Product Overview NGTB50N65S1: IGBT FSII, 650V, 50A For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb-Free Devices Applications End Products • Welding • Industrial Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) NGTB50N65S1WG Pb-free NEW 650 2.1 0.53 1.25 70 11 128 50 2.65 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 300 Yes TO247