Product Overview

Product Overview
NGTB30N135IHR1: IGBT 1350V 30A with Monolithic Free Wheeling Diode.
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on-state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Designed for High System Level Robustness
These are Pb-Free Devices
Applications
End Products
• Inductive Heating
• Consumer Appliances
• Soft Switching
• Industrial
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
NGTB30N135IHR1WG
Pb-free
Active
1350
2.4
0.63
30
1.7
Eon
Typ
(mJ)
Trr
Typ
(ns)
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
220
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
394
No
TO247