Product Overview

Product Overview
NGTB45N60S1: IGBT 600 V/45 A - Welding
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co-packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5µ s Short-Circuit Capability
End Products
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB45N60S1WG
Pb-free
Active
600
2
0.53
1.25
70
7
125
5
300
Yes
45
2.45
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247