Product Overview

Product Overview
NGTB50N120FL2WA: 1200 V Field Stop II IGBT, 50 A
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides
superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In
addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to
standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast
co-packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Applications
End Products
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
• Industrial
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
NGTB50N120FL2WAG
Pb-free
NEW
1200
2.25
1.4
2.15
281
17
313
50
2.18
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
Yes
TO247
4Lead