ICs for Communication Prescaler Circuit 2.1 GHz PMB 2314T V1.5 Preliminary Data Sheet 7.96 30%7 5HYLVLRQ+LVWRU\ 30%9 Previous Releases: Page 8 PMB 2314 V1.2 08.95 Subjects (changes since last revision) dynamic range errata sheet removed supply current values corrected 30%7 5HYLVLRQ+LVWRU\ 30%9 Previous Releases: Page PMB 2314 V1.3 11.95 Subjects (changes since last revision) internal cross talk eliminated by a metall mask redesign. Plug and play replacement of PMB 2314 V1.3 'DWD&ODVVLILFDWLRQ 0D[LPXP5DWLQJV Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. &KDUDFWHULVWLFV The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. 2SHUDWLQJ5DQJH In the operating range the functions given in the circuit description are fullfilled. For detailed technical information about “Processing Guidelines” and “Quality Assurance” for ICs, see our Product Overview “ICs for Communications” (GLWLRQ This edition was realized using the software system FrameMaker®. 3XEOLVKHGE\6LHPHQV$*%HUHLFK+DOEOHLWHU0DUNHWLQJ.RPPXQLNDWLRQ %DODQVWUDH'0QFKHQ © Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide. (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. 3UHVFDOHU&LUFXLW*+] 30%7 Preliminary Data Bipolar IC )XQFWLRQDO'HVFULSWLRQ$SSOLFDWLRQ The IC is designed for use in mobile radio communication devices up to 2100 MHz and upconversion systems up 2500 MHz. Due to its low power consumption and low phase noise generation it is suitable for the use in battery powered handheld systems, e.g. PCN, DECTand wireless LANs. Vignette 3'62 Low supply voltage down to 2.7V. It can be switched to a low-power standby mode. Internal current source at the emitter follower output. No external resistor needed in typical applications. The divide ratio is 1:64/65 or 1:128/129 depending on the external circuit configuration. Semiconductor Group 3 7.96 30%7 &LUFXLW'HVFULSWLRQ The differential inputs of the IC may be connected either balanced or single ended. In the latter case the unused input must be RF-grounded with a capacitor (about 10 pF) with a low serial inductance. Depending on the logic level at SW input the basic divide ratio of the ECL-stages is fixed to 1:64/65 or 1:128/129. The MOD input determines whether modulus 1:n or 1:n+1 (n=64 or 128 according to SW-level) is active. The IC can be switched to a low-power standby mode (input STB). The MOD input is TTL/CMOS compatible. The emitter follower output is CMOS compatible according to the application circuit on page 11. The minimum logic swing is 0.8 V pp. )XQFWLRQWDEOH ,QSXWSLQ 6: 02' 67% Semiconductor Group /RJLFOHYHO 3UHVFDOHUIXQFWLRQ HIGH = US-0.1 V to US LOW = GND to 0.8 V or open 1:64/65 1:128/129 HIGH = 2.0 V to US or open LOW = GND to 0.8 V 1:64/1:128 1:65/1:129 HIGH = US-0.1 V to US LOW = GND to 0.8 V Divider Q=HIGH, STANDBY-mode 4 7.96 30%7 3LQ$VVLJQPHQW Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 I1 1 8 I2 US 2 7 STB SW 3 6 MOD Q 4 5 GND RF-input I1 supply voltage US divide ratio 1:64/65 - 1:128/129 control input (SW) output Q GND modulus 1:n/n+1 (n=64 or 128) control input (MOD) standby mode control input (STB) RF-input I2 Semiconductor Group 5 7.96 30%7 US STB 2 7 Uref I2 4 8 Q 1:64/65 1:128/129 I1 1 I SW 3 6 MOD 5 GND %ORFN'LDJUDP Semiconductor Group 6 7.96 30%7 $EVROXWH0D[LPXP5DWLQJV 7A = -40 to 85 °C 3DUDPHWHU 6\PERO /LPLW9DOXHV 8QLW PLQ PD[ -0.3 6 V 2 V V Supply voltage 8S Input level (Pin 1; Pin 8) 8I Voltage swing (Pin 1 to 8) 8I18 -2 2 Input level (Pin 3; Pin 6; Pin 7) 8SW, 8MOD, 8STB, -0.3 8S+0.7V V or 5.5V if 8S+0.7V > 5.5V Output level (Pin 4) 8Q 8S V Outpu current (Pin 4) ,Q 5 mA Junction temperature 7j 125 °C Storage temperature 7S 125 °C Thermal resistance system-ambient 5thsa 185 K/W -65 5HPDUNV 8S=0V 8S=2.7...5.5V The maximum ratings may not be exceeded under any circumstances, not even momentarily and individually, as permanent damage to the IC will result. (6'LQWHJULW\DFFRUGLQJ0,/67''0HWK9 2SHUDWLQJ5DQJH 3DUDPHWHU 6\PERO /LPLW9DOXHV PLQ max. 8QLW Supply Voltage 8S 2.7 5.5 V Input frequency ƒ 100 2300 MHz Ambient temperature 7A -40 85 °C 5HPDUNV Within the operational range the IC operates as described in the circuit description. The AC / DC characteristic limits are not guaranteed. Semiconductor Group 7 7.96 30%7 $&'&&KDUDFWHULVWLFV 6XSSO\YROWDJH9S=2.7 to 5.5V $PELHQWWHPSHUDWXUH7A = -20 to 85 °C (refered to the test circuit) 3DUDPHWHU 6\PERO /LPLW9DOXHV PLQ W\S 8QLW 7HVW&RQGLWLRQ PD[ 6XSSO\&XUUHQW Supply current normal operation Supply current standby-mode ,S 2.7 3.3 mA inputs RF-grounded, 8S=2.7, 7A = 25 °C, STB= 9S output open ,S 2.8 3.4 mA inputs RF-grounded, 8S=4.0, 7A = 25 °C, STB= 9S output open ,S 2.9 3.5 mA inputs RF-grounded, 9S=5.5, 7A = 25 °C, STB= 9S output open 0.1 mA inputs RF-grounded, output open, STB = GND ,STB 5),QSXW,, Input level dynamic range 3in -20 4 dBm 100-1500MHz (sine wave) 3in -20 -3 dBm 2100 MHz ( diagram 2 ) 8Q 1 1.1 VPP &L <= 12pF, 5L=2kΩ 8Q 0.8 1.1 VPP &L <= 8pF 400 µA see block diagram 2XWSXW4 Output logic swing Internal current source , 'LYLGHU5DWLR&RQWURO,QSXW6: Voltage high 9SWH 9S-0.1 9S V Voltage low 9SWL GND 0.8 V Input current high ,SWH 60 µA Input current low ,SWL 30 µA SW=9S SW=GND 0RGXOXV&RQWURO,QSXW02' Voltage high 9MODH 2.3 9S V Voltage low 9MODL GND 0.8 V Input current high ,MODH 50 µA MOD=9S Input current low ,MODL 120 µA MOD=GND AC /DC characteristics involve the spread of values guaranteed within the specified suply voltage and ambient temperature range. Typical characteristics are the median of the production. Semiconductor Group 8 7.96 30%7 $&'&&KDUDFWHULVWLFV 6XSSO\YROWDJH9S=2.7 to 5.5V $PELHQWWHPSHUDWXUH7A = -20 to 85 °C (refered to the test circuit) 3DUDPHWHU 6\PERO /LPLW9DOXHV PLQ W\S 8QLW 7HVW&RQGLWLRQ PD[ 6WDQGE\0RGH&RQWURO,QSXW67% Voltage high 9STBH 8S-0.1 9S V Voltage low 9STBL GND 0.8 V Input current high ,STBH 30 µA STB=9S Input current low ,STBL 60 µA STB=GND 14 ns 'HOD\WLPHV MOD setup time Wset (diagram 1) 8 AC /DC characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. Typical characteristics are the median of the production. Semiconductor Group 9 7.96 30%7 7HVWFLUFXLW Input sensitivity and output logic swing measurement spectrum analyser GND 5 US 6 UMOD 7 Signal generator (50Ω) 4 30% 3 UQ USW 8 1n 1 US Scope US 2 USTB UI2 Frequency counter UI 1n RL Cload 1n 50Ω Cload <= 8pF inc. jig and instrument input capacitance RL only needed for enhanced driving capability. Semiconductor Group 10 7.96 30%7 $SSOLFDWLRQ&LUFXLW MOD &0263// GND 5 MOD 6 STB 7 I2 8 1nF 4 30% 3 2 1 Q F ca. 1nF SW US US TBB 206 PMB 2306 PMB 2307 PD I1 1n LF VCO (SW connected for 1:64/65 divider ratio) Semiconductor Group 11 7.96 30%7 'HILQLWLRQRI0RGXOXV6HWXS7LPH ≈ I MOD Wset ≈ Q Changes of the mod-level made up to this time will still affect the Q-output 'LDJUDP Semiconductor Group 12 7.96 30%7 ,QSXW'\QDPLF5DQJH PMB 2314 T V1.3 Dynamic Range 2.7V Ratio 65 Pin / [ dBm ] 20 10 0 Operating Window -10 -20 -30 -40 -50 0 500 1000 1500 f / [ MHz ] 2000 2500 'LDJUDP Semiconductor Group 13 7.96 30%7 3DFNDJH2XWOLQHV 3ODVWLF3DFNDJH3'62 5,2 max 5 0,7 0,19+0,06 1,75 max 1,45-0,2 4 -0,2 6±0,2 0,35+0,15 0,7 max 1,27 3,81 (Dual-in-Line-Package, Small-Outline) 20 A 8 DIN 41870 T16 (SMD) Semiconductor Group 14 7.96