Product Overview NGTB30N135IHR1: IGBT 1350V 30A with Monolithic Free Wheeling Diode. For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on-state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications. Features • • • • • Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Designed for High System Level Robustness These are Pb-Free Devices Applications End Products • Inductive Heating • Consumer Appliances • Soft Switching • Industrial Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB30N135IHR1WG Pb-free Active 1350 2.4 0.63 30 1.7 Eon Typ (mJ) Trr Typ (ns) Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) 220 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 394 No TO247