Product Overview NGTB40N120FL3: Ultra Field Stop IGBT -1200V 40A For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • • Extremely Efficient Trench with Ultra Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb-Free Devices Applications End Products • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding • Industrial Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) NGTB40N120FL3WG Pb-free NEW 1200 1.7 1.1 1.6 86 12 212 40 3 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 454 Yes TO247