NGTB30N135IHR1 D

NGTB30N135IHR1WG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
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Features
•
•
•
•
•
30 A, 1350 V
VCEsat = 2.4 V
Eoff = 0.63 mJ
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Designed for High System Level Robustness
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage @
TJ = 25°C
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Symbol
Value
Unit
VCES
1350
V
IC
A
60
30
ICM
G
C
120
A
IF
A
IFM
120
A
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
MARKING DIAGRAM
30N135IHR1
AYWWG
W
394
197
Operating junction temperature range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
September, 2015 − Rev. 0
E
60
30
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse, VGE = 0 V
© Semiconductor Components Industries, LLC, 2015
TO−247
CASE 340AL
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB30N135IHR1WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB30N135IHR1/D
NGTB30N135IHR1WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.38
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 5 mA
V(BR)CES
1350
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VCEsat
−
−
2.4
2.6
3.0
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1350 V
VGE = 0 V, VCE = 1350 V, TJ = 175°C
ICES
−
−
−
−
0.5
5.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Input capacitance
Cies
−
5530
−
pF
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
124
−
Cres
−
100
−
Qg
−
220
−
Qge
−
47
−
Qgc
−
100
−
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
200
−
tf
−
124
−
Eoff
−
0.63
−
mJ
TJ = 150°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
222
−
ns
tf
−
221
−
Eoff
−
1.50
−
mJ
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°C
VF
−
−
1.7
2.1
2.2
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 30 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
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2
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
80
10 V
60
40
9V
20
8V
7V
1
2
3
4
5
6
7
100
VGE = 20 to 13 V
80
10 V
60
9V
40
8V
20
7V
0
8
1
2
3
4
6
5
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
TJ = −55°C
10 V
60
40
9V
20
8V
0
1
2
3
4
8
120
11 V
VGE = 20 to 13 V
0
11 V
0
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
TJ = 150°C
100
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
11 V
TJ = 25°C
5
6
100
80
60
40
20
TJ = 25°C
TJ = 150°C
0
7
0
8
1
2
3
4
5
6
7
8
9
11 12 13
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.25
100000
IC = 40 A
3.00
2.75
IC = 30 A
2.50
IC = 20 A
2.25
2.00
−75 −50 −25
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
120
10000
Cies
1000
100
Coes
10
0
25
50
75
100 125 150 175 200
Cres
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
20
TJ = 25°C
90
IF, FORWARD CURRENT (A)
VGE, GATE−EMITTER VOLTAGE (V)
100
80
TJ = 150°C
70
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
18
16
14
12
10
8
6
VCE = 600 V
VGE = 15 V
IC = 30 A
4
2
0
0
4.0
50
100
200
150
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.25
250
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
2.00
1.75
Eoff
1.50
1.25
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
1.00
0.75
0.50
tf
100
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
10
0
20
40
60
80
100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
td(off)
Eoff
4
3
2
td(off)
tf
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
0
10
5
20
35
50
65
80
5
20
35
50
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
80
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
10000
5.0
SWITCHING LOSS (mJ)
4.0
3.5
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
4.5
3.0
2.5
Eoff
2.0
1.5
1.0
td(off)
1000
tf
100
0.5
0
10
5
15
25
35
45
55
75
65
5
25
35
45
55
65
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
75
85
1000
2.00
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
15
Rg, GATE RESISTOR (W)
2.25
Eoff
1.75
1.50
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.25
td(off)
tf
100
1.00
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
350 400 450
500
550
600
650
700
750
350 400 450
800
500
550
600
650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1 ms
100
100 ms
IC, COLLECTOR CURRENT (A)
1000
IC, COLLECTOR CURRENT (A)
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
2
20
VGE = 15 V, TC = 150°C
100
10
1
200
2000
1
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
1
R(t) (°C/W)
50% Duty Cycle
RqJC = 0.548
20%
0.1
10%
5%
Junction R1
2%
R2
Rn
Case
Ri (°C/W)
ti (sec)
0.0537
0.0350
0.0426
0.1183
0.1455
0.0191
0.0019
0.0090
0.0235
0.0267
0.0687
1.6573
0.01
Ci = ti/Ri
C1
0.001
0.000001
0.00001
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
C2
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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6
0.1
1
NGTB30N135IHR1WG
Figure 21. Definition of Turn On Waveform
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7
NGTB30N135IHR1WG
Figure 22. Definition of Turn Off Waveform
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8
NGTB30N135IHR1WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB30N135IHR1/D