Product Overview

Product Overview
NGTB40N120L3: Ultra Field stop IGBT - 1200V 40A, Low VCEsat
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
motor driver applications. Incorporated into the device is a soft and fast
co-packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
•
Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
These are Pb-Free Devices
Applications
End Products
• Motor Drive Inverter
• Industrial Switching
• Welding
• Industrial
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
NGTB40N120L3WG
Pb-free
NEW
1200
1.55
1.5
1.5
86
12
220
40
3
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
454
Yes
TO247