Previous Datasheet Index Next Data Sheet Bulletin I25167/B ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AC (TO-94) Threaded studs UNF 1/2 - 20UNF2A Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST110S Units 110 A 90 °C 175 A @ 50Hz 2700 A @ 60Hz 2830 A @ 50Hz 36.4 KA2s @ 60Hz 33.2 KA2s 400 to 1600 V 100 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2 t V DRM /V RRM tq TJ typical To Order case style TO-209AC (TO-94) Previous Datasheet Index Next Data Sheet ST110S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code ST110S V DRM /V RRM, max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IDRM /I RRM max. @ TJ = TJ max mA 20 On-state Conduction Parameter I T(AV) 110 A @ Case temperature 90 °C 175 A Max. peak, one-cycle 2700 non-repetitive surge current 2830 I t 2 Maximum I t for fusing t = 8.3ms reapplied t = 10ms 100% VRRM 2380 t = 8.3ms reapplied Sinusoidal half wave, 36.4 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied A KA2s 25.8 23.5 I √t Maximum I √t for fusing 2 V T(TO)1 Low level value of threshold KA √s 2 364 V 0.92 (I > π x IT(AV)),TJ = T J max. 1.79 (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. 0.90 voltage V T(TO)2 High level value of threshold DC @ 85°C case temperature No voltage 33.2 2 180° conduction, half sine wave t = 10ms 2270 2 Units Conditions Max. average on-state current I T(RMS) Max. RMS on-state current I TSM ST110S mΩ (I > π x IT(AV) ),TJ = TJ max. 1.81 slope resistance V TM Max. on-state voltage 1.52 IH Maximum holding current 600 IL Typical latching current 1000 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse mA T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Units Conditions Max. non-repetitive rate of rise of turned-on current td ST110S Typical delay time 500 A/µs Gate current 1A, di g /dt = 1A/µs 2.0 µs tq Typical turn-off time Gate drive 20V, 20Ω, tr ≤ 1µs TJ = TJ max, anode voltage ≤ 80% VDRM 100 To Order Vd = 0.67% VDRM, TJ = 25°C ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Previous Datasheet Index Next Data Sheet ST110S Series Blocking Parameter dv/dt Maximum critical rate of rise of IRRM IDRM Max. peak reverse and off-state leakage current ST110S Units Conditions 500 off-state voltage V/µs TJ = TJ max. linear to 80% rated VDRM 20 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST110S Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 1 2.0 Maximum peak negative VGT A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, t ≤ 5ms p 5.0 gate voltage IGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 20 gate voltage -VGM W 5 PG(AV) Maximum average gate power IGM Units Conditions TYP. MAX. DC gate current required 180 - to trigger 90 150 40 - TJ = 125°C DC gate voltage required 2.9 - TJ = - 40°C to trigger 1.8 3.0 1.2 - TJ = - 40°C mA V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST110S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, case to heatsink T Mounting torque, ± 10% °C 0.195 junction to case RthCS Max. thermal resistance, Units Conditions DC operation K/W 0.08 Mounting surface, smooth, flat and greased 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight Case style 130 g TO - 209AC (TO-94) To Order See Outline Table Previous Datasheet Index Next Data Sheet ST110S Series ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.035 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 11 0 S 16 P 0 V 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 20UNF threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 9 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) To Order 9 Previous Datasheet Index Next Data Sheet ST110S Series Outline Table GLASS METAL SEAL M IN . 16.5 (0.65) MAX. 2.6 (0.10) MAX. (0 . 3 7) 8.5 (0.33) DIA. 9) MI N. 9.5 4.3 (0.17) DIA (0. 7 FLEXIBLE LEAD 20 C.S. 16mm 2 (.025 s.i.) C.S. 0.4 mm 2 Fast-on Terminals (.0006 s.i.) 170 (6.69) RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 215 (8.46) 10 (0.39) RED SHRINK WHITE SHRINK MAX. 23.5 (0.93) MAX. DIA. 21 (0.83) SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) MAX. All dimensions in millimeters (inches) CERAMIC HOUSING 16.5 (0.65) MAX. 8.5 (0.33) DIA. 7) MI N. 2.6 (0.10) MAX. C.S. 16mm 2 C.S. 0.4 mm 2 (.0006 s.i.) 170 (6.69) RED SILICON RUBBER (.025 s.i.) RED CATHODE WHITE GATE RED SHRINK WHITE SHRINK MAX. 21 (0.83) SW 27 1/2"-20UNF-2A 29.5 (1.16) To Order 10 (0.39) 22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX. 29 (1.14) MAX. 70 (2.75) MIN. 215 (8.46) MAX. MI N. (0. 7 20 FLEXIBLE LEAD 9) 9.5 (0.3 4.3 (0.17) DIA 157 (6.18) 12.5 (0.49) MAX. 29 (1.14) MAX. 70 (2.75) MIN. 157 (6.18) RED SILICON RUBBER Previous Datasheet Index Next Data Sheet ST110S Series Outline Table GLASS-METAL SEAL FLAG TERMINALS 23.5 DIA. 5.2 (0.20) DIA. (0.93) MAX. (0.39) 10 29 (1.14) MAX. (0.30) MAX. MAX. 21(0.83) 7.5 1/2"-20UNF-2A 16.5 (0.65) SW 27 Case Style TO-208AD (TO-83) 2.4 (0.09) 29.5 (1.16) All dimensions in millimeters (inches) CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. 5.2 (0.20) DIA. (0.89) MAX. 29 (1.14) MAX. 2.4 (0.09) 29.5 (1.16) (0.65) 16.5 SW 27 1/2"-20UNF-2A To Order 10 (0.39) 7.5 (0.30) MAX. 21(0.83) MAX. 12.5 (0.49) 49 (1.93) 10 (0.39) 1.5 (0.06) DIA. 46 (1.81) 12.5 (0.49) 49 (1.93) 46 (1.81) 10 (0.39) 1.5 (0.06) DIA. Previous Datasheet Index Next Data Sheet Maximum Allowab le Case Temperature (°C) 130 ST110S Series RthJC (DC) = 0.195 K/ W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 180° 80 0 20 40 60 80 100 120 130 ST110SSeries RthJC (DC) = 1.95 K/ W 120 110 Conduction Period 30° 100 60° 90 90° 120° 180° 80 0 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 160 A .1 =0 W K/ elt -D RMSLimit S R th K/ W 0. 5K /W 0.6 K/ W W K/ 100 0. 2 120 0. 4 W K/ 180° 120° 90° 60° 30° 3 0. 0.8 K/ W 1K /W 60 Conduction Angle R 80 a Maximum Average On-state Power Loss (W) Fig. 1 - Current Ratings Characteristics 140 1.2 K/ W 40 ST110SSeries TJ = 125°C 20 0 0 20 40 60 80 100 25 120 Avera ge On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-state Power Loss Characteristics 220 1.2 K/ 40 R Conduction Period 60 ta 80 K/ W 0. 4K /W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W el -D 100 RMSLimit /W 1K 0. 120 = 140 0.3 A hS R t 160 W K/ 180 2 0. DC 180° 120° 90° 60° 30° 200 W ST110SSeries TJ = 125°C 20 0 0 20 40 DC 20 40 60 80 100 120 140 160 180 Averag e On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) ST110S Series 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Amb ient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics To Order Previous Datasheet Index Next Data Sheet Peak Half Sine Wave On-state Current (A) 2400 At Any Rated Load Condition And With Rated VRRM App lied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 2200 2000 1800 1600 1400 1200 ST110S Series 1000 1 10 100 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 2600 Of Conduction May Not Be Maintained. 2400 Initial TJ = 125°C No Voltage Reapplied 2200 Rated VRRMReapplied 2000 1800 1600 1400 1200 ST110S Series 1000 0.01 0.1 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Insta ntaneous On-state Current (A) 10000 TJ = 25°C 1000 TJ = 125°C 100 ST110S Series 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Tra nsie nt Therma l Imp ed a nc e Z thJC (K/ W) Peak Half Sine Wa ve On-state Current (A) ST110S Series 1 St ea dy Sta te Va lue R thJC = 0.195 K/ W (DC Ope ra tion) 0.1 0.01 ST110S Se rie s 0.001 0.001 0.01 0.1 1 10 Sq ua re Wa ve Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic To Order Previous Datasheet Index Next Data Sheet ST110S Series Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0.1 0.001 0.01 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) 1 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics To Order (3) (4) Frequenc y Limited by PG(AV) Device: ST110SSeries 0.1 (2) 10 100