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Final Product/Process Change Notification
Document # : FPCN20886
Issue Date: 29 April 2015
Title of Change:
SOD-123 devices Cu wire qualification at ON Semiconductor, Leshan, China facility.
Proposed first ship date:
5 August 2015
Contact information:
Contact your local ON Semiconductor Sales Office or <[email protected] >
Samples:
Contact your local ON Semiconductor Sales Office
Additional Reliability Data:
Contact your local ON Semiconductor Sales Office or <[email protected] >
Type of notification:
This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior
to implementation of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in
writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
Change Part Identification:
At the expiration of this FPCN devices will be assembled with Cu Wire at ON Semiconductor’s existing Leshan
facility. Devices with Cu Wire will have date code of WW31, 2015 or later.
Change category(s):
Wafer Fab Change
Assembly Change
Test Change
Sites Affected:
All site(s)
not applicable
ON Semiconductor site(s) :
External Foundry/Subcon site(s):
Manufacturing Site Change/Addition
Manufacturing Process Change
Material Change
Site 1
Product specific change
Datasheet/Product Doc change
Shipping/Packaging/Marking
Other: _______________________
Site 2
ON Leshan, China
Description and Purpose:
ON Semiconductor is pleased to announce the completion of Cu Wire qualification for the impacted devices at ON Semiconductor’s Leshan,
China facility.
The impacted devices are currently assembled at the ON Semiconductor Leshan, China facility with Au Wire. At the expiration of this PCN,
these devices will be built with Cu Wire at the same site. There is no change in package outline or electrical performance of the parts they
continue to fully meet datasheet specifications.
Reliability Data Summary:
Qual vehicle :
BAT54T1G
Test
Interval
Results
HTRB
Tj=150C or operating Tj 80% V bias (JA108)
Condition
1008 Hrs
0/231
HTSL
Ta=150C, or 175C based on datasheet max TA storage
1008 Hrs
0/231
IOL
Ta=+25°C, deltaTj=100°C max, 2min on/off for 15000 cyc
15000
Cycle
0/231
TC
Temp = -65°C to +150°C; for 1000 cycles (JA104B)
1000 Cycle
0/231
AC
Temp = +121°C; RH =100%, (JA110)
96 Hrs
0/231
H3TRB
Temp = +85°C; RH = 85%, 80% V bias (JA101)
1008 Hrs
0/231
RSH
TS=260C, Tdwell=10 sec. (Jedec B-106)
TEM001092 Rev. D
0/90
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Final Product/Process Change Notification
Document # : FPCN20886
Issue Date: 29 April 2015
MMSD103T1G
Test
Condition
Interval
Results
HTRB
Tj=150C or operating Tj 80% V bias (JA108)
1008 Hrs
0/231
HTSL
Ta=150C, or 175C based on datasheet max TA storage
1008 Hrs
0/231
IOL
Ta=+25°C, deltaTj=100°C max, 2min on/off for 15000 cyc
15000Cycle
0/231
TC
Temp = -65°C to +150°C; for 1000 cycles (JA104B)
1000 Cycle
0/231
AC
Temp = +121°C; RH =100%, (JA110)
96 Hrs
0/231
H3TRB
Temp = +85°C; RH = 85%, 80% V bias (JA101)
1008 Hrs
0/231
RSH
TS=260C, Tdwell=10 sec. (Jedec B-106)
0/90
Electrical Characteristic Summary:
Electrical Characteristics are not impacted.
List of Affected Standard Parts:
MMSD301T1G
MMSD701T1G
MMSD4148T3G
MMSD4148T1G
TEM001092 Rev. D
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