage drift variation over temperature is defined as the offset variation related to the offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using Equation 1. Equation 1 ∆Vio V T – Vio 25 °C = max io ∆T T – 25 °C Where T = -40 °C and 125 °C. The datasheet maximum value is guaranteed by measurements on a representative sample size ensuring a Cpk (process capability index) greater than 2. 3.5 Long term input offset voltage drift To evaluate product reliability, two types of stress acceleration are used: Voltage acceleration, by changing the applied voltage Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. 16/24 DocID028074 Rev 1 TSB611 Application information Equation 2 AFV = e β . V S – VU Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 AFT = e Ea 1 1 ------ . – k TU TS Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate -5 -1 k is the Boltzmann constant (8.6173 x 10 eV.K ) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF = AFT × AFV AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. Equation 5 Months = AF × 1000 h × 12 months / 24 h × 365.25 days To evaluate the op amp reliability, a follower stress condition is used where V CC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 VCC = maxVop with Vicm = VCC 2 DocID028074 Rev 1 17/24 Application information TSB611 The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 ∆Vio = Vio dr ift month s Where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration. 3.6 ESD structure of TSB611 The TSB611 is protected against electrostatic discharge (ESD) with dedicated diodes (see Figure 35). These diodes must be considered at application level especially when signals applied on the input pins go beyond the power supply rails (V CC+ or VCC-). Current through the diodes must be limited to a maximum of 10 mA as stated in Table 1. A serial resistor or a Schottky diode can be used on the inputs to improve protection but the 10 mA limit of input current must be strictly observed. Figure 35: ESD structure TSB611 + 18/24 DocID028074 Rev 1 TSB611 3.7 Application information Initialization time The TSB611 has a good power supply rejection ratio (PSRR), but as with all devices, it is recommended to use a 22 nF bypass capacitor as close as possible to the power supply pins. It prevents the noise present on the power supply impacting the signal conditioning. In addition, this bypass capacitor enhances the initialization time (see Figure 36 and Figure 37). Figure 36: Startup behavior without bypass capacitor Figure 37: Startup behavior with a 22 nF bypass capacitor DocID028074 Rev 1 19/24 Package information 4 TSB611 Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 20/24 DocID028074 Rev 1 TSB611 4.1 Package information SOT23-5 package information Figure 38: SOT23-5 package outline Table 6: SOT23-5 mechanical data Dimensions Ref. A Millimeters Inches Min. Typ. Max. Min. Typ. Max. 0.90 1.20 1.45 0.035 0.047 0.057 A1 0.15 0.006 A2 0.90 1.05 1.30 0.035 0.041 0.051 B 0.35 0.40 0.50 0.014 0.016 0.020 C 0.09 0.15 0.20 0.004 0.006 0.008 D 2.80 2.90 3.00 0.110 0.114 0.118 D1 1.90 0.075 e 0.95 0.037 E 2.60 2.80 3.00 0.102 0.110 0.118 F 1.50 1.60 1.75 0.059 0.063 0.069 L 0.10 0.35 0.60 0.004 0.014 0.024 K 0 degrees 10 degrees 0 degrees DocID028074 Rev 1 10 degrees 21/24 Ordering information 5 TSB611 Ordering information Table 7: Order codes Order code TSB611ILT TSB611IYLT (1) Temperature range Package Packing -40 °C to 125 °C SΟΤ23-5 Tape and reel Marking K191 K194 Notes: (1) Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 & Q 002 or equivalent on going. 22/24 DocID028074 Rev 1 TSB611 6 Revision history Revision history Table 8: Document revision history Date Revision 17-Aug-2015 1 Changes Initial release DocID028074 Rev 1 23/24 TSB611 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 24/24 DocID028074 Rev 1