Product Overview NGTB40N120FL2: IGBT 1200V 40A FS2 Solar/UPS For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 µs Short Circuit Capability Applications End Products • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding • Welders • UPS Systems • PV Inverters Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTB40N120FL2WG Pb-free NEW 1200 2 1.1 3.4 240 18 313 10 535 Yes 40 2 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247