NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com Features • • • • • • 30 A, 1200 V VCEsat = 1.70 V Eoff = 1.4 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat 10 ms Short Circuit Capability These are Pb−Free Devices C Typical Applications • Motor Drive Inverter • Industrial Switching • Welding G E ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC A 60 30 G C Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM 120 A Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 120 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD A 60 30 W 534 267 10 ms TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Operating junction temperature range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 0 MARKING DIAGRAM 30N120L2 AYWWG TSC Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TO−247 CASE 340AL E 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N120L2WG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N120L2W/D NGTB30N120L2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.85 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCEsat − − 1.70 2.07 1.90 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 1.0 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7500 − pF Coes − 200 − Cres − 140 − Qg − 310 − Qge − 61 − Qgc − 150 − td(on) − 116 − tr − 35 − td(off) − 285 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V tf − 175 − Eon − 4.4 − Turn−off switching loss Eoff − 1.4 − Total switching loss Ets − 5.8 − Turn−on delay time td(on) − 110 − Turn−on switching loss Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V tr − 36 − td(off) − 300 − ns mJ ns tf − 331 − Eon − 5.5 − Turn−off switching loss Eoff − 2.5 − Total switching loss Ets − 8.0 − VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 175°C VF − − 1.50 1.40 1.70 − V TJ = 25°C IF = 30 A, VR = 400 V diF/dt = 200 A/ms trr − 450 − ns Qrr − 7.85 − mc Irrm − 32 − A Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current http://onsemi.com 2 NGTB30N120L2WG TYPICAL CHARACTERISTICS 120 120 VGE = 20 V to 13 V 100 TJ = 150°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 11 V 80 10 V 60 40 9V 20 7V 8V 0 1 2 3 4 5 7 6 11 V 80 60 10 V 40 9V 20 8V 7V 0 8 1 2 3 4 5 7 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 120 8 120 VGE = 20 V to 13 V 100 IC, COLLECTOR CURRENT (A) TJ = −55°C 11 V 80 60 10 V 40 20 7V 9V 8V 0 0 1 2 3 4 5 6 7 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 0 8 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.50 100000 TJ = 25°C 3.00 IC = 60 A 2.50 IC = 30 A 2.00 IC = 15 A 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 100 0 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V Cies 10000 1000 Coes 100 Cres 10 0.50 0.00 −75 −50 −25 1 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs TJ Figure 6. Typical Capacitance http://onsemi.com 3 90 100 NGTB30N120L2WG TYPICAL CHARACTERISTICS 16 60 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 TJ = 25°C 50 TJ = 150°C 40 30 20 10 0 14 12 VCE = 600 V 10 8 6 4 VCE = 600 V VGE = 15 V IC = 30 A 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 50 100 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 7 250 200 150 1000 6 SWITCHING TIME (ns) SWITCHING LOSS (mJ) Eon 5 4 3 Eoff 2 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 1 0 0 20 40 60 80 100 120 140 tf 100 td(on) tr VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 10 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 18 16 14 SWITCHING TIME (ns) 20 SWITCHING LOSS (mJ) td(off) Eon 12 10 8 Eoff 6 4 td(off) tf td(on) 100 tr VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2 0 5 15 25 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 75 85 NGTB30N120L2WG TYPICAL CHARACTERISTICS 10000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A SWITCHING LOSS (mJ) 12 10 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A Eon SWITCHING TIME (ns) 14 8 6 Eoff 4 1000 td(off) td(on) tf 100 tr 2 0 5 15 25 35 55 45 65 75 10 5 85 15 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 9 7 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 8 Eon 6 5 4 Eoff 3 VGE = 15 V TJ = 150°C IC = 30 A Rg = 10 W 2 1 0 350 400 450 500 550 600 650 700 750 800 tf td(on) 100 tr VGE = 15 V TJ = 150°C IC = 30 A 10 Rg = 10 W 350 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) td(off) 50 ms 10 dc operation 100 ms 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 VGE = 15 V, TC = 125°C 1 100 1000 1 10000 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N120L2WG TYPICAL CHARACTERISTICS 140 VCE = 600 V, RG = 10 W, VGE = 0/15 V TC = 80°C 120 Ipk (A) 100 80 60 40 TC = 110°C 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 19. Collector Current vs. Switching Frequency SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJA = 0.277 50% Duty Cycle 0.1 20% 10% 5% 0.01 R1 Junction R2 Rn Case 2% C1 0.001 1E−05 Ci (J/°C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E−06 Cn C2 Ri (°C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.01 0.001 0.1 1 ON−PULSE WIDTH (s) Figure 20. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.848 50% Duty Cycle 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn 5% 2% Single Pulse 0.01 1E−06 1E−05 0.001 0.062512 0.01 ON−PULSE WIDTH (s) Figure 21. Diode Transient Thermal Impedance http://onsemi.com 6 Ci (J/°C) 0.000058 0.014848 0.000446 0.001201 0.001565 0.002662 0.013330 0.051358 0.068631 0.124296 1.608971 0.145707 0.254415 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 Case Ri (°C/W) 0.017247 0.000213 0.022447 0.026328 0.063916 0.118778 0.075016 0.061573 0.1 1 NGTB30N120L2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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