INFINEON PMB2201

ICs for Communications
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz
PMB 2201 Version 1.2
Preliminary Data Sheet 08.97
Edition 08.97
Published by Siemens AG,
Bereich Halbleiter, MarketingKommunikation, Balanstraße 73,
81541 München
© Siemens AG 1995.
All Rights Reserved.
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or assemblies.
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characteristics.
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reserved.
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Group Offices in Germany or the Siemens
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(see address list).
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Group.
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Group of Siemens AG.
1 A critical component is a component used
in a life-support device or system whose
failure can reasonably be expected to
cause the failure of that life-support device
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Ausgabe 08.97
Herausgegeben von Siemens AG,
Bereich Halbleiter, MarketingKommunikation, Balanstraße 73,
81541 München
© Siemens AG 1995.
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Revision History
#
Subject
1
Thermal resistance
Preliminary Data
Sheet 5.95
Preliminary Data
Sheet 8.97
Page
Item
Page
Item
13
8
13
8
Change
Revised
2
ESD integrity
13
9
Added
3
Supply current
15
1
15
1
Revised
4
External DC voltage
at IF/IFX
15
4
15
4
Revised
5
Application Circuit
29
29
Revised
PMB 2201
Table of Contents
Page
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Applications: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Blocks with separate supply, ground and power down pins . . . . . . . . . . . . .11
Internal Input/Output Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
2
2.1
2.2
2.3
2.4
2.4.1
2.4.2
2.4.3
2.4.4
2.4.5
2.5
2.5.1
2.5.2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Operational Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
AC/DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
S-Parameters and Input/Output Impedances . . . . . . . . . . . . . . . . . . . . . . . . .19
Mixer Input RF/RFX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Mixer Input IF/IFX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Mixer Output MO/MOX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Modulator Input LO/LOX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Modulator Output E/EX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
3
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
Semiconductor Group
4
08.97
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz
Version 1.2
1
Overview
1.1
Features
Bipolar IC
• Direct quadrature modulator with separate
additional double balanced active mixer
• Direct quadrature modulation
•
LO frequency range from 800 MHz to 1.5 GHz
•
Generation of orthogonal carriers without
external elements and without trimming
•
•
•
•
•
•
•
•
•
•
•
PMB 2201
P-TSSOP-24
typ. 40 dB carrier rejection, typ. 44 dB SSB rejection
typ. 43 dB rejection of third order products at 1 Vpp A/B drive level at fLO = 1.5 GHz
3 dBm output power with appropriate output power matching network and at 1Vpp
A/B baseband drive level
Double balanced Gilbert cell mixer
RF and IF frequency range from DC to 2.5 GHz
typ. 39 dB carrier rejection
low noise
Supply voltage range from 2.7 V to 4.5 V
Power down mode
P-TSSOP-24 package
Temperature range -30° to 85°C
1.2
Applications:
• Vector modulated digital mobile cellular systems as GSM, PDC-800, PDC-1.5,
DAMPS etc.
• Various modulation schemes, such as PM, PSK, FSK, QAM, QPSK, GMSK etc.
• Analog systems with FM and AM modulation
• Space and power saving optimizations of existing discrete transmitter circuits
Type
Ordering Code
Package
PMB 2201
Q67006-A6137 (T+R)
P-TSSOP-24
Semiconductor Group
5
08.97
PMB 2201
1.3
Functional Description
The PMB2201 is a modulator and mixer circuit with high integration level. It includes a
direct quadrature modulator and a double balanced Gilbert cell mixer with according bias
circuitry.
The up/down conversion mixer combines two external signals at the RF and IF inputs.
The IF input is suited for the lower frequency signal because of its linear transfer function
to the mixer output. The higher frequency signal is fed to the RF input to switch the
Gilbert cell mixer. In a typical application the wanted mixer output product is bandpass
filtered and then fed to the modulator LO input. The mixer may also be used to convert
the modulator output signal from E/EX via the IF/IFX input by mixing with a local oscillator
signal RF/RFX to higher frequencies up to 2.5 GHz.
The modulator generates two orthogonal carriers which are mixed with the baseband
modulation signals A and B in Gilbert multipliers. The outputs of the Gilbert cells are
added and amplified by a linear output stage. The modulated signal is available at the
open collector output E,EX. The voltage TREF can be used for DC biasing of the
modulation inputs A, AX, B, BX externally.
The modulator and the mixer have separate power supplies and grounds. They can be
powered down independently. Due to the power down concept the modulator can be
used without or in conjunction with the up/down conversion mixer part.
For applications in the frequency range from 1.4GHz to 2.5GHz the derivative PMB2202
is offered.
Semiconductor Group
6
08.97
PMB 2201
1.4
Pin Configuration
(top view)
24
RFX
23
GND2
22
21
IF
MO
1
2
3
4
GND2
5
20
PD2
ADJ
6
GND1
LOX
7
19
18
E
LO
8
17
EX
PD1
16
VCC1
TREF
9
10
15
GND1
A
11
14
B
AX
12
13
BX
RF
VCC2
MOX
IFX
P-TSSOP-24
Semiconductor Group
7
08.97
PMB 2201
1.5
Pin No.
Pin Definitions and Functions
Symbol
Function
1
RF
RF input, base input
2
VCC2
Supply voltage for mixer
3
MOX
Mixer output inverted, open collector
4
MO
Mixer output, open collector
5,23
GND2
Ground for mixer
6
ADJ
Phase adjust input
7
LOX
Modulator LO input inverted
8
LO
Modulator LO input
9
PD1
Power down for modulator
10
TREF
DC bias voltage for modulation inputs A, AX, B, BX
11
A
Modulation input A
12
AX
Modulation input A inverted
13
BX
Modulation input B inverted
14
B
Modulation input B
15, 19
GND1
Ground for modulator
16
VCC1
Supply voltage for modulator
17
EX
Modulator output inverted, open collector
18
E
Modulator output, open collector
20
PD2
Power down for mixer
21
IFX
IF input inverted, emitter input
22
IF
IF input, emitter input
24
RFX
RF input inverted, base input
Semiconductor Group
8
08.97
PMB 2201
1.6
Functional Block Diagram
RF
1
RFX
VCC2
GND2
MOX
IF
MO
IFX
bias2
GND2
PD2
ADJ
GND1
LOX
E
f×2
EX
LO
PD1
bias1
VCC1
TREF
GND1
A
B
f÷2
AX
Semiconductor Group
BX
9
08.97
PMB 2201
1.7
Circuit Description
Block Level Description
The PMB2201 includes an up/down conversion mixer and a direct quadrature modulator
on one chip.
The mixer is a fully balanced Gilbert cell. The IF, IFX pins are low impedance inputs. The
transfer function from this input to the mixer output is linear for input levels below the 1dB
compression point. For improved intermodulation the mixer current can be increased
with external resistors to GND2 at IF, IFX. The RF, RFX pins are high impedance inputs
and are DC connected to the bases of the transistors in the Gilbert cell. The input level
at RF, RFX should be high enough to ensure proper switching of the differential
transistor pairs. The mixer output pins MO, MOX are high impedance open collector
outputs. The wanted mixer output product can be band pass filtered and fed to the
LO,LOX input of the modulator or to an external load.
The LO, LOX pins are the high impedance inputs of an emitter coupled differential pair.
The LO signal is internally divided into two orthogonal carriers at the transmit frequency.
The modulator has two Gilbert cell multipliers, in which the modulation signals A(t) and
B(t) are mixed with the orthogonal carriers. The outputs of both Gilbert cells are added
and amplified by a linear output stage. The modulated transmit signal is available at the
high impedance open collector outputs E/EX and can be fed to a power amplifier.
At the output TREF a DC voltage for biasing the modulation inputs A, AX, B, BX is
available, which should be capacitively decoupled to ground. The modulation inputs can
be connected externally via bias resistors to TREF. Due to the low voltage concept a
balanced drive of the differential modulator inputs is recommended to obtain the best
second and third order spurious suppression.
The phase adjust input ADJ allows the single sideband suppression of the modulator to
be optimized for a particular application. If the specified sideband suppression is
sufficient, ADJ should only be capacitively decoupled to ground, in which case the
voltage at ADJ is set internally to half the TREF voltage. If a higher suppression is
required, the voltage at ADJ can be adjusted to the optimum value by a pull-up resistor
to TREF, a pull-down resistor to GND1 or a potentiometer between TREF and GND1.
The modulator and the mixer have separate supply, ground and power down pins:
VCC1, GND1, PD1 for the modulator and VCC2, GND2, PD2 for the mixer. Applying a
logic LOW to PD1 or PD2 powers down the corresponding part of the chip, including its
bias circuitry. Depending on the application the power down pins can be combined or
separately fixed to supply rails.
Semiconductor Group
10
08.97
PMB 2201
1.8
Blocks with separate supply, ground and power down pins
RF
1
RFX
VCC2
GND2
MOX
IF
MO
IFX
bias2
GND2
PD2
ADJ
GND1
LOX
E
f×2
EX
LO
PD1
bias1
VCC1
GND1
TREF
B
A
f÷2
AX
BX
VCC2
GND2
PD2
VCC1
GND1
PD1
Semiconductor Group
11
08.97
PMB 2201
1.9
Internal Input/Output Circuits
RF
1
RFX
2kΩ
VCC2
2kΩ
bias2
GND2
800Ω
IF
MOX
IFX
MO
800Ω
200kΩ 200kΩ
GND2
ADJ
PD2
GND1
40kΩ
40kΩ
LOX
2kΩ
E
LO
2kΩ
EX
PD1
200kΩ 200kΩ
7kΩ
bias1
VCC1
TREF
GND1
A
B
AX
BX
Semiconductor Group
12
08.97
PMB 2201
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances, not even
momentarily and individually, as permanent damage to the IC will result.
#
Parameter
Sym Limit Values
bol
Min
Max
1
Supply Voltage
VCC
-0,5
4.5
2
Input Voltage
VIO
-0.5
VCC + 0.5 V
3
Open Collector Output
Voltage
(MO, MOX, E, EX)
VOC
-0.5
VCC + 0.5 V
4
Differential Input Voltage
(any differential Input)
VI
-2
2
V
5
Input current (IF, IFX)
IIF
10
mA
6
Junction Temperature
Tj
125
°C
7
Storage Temperature
TS
125
°C
8
Thermal Resistance
(junction to lead)
RthJL
140
K/W
9
ESD Integrity *
VESD
1000
V
-55
-1000
Units Remarks
V
of PD1, PD2
according MILSTD 883D,
method 3015.7
and EOS/ESD
assn. standard
S5.1 - 1993
* The RF pins 3,4,17 and 18 are not protected against voltage stress > 300V (versus VS or GND).
The high frequency performance prohibits the use of adequate protective structures.
Semiconductor Group
13
08.97
PMB 2201
2.2
Operational Range
Within the operational range the IC operates as described in the circuit description.
The AC/DC characteristic limits are not guaranteed.
Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = -30°C...85°C
#
1
Parameter
Symbol
Limit Values
Min
Max
Units
VCC1,VCC2
2.7
4.5
V
2
VCC1, VCC2 Supply
PD-Signals Voltage-L
VPDL
0
0.8
V
3
PD-Signals Voltage-H
VPDH
2.1
VCC
V
DC
2.5
GHz
0
dBm
2.5
GHz
0
dBm
2.5
GHz
Mixer section
4
RF, RFX input frequency
fRF
5
RF, RFX input level
PRF
6
IF, IFX input frequency
fIF
7
IF, IFX input level
PIF
8
MO, MOX output frequency
fMO
9
Minimum resistive load R2, R3 at R2, R3
IF, IFX to GND
in Test
Circuit 1
DC
DC
Ω
33
Modulator section
10
LO, LOX input frequency
fLO
800
1500
MHz
11
LO, LOX input level
PLO
-15
0
dBm
12
A, AX, B, BX input frequency
fA, fB
DC
400
MHz
13
A, AX, B, BX input level
VA, VAX,
VB, VBX
1.4
VCC1−0.6
V
14
A-AX, B-BX differential input
signal level
VA-AX,
VB-BX
1
Vpp
Note: Power levels refer to 50 Ohms impedance
Semiconductor Group
14
08.97
PMB 2201
2.3
AC/DC Characteristics
AC/DC characteristics involve the spread of values guaranteed within the specified
supply voltage and ambient temperature range. Typical characteristics are the median
of the production.
Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25°C
Parameter
#
Symbol
Limit Values
Unit
Test
Conditions
TestCircuit
Min
Typ
Max
13
9
0.3
5
17
12
0.6
7
21
15
1.0
9
mA
mA
mA
mA
PD1 & PD2 = H 1
2
2
2
2
µA
µA
µA
µA
PD1 & PD2 = L 1
1nF at TREF
100pF at ADJ
Modulator
inputs
DC coupled
Supply Current
1
Supply current with all
powered up
IVCC1
IE+IEX
IVCC2
IMO+IMOX*
2
Supply current with all
powered down
IVCC1
IE+IEX
IVCC2
IMO+IMOX
3
Power up settling
time **
tPU
2
µs
Mixer section
Mixer Input
4
Internal DC voltage
at IF/IFX ***
VDCIF
0.30
V
1
5
Internal DC voltage
at RF/RFX
VDCRF
2.0
V
1
* The mixer current decreases when no external resistors to ground are connected at IF and IFX as in the test
circuit 1 from the preliminary data sheet 9.95. In this case the typical value of IMO+IMOX is 1mA.
** tPU is determined by the time needed to charge the external capacitors.
*** Note: There are external resistors (82 Ohms) at IF and IFX to ground.
Semiconductor Group
15
08.97
PMB 2201
AC/DC Characteristics
AC/DC characteristics involve the spread of values guaranteed within the specified
supply voltage and ambient temperature range. Typical characteristics are the median
of the production.
Supply voltage VVCC = 2.7V to 4.5V, Ambient temperature Tamb = +25°
Parameter
#
Symbol
Limit Values
Min
Typ
Unit
Max
Test
Conditions
TestCircuit
Mixer Output MO/MOX:
*
6
Power gain*
G
7
Output power**
PMO
8
1dB compression
point*
PIF1dB
9
Noise figure*
NIF
10
Carrier
suppression**
aC
3
-12
25
dB
Application
Circuit
dBm
PRFIN = -5dBm 1
fRF IN = 1.4 GHz
PIFIN = -5dBm
fIF IN = 400 MHz
-7
dBm
PRFIN > -4dBm
8
dB
DSB Noise,
f=1GHz
39
dB
PRFIN = -5dBm 1
fRF IN = 1.4 GHz
PIFIN = -5dBm
fIF IN = 400 MHz
-9
-6
Application
Circuit
Design hint
** These values changed compared to the preliminary data sheet 9.95 due to changes in the test circuit 1. The
internal circuit of the mixer is the same.
Semiconductor Group
16
08.97
PMB 2201
AC/DC Characteristics
AC/DC characteristics involve the spread of values guaranteed within the specified
supply voltage and ambient temperature range. Typical characteristics are the median
of the production.
Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25°C
#
Parameter
Symbol
Limit Values
min.
typ.
Unit Test Condition
max.
Test
Circuit
Modulator section
Modulator LO Input at LO, LOX
11
Internal DC voltage
at LO, LOX
V
VCC1
- 0.7V
VDCLO
1
Modulator Inputs A/AX and B/BX
12
Input DC current at
A, AX, B, BX
IA, IAX,
IB, IBX
5
13
Differential input
offset current
IOSA,
IOSB
-1
14
Differential input
resistance*
RA/AX,
RB/BX
125
15
Differential input
capacitance*
CA/AX,
CB/BX
10
µA
1
µA
Differential input
voltage = 0V
1
1
250
kΩ
fA,B = 100 kHz
1
pF
fA,B = 100 kHz
DC bias TREF for A/AX and B/BX inputs
16
Reference voltage
for A, B modulating
inputs
VTREF
1.65
17
Minimum decoupling capacitance at
TREF*
CTREF
1
18
Maximum load
current at TREF*
ILMAX
1.75
1.85
V
1
nF
1.0
mA
* Design hint
Semiconductor Group
17
08.97
PMB 2201
AC/DC Characteristics
AC/DC characteristics involve the spread of values guaranteed within the specified
supply voltage and ambient temperature range. Typical characteristics are the median
of the production.
Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25°C
#
Parameter
Symbol
Limit Values
min.
typ.
Unit
max.
Test
Condition
Test
Circuit
Phase adjust input ADJ
19
Open circuit voltage
VADJ
880
mV
20
Input impedance
RADJ
20
kΩ
1
Modulator output E/EX: fA,B=10MHz; VA,B=1VPP; 90° phase shift; PLO=-10dBm
*
21
Output power
PE/EX
22
Output power for
power matching *
PE/EX
23
Carrier suppression ** aC
24
Single sideband
suppression ***
25
26
-6
-2
2
dBm
1
3
dBm
fLO = 1429MHz
Appl.
circuit
32
30
47
40
dB
dB
fLO = 800MHz
fLO = 1500MHz
1
assb
35
44
dB
Suppression of third
order distortion products ****
aIM3
28
35
32
43
dB
dB
fLO = 800 MHz
fLO = 1500 MHz
Output noise floor *
PN
-140
dBc
/Hz
fLO = 915MHzfmeas = 935MHz
1
1
Application hint
** The carrier suppression can be optimized for a particular application using offset voltages at the baseband
inputs A/AX and B/BX. The optimum values can be found iteratively by adjusting the A/AX and B/BX offsets
alternately until the carrier disappears into the noise floor. If the actual offset voltages differ from their optimum
values by ∆VOSA and ∆VOSB, the carrier suppression in dB is given by
Vm
a c = 20 ⋅ log 10 ------------------------------------------------------------2
2
( ∆V OSA ) + ( ∆V OSB )
where Vm is the peak value of the signal voltage at A/AX and B/BX.
*** Phase adjust pin ADJ not used.
**** aIM3 can be increased by reducing the amplitude of the modulator inputs VA-AX and VB-BX.
Semiconductor Group
18
08.97
PMB 2201
2.4
S-Parameters and Input/Output Impedances
The S-parameters provided in this section are based on measurements at the supply
voltage of VCC = 3.6V. Via the internal bias tees of the NWA the capacitive coupling is
done and the open collector pins are connected to VCC.
The S-parameters have to be considered as application hints.
Test
Frequency
[MHz]
Port 1
Port 2
Output
levels
RF-Input impedance
25 - 2500
RF
RFX
-5 dBm
IF-Input impedance
25 - 2500
IF
IFX
-30 dBm
MO-Output impedance
25 - 2500
MO
MOX
-30 dBm
LO-Input impedance
800 - 1500
LO
LOX
-5 dBm
E-Output impedances
800 - 1500
E
EX
-30 dBm
The input/output impedances are calculated from these parameters. The impedances
are given as equivalent circuit with lumped elements for differential and single ended in/outputs.
As equivalent circuit for these in-/outputs a resistor Rp parallel to a capacitance Cp is
derived:
Rpd
Rps
Cpd
Cps
single
ended
differential
The IF-Input impedance is given as a equivalent circuit of a resistor Rs serial to a
inductivity Ls.
Rsd
Rss
Lsd
Lss
single
ended
differential
Semiconductor Group
19
08.97
PMB 2201
2.4.1
Mixer Input RF/RFX
Circuit for measurement:
DC
Supply
82Ω
10p
VCC2
PD2
MO
IF
50Ω
1 nF
DUT
IFX
10p
82Ω
1 nF
MOX
RF
50Ω
RFX
P2
NWA
P1
Mixer Input RF/RFX S-Parameters:
f
MHz
25
250
500
750
1000
1250
1500
1750
2000
2250
2500
S11
MAG
0.953
0.942
0.922
0.902
0.872
0.836
0.787
0.738
0.688
0.635
0.567
Semiconductor Group
ANG
-0.7
-7.5
-15.2
-23.3
-32.5
-41.5
-50.1
-58.0
-66.0
-77.1
-92.0
S21
MAG
0.025
0.032
0.060
0.091
0.123
0.145
0.171
0.196
0.233
0.261
0.276
ANG
8.6
47.1
62.1
59.0
50.7
44.6
37.5
31.1
22.5
12.1
1.1
20
S12
MAG
0.025
0.029
0.055
0.085
0.119
0.144
0.177
0.207
0.253
0.290
0.321
ANG
8.8
43.7
65.0
64.2
57.0
52.4
46.5
40.5
30.9
20.4
9.7
S22
MAG
0.953
0.942
0.926
0.910
0.887
0.867
0.840
0.808
0.769
0.715
0.636
ANG
-0.7
-7.8
-15.6
-23.7
-32.7
-41.4
-50.5
-59.7
-69.6
-82.5
-98.7
08.97
PMB 2201
Mixer Input RF/RFX Impedances:
3
1.3
Rpd
Rps
1.2
2.5
1
C in pF
R in kOhm
1.1
2
1.5
0.9
0.8
1
0.7
0.5
0
0
500
1000
1500
2000
0.5
2500
0
f in MHz
2.4.2
Cpd
Cps
0.6
500
1000
1500
2000
2500
f in MHz
Mixer Input IF/IFX
Circuit for measurement:
DC
Supply
82Ω
Bias Tee
Internal
Bias Tees
VCC2 PD2
P1
IF
NWA
50Ω
MO
DUT
MOX
IFX
P2
RF
50Ω
RFX
1nF
1nF
Bias Tee
82Ω
50Ω
Semiconductor Group
21
08.97
PMB 2201
Mixer Input IF/IFX S-Parameters:
f
MHz
25
250
500
750
1000
1250
1500
1750
2000
2250
2500
S11
MAG
0.445
0.314
0.280
0.285
0.303
0.327
0.361
0.401
0.446
0.501
0.549
ANG
174.3
150.0
144.9
139.6
134.4
128.8
122.6
115.0
106.6
98.0
88.2
S21
MAG
0.248
0.408
0.426
0.417
0.397
0.372
0.347
0.322
0.296
0.275
0.287
ANG
7.5
8.7
-2.3
-9.1
-14.7
-18.7
-21.6
-23.9
-24.8
-22.3
-19.1
S12
MAG
0.247
0.410
0.428
0.420
0.402
0.378
0.353
0.329
0.307
0.292
0.305
S22
MAG
0.444
0.314
0.279
0.287
0.308
0.335
0.358
0.383
0.417
0.461
0.501
ANG
7.9
9.3
-1.8
-8.6
-13.9
-18.4
-21.1
-23.0
-23.8
-22.3
-21.8
ANG
174.3
149.9
145.3
141.1
136.7
131.0
123.9
116.1
107.5
97.4
85.3
Mixer Input IF/IFX Impedances:
28
6.5
26
6
5.5
L in nH
24
R in Ohm
Lsd
Lss
22
20
4
Rsd
Rss
18
5
4.5
3.5
16
3
14
2.5
0
500
1000
1500
2000
2500
Semiconductor Group
0
500
1000
1500
2000
2500
f in MHz
f in MHz
22
08.97
PMB 2201
2.4.3
Mixer Output MO/MOX
Circuit for measurement:
82Ω
Bias Tee
50Ω
Internal
Bias Tees
VCC2 PD2
IF
P1
DUT
RF
Bias Tee
NWA
MOX
IFX
50Ω
MO
P2
RFX
1nF
1nF
82Ω
Power
Supply
3.6V
50Ω
Mixer Output MO/MOX S-Parameters:
f
MHz
25
250
500
750
1000
1250
1500
1750
2000
2250
2500
S11
MAG
0.995
0.987
0.975
0.957
0.935
0.911
0.890
0.871
0.847
0.814
0.775
Semiconductor Group
ANG
-0.7
-6.7
-13.4
-20.4
-27.3
-34.2
-40.8
-47.3
-54.1
-61.7
-71.6
S21
MAG
0.005
0.013
0.040
0.062
0.080
0.095
0.108
0.106
0.099
0.097
0.115
ANG
2.4
115.8
100.7
89.2
82.4
78.4
72.5
68.2
73.2
85.2
106.5
23
S12
MAG
0.005
0.013
0.040
0.063
0.080
0.096
0.113
0.115
0.108
0.110
0.125
ANG
-2.7
119.2
103.1
91.0
84.4
81.4
75.8
70.2
74.1
82.9
97.0
S22
MAG
0.997
0.984
0.970
0.952
0.931
0.895
0.870
0.857
0.834
0.797
0.751
ANG
-0.7
-7.5
-14.8
-23.0
-31.8
-40.7
-48.7
-56.6
-65.1
-73.8
-84.2
08.97
PMB 2201
Mixer Output MO/MOX Impedances:
30
Rpd
Rps
20
C in pF
R in kOhm
25
15
10
5
0
0
500
1000
1500
2000
2500
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
Cpd
Cps
0
500
f in MHz
2.4.4
1000
1500
2000
2500
f in MHz
Modulator Input LO/LOX
Circuit for measurement:
DC
Supply
Bias Tee
P1
VCC1 PD1
LO
NWA
50Ω
E
DUT
LOX
50Ω
EX
P2
Bias Tee
Semiconductor Group
24
08.97
PMB 2201
Modulator Input LO/LOX S-Parameters:
f
MHz
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
S11
MAG
0.940
0.934
0.928
0.923
0.919
0.914
0.910
0.905
0.900
0.896
0.893
0.891
0.888
0.886
0.884
ANG
-20.1
-21.4
-22.7
-24.0
-25.2
-26.6
-27.9
-29.1
-30.4
-31.5
-32.7
-33.9
-35.1
-36.4
-37.7
S21
MAG
0.041
0.043
0.047
0.051
0.055
0.058
0.061
0.065
0.069
0.073
0.076
0.078
0.079
0.079
0.078
S12
MAG
0.041
0.043
0.047
0.051
0.055
0.058
0.061
0.064
0.069
0.073
0.076
0.078
0.079
0.079
0.078
ANG
63.8
67.5
70.2
71.6
71.9
72.0
72.4
72.6
72.4
71.3
69.4
67.3
65.2
63.6
62.3
S22
MAG
0.937
0.931
0.925
0.919
0.914
0.909
0.904
0.898
0.893
0.889
0.887
0.885
0.883
0.881
0.878
ANG
63.8
67.5
70.3
71.5
71.9
72.0
72.4
72.7
72.4
71.4
69.5
67.4
65.3
63.6
62.3
ANG
-17.3
-18.5
-19.6
-20.7
-21.9
-23.1
-24.2
-25.3
-26.4
-27.5
-28.5
-29.6
-30.8
-32.0
-33.3
Modulator Input LO/LOX Impedances:
3
0.75
Rpd
Rps
2.75
0.7
2.5
0.65
2
C in pF
R in kOhm
2.25
1.75
1.5
0.55
0.5
1.25
0.45
1
0.4
0.75
0.5
800
Cpd
Cps
0.6
900
1000
1100
1200
1300
1400
1500
900
1000
1100
1200
1300
1400
1500
f in MHz
f in MHz
Semiconductor Group
0.35
800
25
08.97
PMB 2201
2.4.5
Modulator Output E/EX
Circuit for measurement:
VCC1
50Ω
LO
50Ω
P1
E
DUT
LOX
Internal
Bias Tees
PD1
NWA
EX
P2
Power
Supply
3.6V
Modulator Output E/EX S-Parameters:
f
MHz
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
S11
MAG
0.978
0.976
0.975
0.970
0.969
0.965
0.963
0.960
0.953
0.950
0.942
0.935
0.933
0.927
0.920
Semiconductor Group
ANG
-22.7
-24.5
-26.3
-28.0
-29.6
-31.5
-33.4
-35.2
-37.1
-38.9
-40.6
-42.5
-44.1
-45.8
-47.7
S21
MAG
0.095
0.101
0.106
0.107
0.109
0.112
0.114
0.118
0.123
0.124
0.128
0.130
0.132
0.133
0.136
ANG
66.7
64.3
61.6
59.2
58.9
57.1
57.7
56.5
55.7
53.2
52.2
50.1
48.5
47.3
46.0
26
S12
MAG
0.110
0.117
0.124
0.127
0.130
0.135
0.135
0.137
0.136
0.138
0.138
0.139
0.142
0.143
0.145
ANG
68.1
66.6
63.5
61.0
58.4
55.5
52.4
51.0
49.0
47.5
47.0
45.8
44.0
43.4
41.4
S22
MAG
0.975
0.977
0.977
0.976
0.971
0.969
0.966
0.960
0.956
0.953
0.950
0.947
0.945
0.943
0.941
ANG
-22.5
-24.2
-25.7
-27.7
-29.5
-31.4
-33.4
-35.1
-36.7
-38.6
-40.3
-42.2
-44.1
-45.9
-47.8
08.97
PMB 2201
Modulator Output E/EX Impedances:
0.95
11
Rpd
Rps
10
0.9
9
0.85
0.8
7
C in pF
R in kOhm
8
6
5
0.7
0.65
4
3
0.6
2
0.55
1
800
Cpd
Cps
0.75
900
1000
1100
1200
1300
1400
1500
Semiconductor Group
0.5
800
900
1000
1100
1200
1300
1400
1500
f in MHz
f in MHz
27
08.97
PMB 2201
2.5
Circuits
2.5.1
Test Circuit 1
27Ω
R1
RFIN
TR4
C7
1nF
RF
RFX
C20
1nF
27Ω
C8
1nF
R4
VCC2
GND2
VCC2
82Ω
R3
C9
1nF
MOX
IF
C21
1nF
TR5
IFIN
TR1
C10
1nF
MOUT
MO
IFX
82Ω
C22
1nF
R2
PD2
GND2
100Ω
R8
LOIN
C1
1nF
ADJ
GND1
C13
1nF
LOX
E
PD2
C23
1nF
C24
1nF
EOUT
TR6
TR2
C14
1nF
100Ω
C25
1nF
EX
LO
R7
PD1
A
AIN
GND1
TREF
C28
4.7nF
C18
4.7nF
TR3
R11
2.2kΩ
AX
R12
VCC1
C26
1nF
C16
1nF
2.2kΩ
VCC1
PD1
C15
1nF
C19
4.7nF
Semiconductor Group
R6
220Ω
C17
4.7nF
A
B
AX
BX
28
R5
220Ω
C27
4.7nF
2.2kΩ
TR7
B
R9
2.2kΩ
BIN
BX
C29
4.7nF
R10
08.97
PMB 2201
2.5.2
Application Circuit
Semiconductor Group
29
08.97
PMB 2201
The application circuit is designed for the following frequencies:
Mixer section:
fIF-IN :
178 MHz
fLO-IN :
1607 MHz - 1631 MHz
fMIX-OUT :
1429 MHz - 1453 MHz
Modulator section:
fMOD-IN =
1429MHz - 1453MHz
fMOD-OUT = 1429MHz - 1453MHz
Semiconductor Group
30
08.97
PMB 2201
3
Package Outlines
P-TSSOP-24
(Plastic Package)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Semiconductor Group
31
Dimensions in mm
08.97