TSX920, TSX921, TSX922, TSX923 10 MHz rail-to-rail CMOS 16 V operational amplifiers Datasheet - production data Applications Communications Process control Test equipment Description The TSX92x single and dual operational amplifiers (op amps) offer excellent AC characteristics such as 10 MHz gain bandwidth, 17 V/ms slew rate, and 0.0003 % THD+N. These features make the TSX92x family particularly well-adapted for communications, I/V amplifiers for ADCs, and active filtering applications. Their rail-to-rail input and output capability, while operating on a wide supply voltage range of 4 V to 16 V, allows these devices to be used in a wide range of applications. Automotive qualification is available as these devices can be used in this market segment. Features Rail-to-rail input and output Wide supply voltage: 4 V - 16 V Gain bandwidth product: 10 MHz typ at 16 V Low power consumption: 2.8 mA typ per amplifier at 16 V Unity gain stable Low input bias current: 10 pA typ High tolerance to ESD: 4 kV HBM Extended temperature range: -40 °C to 125 °C Automotive qualification Related products Shutdown mode is available on the single (TSX920) and dual (TSX923) versions enabling an important current consumption reduction while this function is active. The TSX92x family is available in SMD packages featuring a high level of integration. The DFN8 package, used in the TSX922, with a typical size of 2x2 mm and a maximum height of 0.8 mm offers even greater package size reduction. Table 1: Device summary Op-amp version With shutdown mode Without shutdown mode Single TSX920 TSX921 Dual TSX923 TSX922 See the TSX5 series for low-power features See the TSX6 series for micro-power features See the TSX929 series for higher speeds See the TSV9 series for lower voltages January 2016 DocID024310 Rev 4 This is information on a product in full production. 1/32 www.st.com Contents TSX920, TSX921, TSX922, TSX923 Contents 1 Package pin connections................................................................ 3 2 Absolute maximum ratings and operating conditions ................. 4 3 4 Electrical characteristics ................................................................ 5 Electrical characteristic curves .................................................... 11 5 Application information ................................................................ 17 6 5.1 Operating voltages .......................................................................... 17 5.2 Rail-to-rail input ............................................................................... 17 5.3 Input pin voltage range .................................................................... 17 5.4 Input offset voltage drift over temperature ....................................... 18 5.5 Long term input offset voltage drift .................................................. 18 5.6 Capacitive load................................................................................ 20 5.7 High-side current sensing ............................................................... 21 5.8 High-speed photodiode ................................................................... 22 Package information ..................................................................... 23 6.1 SOT23-5 package information ........................................................ 24 6.2 SOT23-6 package information ........................................................ 25 6.3 MiniSO8 package information ......................................................... 26 6.4 SO8 package information ................................................................ 27 6.5 DFN8 2x2 package information ....................................................... 28 6.6 MiniSO10 package information ....................................................... 29 7 Ordering information..................................................................... 30 8 Revision history ............................................................................ 31 2/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 1 Package pin connections Package pin connections Figure 1: Pin connections (top view) DocID024310 Rev 4 3/32 Absolute maximum ratings and operating conditions 2 TSX920, TSX921, TSX922, TSX923 Absolute maximum ratings and operating conditions Table 2: Absolute maximum ratings (AMR) Symbol VCC Parameter Supply voltage (1) Vid Differential input voltage Vin Input voltage Iin Tstg Tj Rthja Input current (2) (3) Storage temperature Maximum junction temperature Thermal resistance junction to (4)(5) ambient MM: machine model Unit 18 V ±VCC mV (VCC-)- 0.2 to (VCC+) + 0.2 V 10 mA -65 to 150 HBM: human body model ESD Value 150 SOT23-5 250 SOT23-6 240 MiniSO8 190 SO8 125 DFN8 2x2 57 MiniSO10 113 (6) °C/W 4000 (7) 100 CDM: charged device model °C (8) V 1500 Latch-up immunity 200 mA Notes: (1) (2) (3) (4) (5) (6) (7) (8) All voltage values, except the differential voltage are with respect to network ground terminal. The differential voltage is the non-inverting input terminal with respect to the inverting input terminal. Input current must be limited by a resistor in series with the inputs. Rth are typical values. Short-circuits can cause excessive heating and destructive dissipation. According to JEDEC standard JESD22-A114F According to JEDEC standard JESD22-A115A According to ANSI/ESD STM5.3.1 Table 3: Operating conditions Symbol 4/32 Parameter VCC Supply voltage Vicm Common mode input voltage range Toper Operating free air temperature range Value 4 to 16 DocID024310 Rev 4 (VCC-) - 0.1 to (VCC+) + 0.1 -40 to 125 Unit V °C TSX920, TSX921, TSX922, TSX923 3 Electrical characteristics Electrical characteristics Table 4: Electrical characteristics at VCC+ = 4.5 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Vio Parameter Input offset voltage Conditions Min. Typ. Vicm = 2 V (all order codes except TSX922IYST and TSX922IYDT) 4 Tmin < Top < Tmax 5 Vicm = 2 V (TSX922IYST, TSX922IYDT order codes only) 5 Tmin < Top < Tmax ∆Vio/∆T ∆Vio Iib Input offset voltage drift Long-term input offset (1)(2) voltage drift Input bias current Max. Unit mV 6.5 All order codes except TSX922IYST and TSX922IYDT 2 10 TSX922IYST and TSX922IYDT order codes only 2 15 TSX920/TSX921 6 TSX922/TSX923 9 Vout = VCC/2 10 μV/°C Tmin < Top < Tmax nV/√month 100 200 Vout = VCC/2 10 100 pA Iio Input offset current RIN Input resistance 1 TΩ CIN Input capacitance 8 pF CMRR Avd Common mode rejection ratio 20 log (ΔVic/ΔVio) Large signal voltage gain Tmin < Top < Tmax Vicm = -0.1 V to 2 V, VOUT = VCC/2 61 Tmin < Top < Tmax 59 Vicm = -0.1 V to 4.6 V, VOUT = VCC/2 59 Tmin < Top < Tmax 57 RL= 2 kΩ, Vout = 0.3 V to 4.2 V 100 Tmin < Top < Tmax 90 RL= 10 kΩ, Vout = 0.2 V to 4.3 V 100 Tmin < Top < Tmax 90 RL= 2 kΩ tο VCC/2 VOH High level output voltage 200 82 72 112 50 Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 VOL Low level output voltage 10 Tmin < Top < Tmax DocID024310 Rev 4 16 mV from VCC+ 20 42 Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 80 100 Tmin < Top < Tmax RL= 2 kΩ tο VCC/2 dB 108 80 100 9 16 mV 20 5/32 Electrical characteristics Symbol Parameter Isink Iout Isource ICC GBP Min. Typ. Vout = 4.5 V 16 21 Tmin < Top < Tmax 13 Vout = 0 V 16 Tmin < Top < Tmax 13 No load, Vout = VCC/2 Gain bandwidth product RL = 10 kΩ, CL = 20 pF, G = 20 dB Unity gain frequency ɸm Phase margin Gm Gain margin SR- Conditions Supply current (per amplifier) FU SR+ TSX920, TSX921, TSX922, TSX923 Max. 21 2.9 Tmin < Top < Tmax mA 3.4 3.5 9 MHz 9.3 RL = 10 kΩ, CL = 20 pF Unit 60 Degrees 6.7 dB Positive slew rate Av = 1, Vout = 0.5 to 4.0 V, measured between 10 % to 90 % 14.7 Negative slew rate Av = 1, Vout = 4.0 to 0.5 V, measured between 90 % to 10 % 17.2 f = 10 kHz 17.9 f = 100 kHz 12.9 8.1 µVpp 0.002 % en Equivalent input noise voltage ∫en Low-frequency peak-topeak input noise Bandwidth: f = 0.1 to 10 Hz THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL = 10 kΩ, Vout = 2 Vrms V/μs nV√Hz Shutdown characteristics (TSX920 and TSX923 only) ICC_shdn Supply current in shutdown mode (per amplifier) SHDN = VCC- 7 Tmin < Top < Tmax 15 20 ton Amplifier turn-on time 9 toff Amplifier turn-off time 0.7 µΑ µs Notes: (1) Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.5: "Long term input offset voltage drift"). (2) When used in comparator mode, with high differential input voltage, during a long period of time with VCC close to 16 V and Vicm>VCC/2, Vio can experience a permanent drift of a few mV drift. This phenomenon is notably worse at low temperatures. 6/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Electrical characteristics Table 5: Electrical characteristics at VCC+ = 10 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Vio Parameter Input offset voltage Conditions Min. Typ. Vicm = 2 V (all order codes except TSX922IYST and TSX922IYDT) 4 Tmin < Top < Tmax 5 Vicm = 2 V (TSX922IYST and TSX922IYDT order codes only) 5 Tmin < Top < Tmax ∆Vio/∆T ∆Vio Iib Input offset voltage drift Long-term input offset (1)(2) voltage drift Input bias current Max. Unit mV 6.5 All order codes except TSX922IYST and TSX922IYDT 2 TSX922IYST and TSX922IYDT order codes only 2 TSX920/TSX921 92 TSX922/TSX923 128 Vout = VCC/2 10 10 μV/°C Tmin < Top < Tmax 15 nV/√month 100 200 Vout = VCC/2 10 100 pA Iio Input offset current RIN Input resistance 1 TΩ CIN Input capacitance 8 pF CMRR Avd Common mode rejection ratio 20 log (ΔVic/ΔVio) Large signal voltage gain Tmin < Top < Tmax 200 Vicm = -0.1 V to 7 V, VOUT = VCC/2 72 Tmin < Top < Tmax 70 Vicm = -0.1 V to 10.1 V, VOUT = VCC/2 64 Tmin < Top < Tmax 62 RL= 2 kΩ, Vout = 0.3 V to 9.7 V 100 Tmin < Top < Tmax 90 RL= 10 kΩ, Vout = 0.2 V to 9.8 V 100 Tmin < Top < Tmax 90 RL= 2 kΩ tο VCC/2 VOH High-level output voltage 85 75 dB 107 117 94 Tmin < Top < Tmax 130 RL= 10 kΩ tο VCC/2 31 Tmin < Top < Tmax Low-level output voltage 80 Tmin < Top < Tmax Iout Isource RL= 10 kΩ tο VCC/2 14 40 mV 50 Vout = 10 V 50 Tmin < Top < Tmax 42 Vout = 0 V 75 Tmin < Top < Tmax 70 DocID024310 Rev 4 mV from VCC+ 110 130 Tmin < Top < Tmax Isink 40 50 RL= 2 kΩ tο VCC/2 VOL 110 55 82 mA 7/32 Electrical characteristics Symbol ICC GBP TSX920, TSX921, TSX922, TSX923 Parameter Conditions Supply current (per amplifier) No load, Vout = VCC/2 Gain bandwidth product RL = 10 kΩ, CL = 20 pF, G = 20 dB FU Unity gain frequency ɸm Phase margin Gm Gain margin Min. Typ. Max. 3.1 3.6 Tmin < Top < Tmax 3.6 10 56 Degrees 6 dB SR+ Positive slew rate Av = 1, Vout = 0.5 to 9.5 V, measured between 10 % to 90 % 17.7 SR- Negative slew rate Av = 1, Vout = 9.5 to 0.5 V, measured between 90 % to 10 % 19.6 f = 10 kHz 16.8 f = 100 kHz 12 en Equivalent input noise voltage ∫en Low-frequency peak-topeak input noise Bandwidth: f = 0.1 to 10 Hz THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL = 10 kΩ, Vout = 2 Vrms mA MHz 11.2 RL = 10 kΩ, CL = 20 pF Unit V/μs nV√Hz 8.64 µVpp 0.0006 % Shutdown characteristics (TSX920 and TSX923 only) ICC_shdn Supply current in shutdown mode (per amplifier) SHDN = VCC- 7 Tmin < Top < Tmax 15 20 ton Amplifier turn-on time 2.4 toff Amplifier turn-off time 0.35 µΑ µs Notes: (1) Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.5: "Long term input offset voltage drift"). (2) When used in comparator mode, with high differential input voltage, during a long period of time with VCC close to 16 V and Vicm>VCC/2, Vio can experience a permanent drift of a few mV drift. This phenomenon is notably worse at low temperatures. 8/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Electrical characteristics Table 6: Electrical characteristics at VCC+ = 16 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Vio Parameter Input offset voltage Conditions Min. Typ. Vicm = 2 V (all order codes except TSX922IYST and TSX922IYDT) 4 Tmin < Top < Tmax 5 Vicm = 2 V (TSX922IYST and TSX922IYDT order codes only) 5 Tmin < Top < Tmax ∆Vio/∆T ∆Vio Iib Input offset voltage drift Long-term input offset (1)(2) voltage drift Input bias current Max. Unit mV 6.5 All order codes except TSX922IYST and TSX922IYDT 2 TSX922IYST and TSX922IYDT order codes only 2 10 μV/°C TSX920/TSX921 1.73 TSX922/TSX923 2.26 Vout = VCC/2 10 Tmin < Top < Tmax 15 nV/√month 100 200 Vout = VCC/2 10 100 pA Iio Input offset current RIN Input resistance 1 TΩ CIN Input capacitance 8 pF CMRR SVRR Avd Common mode rejection ratio 20 log (ΔVic/ΔVio) Supply voltage rejection ratio Large signal voltage gain Tmin < Top < Tmax Vicm = -0.1 V to 13 V, VOUT = VCC/2 73 Tmin < Top < Tmax 71 Vicm = -0.1 V to 16.1 V, VOUT = VCC/2 67 Tmin < Top < Tmax 65 VCC = 4.5 V tο 16 V 73 Tmin < Top < Tmax 71 RL= 2 kΩ, Vout = 0.3 V to 15.7 V 100 Tmin < Top < Tmax 90 RL= 10 kΩ, Vout = 0.2 V to 15.8 V 100 Tmin < Top < Tmax 90 RL= 2 kΩ tο VCC/2 VOH High-level output voltage 200 85 76 85 105 113 150 Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 VOL Low-level output voltage 43 Tmin < Top < Tmax DocID024310 Rev 4 50 mV from VCC+ 70 140 Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 200 230 Tmin < Top < Tmax RL= 2 kΩ tο VCC/2 dB 200 230 30 50 mV 70 9/32 Electrical characteristics Symbol Parameter Isink Iout Isource ICC GBP Min. Typ. Vout = 16 V 45 50 Tmin < Top < Tmax 40 Vout = 0 V 65 Tmin < Top < Tmax 60 No load, Vout = VCC/2 Gain bandwidth product RL = 10 kΩ, CL = 20 pF, G = 20 dB Unity gain frequency ɸm Phase margin Gm Gain margin SR- Conditions Supply current (per amplifier) FU SR+ TSX920, TSX921, TSX922, TSX923 74 2.8 Tmin < Top < Tmax RL = 10 kΩ, CL = 20 pF Unit mA 3.4 3.4 10 MHz 12 55 Degrees 5.9 dB Positive slew rate Av = 1, Vout = 0.5 to 15.5 V, measured between 10 % to 90 % 16.2 Negative slew rate Av = 1, Vout = 15.5 to 0.5 V, measured between 90 % to 10 % 17.2 f = 10 kHz 16.5 f = 100 kHz 11.8 8.58 µVpp 0.0003 % en Equivalent input noise voltage ∫en Low-frequency peak-topeak input noise Bandwidth: f = 0.1 to 10 Hz THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL = 10 kΩ, Vout = 4 Vrms tS Max. Setting time V/μs Gain = 1, 100 mV input voltage, 0.1 % of final value 245 Gain = 1, 100 mV input voltage, 1 % of final value 178 nV√Hz ns Shutdown characteristics (TSX920 and TSX923 only) ICC_shdn Supply current in shutdown mode (per amplifier) SHDN = VCC- 7 15 µΑ Tmin < Top < Tmax 20 ton Amplifier turn-on time 1.5 toff Amplifier turn-off time 0.2 µs Notes: (1) Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.5: "Long term input offset voltage drift"). (2) When used in comparator mode, with high differential input voltage, during a long period of time with VCC close to 16 V and Vicm>VCC/2, Vio can experience a permanent drift of a few mV drift. This phenomenon is notably worse at low temperatures. 10/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 4 Electrical characteristic curves Electrical characteristic curves Figure 2: Supply current vs.supply voltage Figure 3: Distribution of input offset voltage at VCC = 4.5 V Figure 4: Distribution of input offset voltage at VCC = 10 V Figure 5: Distribution of input offset voltage at VCC = 16 V Figure 6: Input offset voltage vs. temperature at VCC = 16 V Figure 7: Distribution of input offset voltage drift over temperature DocID024310 Rev 4 11/32 Electrical characteristic curves TSX920, TSX921, TSX922, TSX923 Figure 8: Input offset voltage vs. common-mode voltage at VCC = 4 V Figure 9: Input offset voltage vs. common-mode voltage at VCC = 16 V Figure 10: Output current vs. output voltage at VCC = 4 V Figure 11: Output current vs. output voltage at VCC = 10 V Figure 12: Output current vs. output voltage at VCC = 16 V Figure 13: Output rail linearity 12/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Electrical characteristic curves Figure 14: Open loop gain vs. frequency Figure 15: Bode diagram vs. temperature for VCC = 4 V Figure 16: Bode diagram vs. temperature for VCC = 10 V Figure 17: Bode diagram vs. temperature for VCC = 16 V Figure 18: Bode diagram at VCC = 16 V with low common-mode voltage Figure 19: Bode diagram at VCC = 16 V with high common-mode voltage DocID024310 Rev 4 13/32 Electrical characteristic curves TSX920, TSX921, TSX922, TSX923 Figure 20: Bode diagram at VCC = 16 V and RL = 10 kΩ, CL = 47 pF Figure 21: Bode diagram at VCC = 16 V and RL = 10 kΩ, CL = 120 pF Figure 22: Bode diagram at VCC = 16 V and RL = 2.2 kΩ, CL = 20 pF Figure 23: Slew rate vs. supply voltage and temperature Figure 24: Overshoot vs. capacitive load without feedback capacitor Figure 25: Closed loop gain vs. frequency with different gain resistors 14/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Electrical characteristic curves Figure 26: Large step response Figure 27: Small step response Figure 28: Small step response with feedback capacitor CF Figure 29: Output impedance vs. frequency in closed loop configuration Figure 30: Noise vs. frequency with 16 V supply voltage Figure 31: 0.1 to 10 Hz noise DocID024310 Rev 4 15/32 Electrical characteristic curves TSX920, TSX921, TSX922, TSX923 Figure 32: THD+N vs. frequency at VCC = 16 V Figure 33: THD+N vs. output voltage at VCC = 16 V Figure 34: Power supply rejection ratio (PSRR) vs. frequency Figure 35: Crosstalk vs. frequency between operators on TSX922 at VCC = 16 V Figure 36: Startup time after standby released for VCC = 4 V Figure 37: Startup time after standby released for VCC = 16 V 16/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Application information 5 Application information 5.1 Operating voltages The TSX92x operational amplifiers can operate from 4 V to 16 V. The parameters are fully specified at 4.5 V, 10 V, and 16 V power supplies. However, parameters are very stable in the full VCC range. Additionally, main specifications are guaranteed in the extended temperature range from -40 to 125 °C. 5.2 Rail-to-rail input The TSX92x series is designed with two complementary PMOS and NMOS input differential pairs. The device has a rail-to-rail input and the input common mode range is extended from (VCC-) - 0.1 V to (VCC+) + 0.1 V. However, the performance of this device is clearly optimized for the PMOS differential pairs (which means from (V CC-) - 0.1 V to (VCC+) - 2 V). Beyond (VCC+) - 2 V, the operational amplifier is still functional but with downgraded performances (see Figure 19). Performances are still suitable for a large number of applications requiring the rail-to-rail input feature. The TSX92x operational amplifiers are designed to prevent phase reversal. 5.3 Input pin voltage range The TSX92x operational amplifiers have internal ESD diode protections on the inputs. These diodes are connected between the input and each supply rail to protect MOSFETs inputs from electrostatic discharges. Thus, if the input pin voltage exceeds the power supply by 0.5 V, the ESD diodes become conductive and excessive current could flow through them. To prevent any permanent damage, this current must be limited to 10 mA. This can be done by adding a resistor in series with the input pin (Figure 38: "Limiting input current with a series resistor"). The resistor value has to be calculated for a 10 mA current limitation on the input pins. Figure 38: Limiting input current with a series resistor DocID024310 Rev 4 17/32 Application information 5.4 TSX920, TSX921, TSX922, TSX923 Input offset voltage drift over temperature The maximum input voltage drift over the temperature variation is defined as the offset variation related to offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using Equation 1. Equation 1 ∆Vio V T – Vio 25 °C = max io ∆T T – 25 °C with T = -40 °C and 125 °C. The datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a Cpk (process capability index) greater than 2. 5.5 Long term input offset voltage drift To evaluate product reliability, two types of stress acceleration are used: Voltage acceleration, by changing the applied voltage Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 AFV = e β . V S – VU Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 AFT = e Ea 1 1 ------ . – k TU TS Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate 18/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 Application information -5 -1 k is the Boltzmann constant (8.6173 x 10 eV.K ) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF = AFT × AFV AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. Equation 5 Months = AF × 1000 h × 12 months / 24 h × 365.25 days To evaluate the op amp reliability, a follower stress condition is used where VCC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 VCC = maxVop with Vicm = VCC 2 The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 ∆Vio = Vio dr ift month s Where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration. DocID024310 Rev 4 19/32 Application information 5.6 TSX920, TSX921, TSX922, TSX923 Capacitive load Driving a large capacitive load can cause stability issues. Increasing the load capacitance produces gain peaking in the frequency response, with overshooting and ringing in the step response. It is usually considered that with a gain peaking higher than 2.3 dB the op-amp might become unstable. Generally, the unity gain configuration is the worst configuration for stability and the ability to drive large capacitive loads. Figure 39: "Stability criteria with a serial resistor" shows the serial resistor (Riso) that must be added to the output, to make the system stable. Figure 39: Stability criteria with a serial resistor Figure 40: Test configuration for Riso 20/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 5.7 Application information High-side current sensing TSX92x rail to rail input devices can be used to measure a small differential voltage on a high side shunt resistor and translate it into a ground referenced output voltage. The gain is fixed by external resistance. Figure 41: High-side current sensing configuration Vout can be expressed as follows: Equation 8 Vou t = Rshun t × I 1 – Rg2 Rg2 + Rf2 1+ Rg2 × Rf2 Rf1 Rf1 Rf1 + Ip – l n × Rf1 – Vio 1 + × 1+ R R Rg1 Rg1 Rg1 g2 + f2 Assuming that Rf2 = Rf1 = Rf and Rg2 = Rg1 = Rg, Equation 8 can be simplified as follows: Equation 9 Vout = Rshunt × I Rf Rf – Vio 1 + + Rf × I io Rg Rg With the TSX92x operational amplifiers, the high side current measurement must be made by respecting the common mode voltage of the amplifier: (VCC-) - 0.1 V to (VCC+) + 0.1 V. If the application requires a higher common voltage please refer to the TSC high side current sensing family. DocID024310 Rev 4 21/32 Application information 5.8 TSX920, TSX921, TSX922, TSX923 High-speed photodiode The TSX92x series is an excellent choice for current to voltage (I-V) conversions. Due to the CMOS technology, the input bias currents are extremely low. Moreover, the low noise and high unity-gain bandwidth of the TSX92x operational amplifiers make them particularly suitable for high-speed photodiode preamplifier applications. The photodiode is considered as a capacitive current source. The input capacitance, C IN, includes the parasitic input Common mode capacitance, CCM (3pF), and the input differential mode capacitance, CDIFF (8pF). CIN acts in parallel with the intrinsic capacitance of the photodiode, CD. At higher frequencies, the capacitors affect the circuit response. The output capacitance of a current sensor has a strong effect on the stability of the op-amp feedback loop. CF stabilizes the gain and limits the transimpedance bandwidth. To ensure good stability and to obtain good noise performance, CF can be set as shown in Equation 10. Equation 10 where, CIN = CCM + CDIFF = 11 pF CDIFF is the differential input capacitance: 8 pF typical CCM is the Common mode input capacitance: 3 pF typical CD is the intrinsic capacitance of the photodiode CSMR is the parasitic capacitance of the surface mount RF resistor: 0.2 pF typical FGBP is the gain bandwidth product: 10 MHz at 16 V RF fixes the gain as shown in Equation 11. Equation 11 VOUT = RF x ID Figure 42: High-speed photodiode 22/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 6 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID024310 Rev 4 23/32 Package information 6.1 TSX920, TSX921, TSX922, TSX923 SOT23-5 package information Figure 43: SOT23-5 package outline Table 7: SOT23-5 mechanical data Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. 0.90 1.20 1.45 0.035 0.047 0.057 A2 0.90 1.05 1.30 0.035 0.041 0.051 B 0.35 0.40 0.50 0.014 0.016 0.020 C 0.09 0.15 0.20 0.004 0.006 0.008 D 2.80 2.90 3.00 0.110 0.114 0.118 A A1 24/32 Inches 0.15 0.006 D1 1.90 0.075 e 0.95 0.037 E 2.60 2.80 3.00 0.102 0.110 0.118 F 1.50 1.60 1.75 0.059 0.063 0.069 L 0.10 0.35 0.60 0.004 0.014 0.024 K 0 degrees 10 degrees 0 degrees DocID024310 Rev 4 10 degrees TSX920, TSX921, TSX922, TSX923 6.2 Package information SOT23-6 package information Figure 44: SOT23-6 package outline Table 8: SOT23-6 mechanical data Dimensions Ref. Millimeters Min. A Typ. 0.90 A1 Inches Max. Min. 1.45 0.035 Typ. Max. 0.057 0.10 0.004 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.013 0.019 c 0.09 0.20 0.003 0.008 D 2.80 3.05 0.110 0.120 E 1.50 1.75 0.060 0.069 e 0.95 0.037 H 2.60 3.00 0.102 0.118 L 0.10 0.60 0.004 0.024 θ 0° 10 ° 0° 10 ° DocID024310 Rev 4 25/32 Package information 6.3 TSX920, TSX921, TSX922, TSX923 MiniSO8 package information Figure 45: MiniSO8 package outline Table 9: MiniSO8 mechanical data Dimensions Ref. Millimeters Min. Typ. A Max. Min. Typ. 1.1 A1 0 A2 0.75 b Max. 0.043 0.15 0 0.95 0.030 0.22 0.40 0.009 0.016 c 0.08 0.23 0.003 0.009 D 2.80 3.00 3.20 0.11 0.118 0.126 E 4.65 4.90 5.15 0.183 0.193 0.203 E1 2.80 3.00 3.10 0.11 0.118 0.122 0.80 0.016 e L 0.85 0.65 0.40 0.60 0.006 0.033 0.024 0.95 0.037 L2 0.25 0.010 ccc 0° 0.037 0.026 L1 k 26/32 Inches 8° 0.10 DocID024310 Rev 4 0° 0.031 8° 0.004 TSX920, TSX921, TSX922, TSX923 6.4 Package information SO8 package information Figure 46: SO8 package outline Table 10: SO8 mechanical data Dimensions Ref. Millimeters Min. Typ. A Inches Max. Min. Typ. 1.75 0.069 A1 0.10 A2 1.25 b 0.28 0.48 0.011 0.019 c 0.17 0.23 0.007 0.010 D 4.80 4.90 5.00 0.189 0.193 0.197 E 5.80 6.00 6.20 0.228 0.236 0.244 E1 3.80 3.90 4.00 0.150 0.154 0.157 e 0.25 Max. 0.004 0.010 0.049 1.27 0.050 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 L1 k ccc 1.04 1° 0.040 8° 0.10 DocID024310 Rev 4 1° 8° 0.004 27/32 Package information 6.5 TSX920, TSX921, TSX922, TSX923 DFN8 2x2 package information Figure 47: DFN8 2x2 package outline Table 11: DFN8 2x2 mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 D 2.00 0.079 E 2.00 0.079 e 0.50 0.020 L 0.045 0.55 0.65 N 28/32 0.018 8 DocID024310 Rev 4 0.022 0.026 TSX920, TSX921, TSX922, TSX923 6.6 Package information MiniSO10 package information Figure 48: MiniSO10 package outline Table 12: MiniSO-10 package mechanical data Dimensions Ref. Millimeters Min. Typ. A Inches Max. Min. Typ. 1.10 Max. 0.043 A1 0.05 0.10 0.15 0.002 0.004 0.006 A2 0.78 0.86 0.94 0.031 0.034 0.037 b 0.25 0.33 0.40 0.010 0.013 0.016 c 0.15 0.23 0.30 0.006 0.009 0.012 D 2.90 3.00 3.10 0.114 0.118 0.122 E 4.75 4.90 5.05 0.187 0.193 0.199 E1 2.90 3.00 3.10 0.114 0.118 0.122 e L 0.50 0.40 L1 k aaa 0.55 0.020 0.70 0.016 6° 0° 0.95 0° 3° 0.022 0.028 0.037 0.10 DocID024310 Rev 4 3° 6° 0.004 29/32 Ordering information 7 TSX920, TSX921, TSX922, TSX923 Ordering information Table 13: Order codes Order code Temperature range TSX920ILT (1) SΟΤ23-5 (1) SO8 TSX922IDT TSX922IYDT Packing SOT23-6 TSX921ILT TSX921IYLT Package -40 °C to 125 °C TSX922IST TSX922IQ2T MiniSO8 Marking K304 K305 TSX922I Tape and reel SX922IY K305 DFN8 2x2 K26 TSX922IYST (1) MiniSO8 (automotive grade) K312 TSX922IYDT (1) SO8 (automotive grade) SX922IY MiniSO10 K305 TSX923IST Notes: (1) Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 & Q 002 or equivalent. 30/32 DocID024310 Rev 4 TSX920, TSX921, TSX922, TSX923 8 Revision history Revision history Table 14: Document revision history Date Revision 12-Apr-2013 1 Initial release 2 Added TSX920,TSX922, TSX923 devices. Added packages for TSX920,TSX922, and TSX923. Added shutdown characteristics in Table 4, Table 5, and Table 6. Added Figure 35, Figure 36, and Figure 37. Updated Table 13 for new order codes. 3 Added long-term input offset voltage drift parameter in Table 4, Table 5, and Table 6. Added Section 5.4: Input offset voltage drift over temperature in Section 5: Application information. Added Section 5.5: Long-term input offset voltage drift section in Section 5: Application information. 27-Jun-2013 10-Dec-2013 14-Jan-2016 4 Changes Updated document layout Table 4, Table 5, and Table 6: updated Vio and DVio/DT parameters Table 7: updated inches dimension "B" (typ) and "L" (typ and max) to align with rounded-off values of POA. Table 10: updated minimum mm dimensions for "k" Table 13: "Order codes": added order codes TSX922IYST and TSX922IYDT. DocID024310 Rev 4 31/32 TSX920, TSX921, TSX922, TSX923 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 32/32 DocID024310 Rev 4